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| Number | Title | Issue Date |
| 7420163 | Determining layer thickness using photoelectron spectroscopy According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron s... | 09/02/2008 |
| 7362088 | Non contact method and apparatus for measurement of sheet resistance of P-N junctions A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting ele... | 04/22/2008 |
| 7321672 | Image reading apparatus and image reading system equipped with the image reading apparatus An image reading system comprising a display panel with an image display area formed by a plurality of display pixels which emits display light and displays an image in a viewing field side corresponding to a display signal from the image display area; a transparent... | 01/22/2008 |
| 7312625 | Test circuit and method of use thereof for the manufacture of integrated circuits A test circuit for fabrication of transistors for Very Large Scale Integration (“VLSI”) processing and method of use thereof are described. Transistors are formed in an array. A first decoder is coupled to gates of the transistors and configured to selectively p... | 12/25/2007 |
| 7247877 | Integrated carbon nanotube sensors A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is a... | 07/24/2007 |
| 7195936 | Thin film processing method and system In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation ... | 03/27/2007 |
| 7192789 | Method for monitoring an ion implanter A method for monitoring an ion implanter is disclosed. In one embodiment, the method comprises providing a wafer, forming a barrier layer on the surface of the wafer wherein the barrier layer has a substantial blocking effect on ion implantation, performing an ion i... | 03/20/2007 |
| 7183759 | Optical probes with spacing sensors for the wafer level testing of optical and optoelectronic chips This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light to/from the top of the wafer. During the optical testing, the vertical spacing between an optical probe and the wafer is s... | 02/27/2007 |
| 7094978 | System and method for generating a high speed estimated position output for a position encoder A system and method for generating an approximated position signal that is updated and output at a rate higher than a base rate of actual position signals measured using a position transducer. The actual position signals are determined and/or stored by a transducer ... | 08/22/2006 |
| 7049834 | Semiconductor device test method and semiconductor device tester A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation ... | 05/23/2006 |
| 7019513 | Non-contact method and apparatus for measurement of sheet resistance and leakage current of p-n junctions A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of a surface p-n junction and its leakage current is disclosed. The apparatus comprises an alternating light source optically coupled with a transparent and conducting... | 03/28/2006 |
| 7015865 | Media with controllable refractive properties An apparatus includes a 3D array of circuit elements and control lines for coupling a remote control device to the circuit elements in the array. Each circuit element is configured to transform from one circuit state to another circuit state in response to a change ... | 03/21/2006 |
| 7002361 | Film thickness measuring apparatus and a method for measuring a thickness of a film An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when ... | 02/21/2006 |
| 6994750 | Film evaluating method, temperature measuring method, and semiconductor device manufacturing method Reference infrared-absorption spectrum patterns are prepared in advance as a database. The infrared-absorption spectrum pattern of a film targeted for measurement is measured using FT-IR spectroscopy. Subsequently, multivariate analysis is performed using PLS regres... | 02/07/2006 |
| 6909302 | Real-time in-line testing of semiconductor wafers An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assem... | 06/21/2005 |
| 6850079 | Film thickness measuring apparatus and a method for measuring a thickness of a film An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when ... | 02/01/2005 |
| 6777960 | Method of inferring the existence of light by means of a measurement of the electrical characteristics of a nanotube bound with a dye, and detection arrangement A method of inferring the existence of light by means of a measurement of the electrical characteristics of a nanotube bound to a dye first of all involves bringing a nanotube derivatized with a dye into contact with two conductor tracks. An electrical parameter of ... | 08/17/2004 |
| 6750662 | Apparatus for localizing production errors in a photovoltaic element Apparatus for localizing production errors in a photovoltaic element which is formed substantially by a semiconductor substrate in the form of a wafer, on opposite main surfaces of which are arranged electrical conductors for transporting electrical charge carriers.... | 06/15/2004 |
| 6650127 | Apparatus for measuring conductivity An apparatus for measuring electric conductivity having three electrodes brought into contact with a substance to be measured. The electrodes include a detection electrode for detecting electric conductivity of the substance to be measured, and two AC cur... | 11/18/2003 |
| 6603320 | Electric conductometer, electrode for measuring electric conductivity, and method for producing the same An electric conductometer comprising at least two electric conductivity measuring electrodes each body of which is made from a conductive metal and each surface of which is formed by a titanium oxide layer as an electrode surface, a space for storing a su... | 08/05/2003 |
| 6515492 | Particle detector system A combined impedance and fluorescence particle detecting system comprising a divider separating a first and a second chamber, the divider having a small orifice enabling flow of liquid sample between the chambers, and technique for determining an impedanc... | 02/04/2003 |
| 6034535 | Method utilizing a modulated light beam for determining characteristics such as the doping concentration profile of a specimen of semiconductor material A method for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced from the other electrode by a... | 03/07/2000 |
| 5508625 | Voltage stand off characteristics of photoconductor devices The invention provides a way to improve the voltage stand-off characteristics of photoconductors, including both surface and bulk photoconductors. In a preferred embodiment, the invention comprises a photoconductor device having a semiconductor substrate ... | 04/16/1996 |
| 5442297 | Contactless sheet resistance measurement method and apparatus A contactless sheet resistance measurement apparatus and a method for measuring the sheet resistance of a desired layer of a first conductivity type, formed upon a substrate of an opposite conductivity type, is disclosed. The apparatus comprises a junctio... | 08/15/1995 |
| 5309108 | Method of inspecting thin film transistor liquid crystal substrate and apparatus therefor The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respe... | 05/03/1994 |
| 5211480 | TRD temperature sensor and electronics A temperature sensing system has a signal means which provides a signal representative of a temperature responsive luminescence, where the luminescence has a characteristic time-rate-of-decay. A means for comparison is connected to the signal means and sa... | 05/18/1993 |
| 4816755 | Method and apparatus for measuring photoresistivity and photo hall-effect of semiconductor wafers A method and apparatus for measuring the characteristics of a photoconductive semiconductor wafer. The apparatus comprises a light source for directing light of substantially uniform intensity toward one surface of the wafer. The apparatus further compris... | 03/28/1989 |
| 4594542 | Solid state, high-low resistance monitor A resistance monitoring solid state circuit distinguishes between a minimum high resistance condition and a maximum low resistance condition by current mode switching of a pair of transistors the switching control voltages of which are established by bias... | 06/10/1986 |
| 4581576 | Nondestructive method for profiling imperfection levels in high resistivity semiconductor wafers A method is disclosed for nondestructively profiling the uniformity of imperfection level densities in a semiconductor wafer. Resistance profiles from the wafer are obtained using an opaque spot filter and an optical filter. The difference between the res... | 04/08/1986 |
| 4412174 | Monitoring of corrosion A method of and apparatus for the detection of pitting corrosion, in which simultaneous measurements of the rate of loss of material from a body under test are made by means of changes in the resistance of the body and thin layer activation analysis. If t... | 10/25/1983 |
| 4412173 | Apparatus using leakage current for measuring resistivity Apparatus using leakage current through a sample to determine resistivity. An optically active material of the type which changes the polarization of a light beam passing therethrough, responsive to an electric field, is placed between a first pair of con... | 10/25/1983 |
| 4307338 | Laser alignment detector A detector for application to integrated circuits useful in determining the alignment of a trimming laser. A metallization pattern is employed along with electrical detection circuitry to determine when the trimming laser becomes misaligned by a predeterm... | 12/22/1981 |
| 4148586 | Apparatus for galvanic detection of optical absorptions An apparatus and method for utilizing the opto-galvanic effect to perform spectroscopic or analytic investigations of atomic or molecular species. A sample of the substance to be analyzed is vaporized in an analytical flame, gas discharge tube, high tempe... | 04/10/1979 |
| 4144488 | Investigation of near-surface electronic properties in semiconductors by electron beam scanning An electron-beam scanning system for investigating the nonuniformity of (1) he work function, (2) the position of the conduction-band edge with respect to the Fermi level, and (3) the electron affinity at the surface of a single-crystal semiconductor. A sm... | 03/13/1979 |
| 4142145 | Method for determining conduction-band edge and electron affinity in semiconductors A method which utilizes low-energy electron reflections to determine the ctron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very... | 02/27/1979 |
| 4012691 | Determination of thermal impedances of bonding layers in infrared photoconductors A method of determining thermal constants of bonding layers of an infrared ensor which comprises cooling a bonded layer sensor to 77°K and then heating the sensor by a quick pulse of heat. The electrical resistance of the sensor is measured and the measur... | 03/15/1977 |
| 3988669 | Automatic control and detector for three-terminal resistance measurement A device is provided for automatic control and detection in a three-terminal resistance measuring instrument. The invention is useful for the rapid measurement of the resistivity of various bulk material with a three-terminal electrode system. The device ... | 10/26/1976 |