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| Number | Title | Issue Date |
| 7439562 | Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in... | 10/21/2008 |
| 7439081 | Method for making integrated circuit chip utilizing oriented carbon nanotube conductive layers A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nano... | 10/21/2008 |
| 7432217 | Method of achieving uniform length of carbon nanotubes (CNTS) and method of manufacturing field emission device (FED) using such CNTS In a method of achieving uniform lengths of Carbon NanoTubes (CNTs) and a method of manufacturing a Field Emission Device (FED) using such CNTs, an organic film is coated to cover CNTs formed on a predetermined material layer. The organic film is etched to a predete... | 10/07/2008 |
| 7417320 | Substrate structure and manufacturing method of the same A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C... | 08/26/2008 |
| 7413924 | Plasma etch process for defining catalyst pads on nanoemissive displays A process for forming a catalyst layer for carbon nanotube growth comprising forming a catalyst layer having a first and second portion over one of a cathode metal layer or a ballast resistor layer; patterning a photoresist over the first portion; etching the second... | 08/19/2008 |
| 7399691 | Methods of forming nanoscopic wire-based devices and arrays Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surf... | 07/15/2008 |
| 7390947 | Forming field effect transistors from conductors A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least t... | 06/24/2008 |
| 7381983 | N-type carbon nanotube field effect transistor and method of fabricating the same Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and ... | 06/03/2008 |
| 7371696 | Carbon nanotube structure and method of vertically aligning carbon nanotubes A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the po... | 05/13/2008 |
| 7371674 | Nanostructure-based package interconnect An embodiment of the present invention is an interconnect technique. A nanostructure bump is formed on a die. The nanostructure bump has a template defining nano-sized openings and metallic nano-wires extending from the nano-sized openings. The die is attached to a ... | 05/13/2008 |
| 7352607 | Non-volatile switching and memory devices using vertical nanotubes Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Methods of sensing the state of the devices include measuring capacitance, and tunnel... | 04/01/2008 |
| 7348675 | Microcircuit fabrication and interconnection Embodiments of methods in accordance with the present invention provide three-dimensional carbon nanotube (CNT) integrated circuits comprising layers of arrays of CNT's separated by dielectric layers with conductive traces formed within the dielectric layers to elec... | 03/25/2008 |
| 7335603 | System and method for fabricating logic devices comprising carbon nanotube transistors Carbon nanotube devices and methods for fabricating these devices, wherein in one embodiment, the fabrication process consists of the following process steps: (1) generation of a template, (2) catalyst deposition, and (3) nanotube synthesis within the template. In a... | 02/26/2008 |
| 7335528 | Methods of nanotube films and articles Nanotube films and articles and methods of making the same. A conductive article includes an aggregate of nanotube segments which contact other nanotube segments to define a plurality of conductive pathways along the article. Segments may have different lengths and ... | 02/26/2008 |
| 7329902 | IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs... | 02/12/2008 |
| 7323730 | Optically-configurable nanotube or nanowire semiconductor device The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region th... | 01/29/2008 |
| 7316982 | Controlling carbon nanotubes using optical traps An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam. ... | 01/08/2008 |
| 7294877 | Nanotube-on-gate FET structures and applications Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region o... | 11/13/2007 |
| 7288490 | Increased alignment in carbon nanotube growth Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a substrate surface. A single electrode, having an associated voltage s... | 10/30/2007 |
| 7273732 | Systems and methods for nanowire growth and harvesting The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In... | 09/25/2007 |
| 7268077 | Carbon nanotube reinforced metallic layer A method and apparatus including an interconnect structure having a surface, a plurality of nanotubes disposed adjacent to the surface, and a metallic layer disposed adjacent to the surface and substantially including the nanotubes. An assembly may include a first e... | 09/11/2007 |
| 7262501 | Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational c... | 08/28/2007 |
| 7262991 | Nanotube- and nanocrystal-based non-volatile memory An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage ... | 08/28/2007 |
| 7253434 | Suspended carbon nanotube field effect transistor The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and dra... | 08/07/2007 |
| 7233071 | Low-k dielectric layer based upon carbon nanostructures A low-k dielectric material for use in the manufacture of semiconductor devices, semiconductor structures using the low-k dielectric material, and methods of forming such dielectric materials and fabricating such structures. The low-k dielectric material comprises c... | 06/19/2007 |
| 7229847 | Forming electrical contacts to a molecular layer The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp wi... | 06/12/2007 |
| 7223811 | Nanocomposite: products, process for obtaining them and uses thereof The present invention is related to nanocomposites comprising polymers, carbon nanotubes and layered silicate nanoparticles. The present invention also concerns methods for obtaining said nanocomposites as well as their uses. ... | 05/29/2007 |
| 7224039 | Polymer nanocomposite structures for integrated circuits In accordance with certain embodiments consistent with the present invention, diamond nanoparticles are mixed with polymers. This mixture is expected to provide improved properties in interlayer dielectrics used in integrated circuit applications. This abstract is n... | 05/29/2007 |
| 7215021 | Electronic device The conductor wire surface for constituting a circuit formed by print or junction on a substrate formed from a composite member of ceramics, resin, and an inorganic member and from a resin member is coated with glass, resin, solder, or silver paste, thus the corrosi... | 05/08/2007 |
| 7211854 | Field effect devices having a gate controlled via a nanotube switching element Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a r... | 05/01/2007 |
| 7190049 | Nanocylinder arrays Pathways to rapid and reliable fabrication of nanocylinder arrays are provided. Simple methods are described for the production of well-ordered arrays of nanopores, nanowires, and other materials. This is accomplished by orienting copolymer films and removing a comp... | 03/13/2007 |
| 7183131 | Process for producing a nanoelement arrangement, and nanoelement arrangement A process for producing a nanoelement arrangement and to a nanoelement arrangement. A first nanoelement is at least partially covered with catalyst material for catalyzing the growth of nanoelements. Furthermore, at least one second nanoelement is grown on the catal... | 02/27/2007 |
| 7176099 | Hetero-junction bipolar transistor and manufacturing method thereof A hetero-junction bipolar transistor that satisfies high resistance required to avoid a potential breakdown includes: an n-type sub-collector layer 110 that is made of GaAs; an n-type first collector 121 that is made of a semiconductor material with a ... | 02/13/2007 |
| 7135773 | Integrated circuit chip utilizing carbon nanotube composite interconnection vias Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias ... | 11/14/2006 |
| 7135728 | Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational c... | 11/14/2006 |
| 7132304 | Field emission device, display adopting the same and method of manufacturing the same A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitte... | 11/07/2006 |
| 7129097 | Integrated circuit chip utilizing oriented carbon nanotube conductive layers A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nano... | 10/31/2006 |
| 7126207 | Capacitor with carbon nanotubes In one embodiment, a capacitor comprises a substrate defining a first electrical terminal; a catalyst layer disposed on the substrate; a plurality of carbon nanotubes disposed on the catalyst layer; a dielectric layer disposed over the plurality of carbon nanotubes;... | 10/24/2006 |
| 7115916 | System and method for molecular optical emission A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecti... | 10/03/2006 |
| 7105851 | Nanotubes for integrated circuits One or more semiconducting or conducting regions of a device such as a transistor may comprise molecular materials such as nanotubes or similar materials. Regions of a conductive alignment pattern used to align the nanotubes may be proximate to one or more ends of t... | 09/12/2006 |
