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| Number | Title | Issue Date |
| 7432525 | Transistor and display device including the transistor A transistor includes a first electrode, a second electrode, an organic layer provided between the first and second electrodes, and a third electrode for use to apply an electric field to the organic layer. The organic layer includes a polymer inclusion complex.... | 10/07/2008 |
| 7422933 | Method of manufacturing semiconductor device A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according... | 09/09/2008 |
| 7394097 | Liquid crystal display A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a se... | 07/01/2008 |
| 7381990 | Thin film transistor with multiple gates fabricated using super grain silicon crystallization A thin film transistor with multiple gates is fabricated using a super grain silicon (SGS) crystallization process. The thin film transistor a semiconductor layer formed in a zigzag shape on an insulating substrate, and a gate electrode intersecting with the semicon... | 06/03/2008 |
| 7378303 | Method of fabricating thin film transistor A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer ex... | 05/27/2008 |
| 7351606 | Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer An improved method of forming a semiconducting polymer layer protected by an insulating polymer layer is described. In the method, a material for forming a semiconducting polymer and an insulating polymer are dissolved in a solvent. The blended solution is deposited... | 04/01/2008 |
| 7352004 | Thin film transistor array panel and method for manufacturing the same The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the... | 04/01/2008 |
| 7348593 | Thin film transistor and method of fabricating the same An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, a... | 03/25/2008 |
| 7348655 | Organic electro luminescence device and fabrication method thereof An organic electro luminescence device is provided. A thin film transistor (TFT) is formed within a sub-pixel region defined by a gate line and a data line on a substrate. A passivation layer and a first electrode are sequentially formed on the substrate where the T... | 03/25/2008 |
| 7335917 | Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor Provided is a thin film transistor that may be manufactured using Metal Induced Crystallization (MIC) and method for fabricating the same. Also provided is an active matrix flat panel display using the thin film transistor, which may be created by forming a crystall... | 02/26/2008 |
| 7326956 | Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with ... | 02/05/2008 |
| 7312110 | Methods of fabricating semiconductor devices having thin film transistors Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is provided that extends through the interlayer insulating layer and a mold... | 12/25/2007 |
| 7300830 | Method of fabricating liquid crystal display panel A method of fabricating a liquid crystal display panel includes forming a first conductive layer on a substrate and patterning the first conductive layer using a first resist pattern printed on the first conductive layer to form a gate pattern. A semiconductor layer... | 11/27/2007 |
| 7288818 | Organic thin film transistor with low gate overlap capacitance and flat panel display including the same Provided are an organic thin film transistor, a flat panel display device and methods of manufacturing these. The organic thin film transistor includes: source and drain electrodes and an organic semiconductor layer formed on a surface of a substrate; a gate electro... | 10/30/2007 |
| 7286195 | Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the first insulating layer and co... | 10/23/2007 |
| 7285459 | Flat panel display with high capacitance and method of manufacturing the same A flat panel display device having a high capacitance and a high aperture ratio. A thin film transistor and a capacitor are formed on an insulating substrate. The thin film transistor includes a semiconductor layer, a gate electrode and source and drain electrodes. ... | 10/23/2007 |
| 7282767 | Guardwall structures for ESD protection A semiconductor circuit for protecting an I/O pad against ESD events comprising a pMOS transistor (510) in a first n-well (511) having its source connected to Vdd and the first n-well, and its drain connected to the I/O pad; the transistor has a finger... | 10/16/2007 |
| 7279702 | Electronic device, method, monomer and polymer The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and... | 10/09/2007 |
| 7268366 | Method of fabricating X-ray detecting device A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at different etching rates, with an etching ratio of the second insulating mate... | 09/11/2007 |
| 7265009 | HDP-CVD methodology for forming PMD layer A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by... | 09/04/2007 |
| 7253439 | Substrate for display, method of manufacturing the same and display having the same The invention relates to a substrate for a display, a method of manufacturing the same, and a display having the same and provides a substrate for a display which can be manufactured through simple steps with high reliability, a method of manufacturing the same, and... | 08/07/2007 |
| 7253086 | Recessed drain extensions in transistor device A method of forming an integrated circuit transistor (50). The method provides a first semiconductor region (52) and forms (110) a gate structure (54x) in a fixed position relative to the first semiconductor region. The gate st... | 08/07/2007 |
| 7250629 | Semiconductor device and flat panel display device having the same A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third ... | 07/31/2007 |
| 7250316 | Mask and method of manufacturing liquid crystal display device using the same A method for fabricating a device is disclosed. The method includes providing a substrate; forming a thin film on the substrate; forming a photoresistable layer on the thin film; irradiating light onto the photoresistable layer through a photo mask having a transmis... | 07/31/2007 |
| 7238554 | Simultaneous planar and non-planar thin-film transistor processes A method is provided for concurrently forming MP-TFTs and P-TFTs. Generally, the method comprises: forming a P-TFT having source/drain (S/D) regions, an intervening channel region, and a gate, all in a first horizontal plane; and simultaneously forming a MP-TFT havi... | 07/03/2007 |
| 7235434 | Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zi... | 06/26/2007 |
| 7229847 | Forming electrical contacts to a molecular layer The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp wi... | 06/12/2007 |
| 7229868 | Organic field-effect transistor, method for structuring an OFET and integrated circuit The invention relates to an organic field-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The improved structuring is obtained by introducing, using a doctor blade, the f... | 06/12/2007 |
| 7226818 | High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have b... | 06/05/2007 |
| 7221039 | Thin film transistor (TFT) device structure employing silicon rich silicon oxide passivation layer A thin film transistor device structure and a method for fabricating the thin film transistor device structure each comprise a thin film transistor device formed over a substrate. The thin film transistor device structure also comprises a passivation layer formed of... | 05/22/2007 |
| 7202500 | Thin film transistor array substrate and method of manufacturing the same A thin film transistor array substrate includes a gate pattern on a substrate. The gate pattern includes a gate electrode, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line. A source/drain pattern includes a sourc... | 04/10/2007 |
| 7198977 | N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors ... | 04/03/2007 |
| 7195960 | Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor A thin film transistor has a structure capable of decreasing deterioration in Vgs-Ids characteristics. The thin film transistor has a source region composed of an N-type impurity-diffused region, a drain region, and a gate electrode, and a channel region formed dire... | 03/27/2007 |
| 7193238 | Display device and a method for manufacturing the same An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the d... | 03/20/2007 |
| 7189603 | Thin film transistor substrate and its manufacture A semiconductor layer with a threshold voltage for n-channel is formed and patterned to TFT island areas. A gate insulating film is deposited. The first gate electrode layer is fomed and pattered to form an opening. Phosphorous ions are implanted into a p-channel TF... | 03/13/2007 |
| 7189995 | Organic electroluminescence display device and method for fabricating the same The present invention relates to a thin film transistor for easily displaying gradation of an organic electroluminescence display device and a fabrication method of the thin film transistor, and an organic electroluminescence display device using the thin film trans... | 03/13/2007 |
| 7180093 | Semiconductor device and manufacturing method thereof The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an et... | 02/20/2007 |
| 7176535 | Thin film transistor array gate electrode for liquid crystal display device The present invention discloses a TFT array substrate that is fabricated using a four-mask process and a method of manufacturing that TFT array substrate. The gate line and gate electrode of the array substrate is surrounded by the metallic oxide after finishing a f... | 02/13/2007 |
| 7170093 | Dielectric materials for electronic devices A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as,... | 01/30/2007 |
| 7160754 | P-type OFET with fluorinated channels The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surfac... | 01/09/2007 |
