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| Number | Title | Issue Date |
| 7381967 | Non-axisymmetric charged-particle beam system The charged-particle beam system includes a non-axisymmetric diode forms a non-axisymmetric beam having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non-axisymmetric beam... | 06/03/2008 |
| 7372195 | Electron beam source having an extraction electrode provided with a magnetic disk element An electron beam source for use in an electron gun. The electron beam source includes an emitter terminating in a tip. The emitter is configured to generate an electron beam. The electron beam source further includes a suppressor electrode laterally surrounding the ... | 05/13/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7345436 | Apparatus and method for controlling the beam current of a charged particle beam An apparatus for producing a beam of charged particles is provided, which comprises an emitter (1, 2) and a switching device (3) adapted to switch between first, second and third beam current levels, wherein the beam current at said first current level... | 03/18/2008 |
| 7305935 | Slotted antenna waveguide plasma source A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster appli... | 12/11/2007 |
| 7301160 | Ion sources The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically... | 11/27/2007 |
| 7271399 | Manipulator assembly in ion implanter A manipulator assembly in an ion implanter comprises a ground electrode, a first suppression electrode located on a first side of the ground electrode facing an ion source device for producing ion beams, a second suppression electrode which is located on a second si... | 09/18/2007 |
| 7265367 | Electron beam emitter An exit window for an electron beam emitter through which electrons pass in an electron beam includes a structural foil for metal to metal bonding with the electron beam emitter. The structural foil has a central opening formed therethrough. A window layer of high t... | 09/04/2007 |
| 7247218 | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for comp... | 07/24/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
| 7196337 | Particle processing apparatus and methods This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing c... | 03/27/2007 |
| 7186943 | MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for su... | 03/06/2007 |
| 7148613 | Source for energetic electrons There is described, for example, a generally cylindrical generator of energetic electrons that releases electrons from a vacuum enclosure into a surrounding space including into the atmosphere where the electrons may be used for a variety of applications including c... | 12/12/2006 |
| 7145157 | Kinematic ion implanter electrode mounting A kinematic electrode mount is provided for an ion implanter in which an electrode insert member having an electrode body portion which defines an aperture, is inserted into an electrode support frame. In one embodiment, a first kinematic alignment pin of the insert... | 12/05/2006 |
| 7141757 | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent A plasma reactor operable over a very wide process window of pressure, source power and bias power includes a resonant circuit consisting of an overhead electrode having a first impedance, a wafer support pedestal having a second impedance and a bulk plasma having a... | 11/28/2006 |
| 7122966 | Ion source apparatus and method The invention relates to a method and apparatus that can improve the lifetime and performance of an ion source in a cyclotron. According to one embodiment, the invention comprises an ion source tube for sustaining a plasma discharge therein. The ion source tube comp... | 10/17/2006 |
| 7064491 | Ion implantation system and control method Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are mainta... | 06/20/2006 |
| 7045792 | Charged particle buncher A charged particle buncher with a series of spaced apart electrodes 1 arranged to generate a shaped electric field, the series comprising a first electrode 1a, a last electrode 1b and one or more intermediate electrodes, wherein th... | 05/16/2006 |
| 7045793 | Multi-grid ion beam source for generating a highly collimated ion beam A multi-grid ion beam source has an extraction grid, an acceleration grid, a focus grid, and a shield grid to produce a highly collimated ion beam. A five grid ion beam source is also disclosed having two shield grids. The extraction grid has a high positive potenti... | 05/16/2006 |
| 7042145 | Electron beam projector provided with a linear thermionic emitting cathode for electron beam heating An electron beam gun comprises a beam waveguide and an accelerating anode fixed thereto. The accelerating anode is connected with the aid of high-voltage insulators and through a cathode plate to a cathode assembly. The cathode assembly comprises a linear hot cathod... | 05/09/2006 |
| 7038403 | Method and apparatus for maintaining alignment of a cyclotron dee A technique is provided for the alignment of an H/D puller for use in a cyclotron. One aspect of the technique comprises magnetically attaching a pair of feeler gages to an alignment tool for use in aligning the H/D puller. The magnetic retention of the feeler gages... | 05/02/2006 |
| 7034285 | Beam source and beam processing apparatus A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10 | 04/25/2006 |
| 7030335 | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a... | 04/18/2006 |
| 7005651 | Liquid metal ion gun An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source... | 02/28/2006 |
| 6977383 | Method and apparatus for generating a membrane target for laser produced plasma A method and apparatus for generating membrane targets for a laser induced plasma is disclosed herein. Membranes are advantageous targets for laser induced plasma because they are very thin and can be readily illuminated by high-power coherent light, such as a laser... | 12/20/2005 |
| 6974950 | Positive and negative ion beam merging system for neutral beam production The positive and negative ion beam merging system extracts positive and negative ions of the same species and of the same energy from two separate ion sources. The positive and negative ions from both sources pass through a bending magnetic field region between the ... | 12/13/2005 |
| 6964396 | Automatic accel voltage tracking system for an ion thruster A voltage tracking system for an ion thruster includes a discharge chamber, a screen grid, an accelerator grid, and an accelerator grid voltage controller. The discharge chamber contains plasma at a given potential. The screen grid is adjacent to the discharge chamb... | 11/15/2005 |
| 6914386 | Source of liquid metal ions and a method for controlling the source The invention provides a system and method for controlling a source of liquid metal ions, the source comprises a tip a first electrode and a second electrode, the method includes the steps of: (i) maintaining the first electrode at a first voltage level range and ma... | 07/05/2005 |
| 6914240 | Multi-inlet mass spectrometer A mass spectrometer has an ion source (10) with a plurality of atmospheric pressure sample ioniser (20) mounted in a front face (15) thereof. Each sample ioniser (20) extends into a corresponding sample region (30) and the tip of e... | 07/05/2005 |
| 6909087 | Method of processing a surface of a workpiece A plasma generator generates positive ions and negative ions in a plasma. An ion extracting portion (4, 5) selectively extracts the generated positive ions and negative ions from the plasma, and accelerates the extracted ions in a predetermined direction. The... | 06/21/2005 |
| 6909086 | Neutral particle beam processing apparatus A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) ... | 06/21/2005 |
| 6897457 | Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus An ion implanter has an ion source (10) and an ion beam extraction assembly (50) for extracting the ions. The extraction assembly (50) is a tetrode structure and one of the pairs of extraction electrodes (51) has left and right ports (... | 05/24/2005 |
| 6861643 | Neutral particle beam processing apparatus A neutral particle beam processing apparatus comprises a process gas inlet port (11) for introducing a process gas into a vacuum chamber (1), a plasma generating chamber (2) for generating positive ions and electrons from the introduced process ... | 03/01/2005 |
| 6858838 | Neutral particle beam processing apparatus A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (10... | 02/22/2005 |
| 6777882 | Ion beam generator G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concen... | 08/17/2004 |
| 6777862 | Segmented electrode hall thruster with reduced plume An apparatus and method for thrusting plasma, utilizing a Hall thruster with segmented electrodes along the channel, which make the acceleration region as localized as possible. Also disclosed are methods of arranging the electrodes so as to minimize erosion and arc... | 08/17/2004 |
| 6753533 | Electron beam apparatus and method of controlling same An electron beam apparatus is offered which is capable of being used optimally over a wide range of electron beam currents. A method of controlling this apparatus is also offered. The apparatus has an electron emitter for producing an electron beam. The beam is coll... | 06/22/2004 |
| 6744225 | Ion accelerator The present invention mainly relates to an ion accelerator with significantly simplified construction, for accelerating an much larger amount of ions, wherein that a plasma-generating target 12, a vacuum chamber 16 for extracting ions from plasma gener... | 06/01/2004 |
| 6674073 | Scattering target-holding mechanism and an electron spin analyzer A scattering target constituting an electron spin analyzer is supported by a scattering target-holding member made of a conductive material from the outside of the space formed by an accelerating electrode and an electrode supporter. Then, the scattering ... | 01/06/2004 |
| 6661014 | Methods and apparatus for oxygen implantation An oxygen ion containing plasma is generated using a hot filament ion source. The oxygen ions in the plasma come from an oxide source (e.g., a metal oxide) which has a lower free energy of formation than that of the filament metal oxide (e.g., WO3 | 12/09/2003 |
