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| Number | Title | Issue Date |
| 7307275 | Encoding and error suppression for superconducting quantum computers The present invention involves a quantum computing structure, comprising: one or more logical qubits, which is encoded into a plurality of superconducting qubits; and each of the logical qubits comprises at least one operating qubit and at least one ancilla qubit. A... | 12/11/2007 |
| 7304348 | DMOS transistor A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low ‘on’ resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the ... | 12/04/2007 |
| 7145170 | Coupled superconducting charge quantum bit device and controlled-not gate using the same A control quantum bit circuit and a target quantum bit circuit each have a quantum box electrode including a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode ... | 12/05/2006 |
| 6524643 | Method for preparing layered structure including oxide superconductor thin film The invention provides a method for preparing a layered structure comprising a lower thin film composed of an oxide superconductor and an upper thin film composed of a material different from the oxide superconductor on a substrate. The lower thin film is... | 02/25/2003 |
| 6020596 | Superconducting device including an isolation layer A FET type superconducting device comprises a substrate having a principal surface, a thin superconducting channel formed of an oxide superconductor layer over the principal surface of the substrate, a superconducting source region and a superconducting d... | 02/01/2000 |
| 5872368 | Method of controlling a super conductor The order parameter of a superconductor is reduced by injecting spin-polarized carriers into the superconductor. The reduction in the order parameter is used to modulate the critical current of the superconductor. In a typical embodiment, a current is cau... | 02/16/1999 |
| 5861361 | Superconducting field effect device having a superconducting channel and method for manufacturing the same A FET type superconducting device comprises a thin superconducting channel, a superconducting source region and a superconducting drain region formed of an oxide superconductor over a principal surface of the substrate, and a gate electrode on a gate insu... | 01/19/1999 |
| 5854493 | Superconduting device having an extremely short superconducting channel formed of oxide superconductor material and method for manufacturing the same A superconducting device has a substrate, and a superconducting channel provided by an oxide superconductor thin film formed to have an angle with respect to a deposition surface of the substrate. A superconductor source electrode region and a superconduc... | 12/29/1998 |
| 5851843 | Method of manufacturing a super conduction field effect transistor A method of manufacturing super conduction field effect transistor having a bi-crystal boundary junction is disclosed. According to the present invention, it is constituted such that on a SrTiO3 bi-crystal substrate, a bi-crystal super conducti... | 12/22/1998 |
| 5840204 | Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO2 layer on the oxide superconductor thin film, patterning the SiO2 layer so as to form the same pattern as that of the oxide superconductor ... | 11/24/1998 |
| 5828079 | Field-effect type superconducting device including bi-base oxide compound containing copper A field-effect type superconducting device includes a channel layer. The channel layer includes Bi-based oxide compound containing Cu. A source electrode contacts the channel layer. A drain electrode contacts the channel layer. A gate insulating film made... | 10/27/1998 |
| 5817531 | Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same A superconducting device comprises a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of an oxide superconductor formed on the principal surface, which can compensates the lattice mismatch ... | 10/06/1998 |
| 5804835 | Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein ... | 09/08/1998 |
| 5789346 | Method for manufacturing an oxide superconductor device Method for manufacturing a superconducting device including forming on a surface of a substrate a non-superconducting oxide layer, a first oxide superconductor thin film, etching the first oxide superconductor thin film so as to form a concave portion, im... | 08/04/1998 |
| 5773843 | Metal electrode for superconducting current path formed of oxide superconductor material and superconducting device utilizing thereof A metal electrode disposed on a surface of an oxide superconductor and forming electric contact with the oxide superconductor wherein at least a portion of the metal electrode is in contact with a side surface of the oxide superconductor which is perpendi... | 06/30/1998 |
| 5770470 | High temperature superconducting electric field effect device and a method for fabricating the same The invention relates to a high temperature superconducting electric field effect device which creates a dual grain boundary on a superconducting thin film and employs it as a channel. The device comprises a substrate, a bottom layer formed on a predeterm... | 06/23/1998 |
| 5739084 | Method for manufacturing a superconducting device having a reduced thickness of oxide superconducting layer A method for fabricating a superconducting device with a substrate, a first oxide superconductor thin film, a barrier layer, a diffusion layer, and a second oxide superconductor thin film. The first oxide superconductor thin film with a very thin thicknes... | 04/14/1998 |
| 5721197 | Controllable superconductor component A microelectronic thin-film device having a thin superconducting layer in contact with a thin quasi-insulating conversion layer. The critical current of the superconducting layer is controlled by application of a voltage to the conversion layer by means o... | 02/24/1998 |
| 5717222 | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same A superconducting device includes a substrate, a projecting insulating region formed in a principal surface of the substrate, and a first thin film portion of an oxide superconductor formed on the projecting insulating region. Second and third thin film p... | 02/10/1998 |
| 5714767 | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby For manufacturing a superconducting device, a compound layer which is composed of the same constituent elements of an oxide superconductor is formed on a surface of the substrate, and a gate electrode is formed on a portion of the compound layer. Portions... | 02/03/1998 |
| 5683968 | Method for manufacturing a superconducting device A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (2... | 11/04/1997 |
| 5663081 | Method for making a high-temperature superconducting field-effect transistor with thick superconducting channel layer Disclosed is a method for making a high-temperature super-conducting field-effect transistor with a thick super-conducting channel, the method comprising the steps of depositing a template layer on an oxide crystal substrate by using a pulse laser deposit... | 09/02/1997 |
| 5637555 | Method for manufacturing a three-terminal superconducting device having an extremely short superconducting channel A method for manufacturing a three-terminal superconducting device is disclosed. A superconducting channel constituted in an oxide superconductor thin film is deposited on a deposition surface of a substrate. A gate electrode for the device is formed thro... | 06/10/1997 |
| 5621223 | Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting region of an extremel... | 04/15/1997 |
| 5596206 | Superconducting device A new type of superconducting device is disclosed. The device embodies a superconducting ceramic film as an active part. A control electrode is provided on the superconducting film in which a passing current is controlled by applying a voltage on an inter... | 01/21/1997 |
| 5594257 | Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same A superconducting device comprises a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of an oxide superconductor formed on the principal surface, which can compensates the lattice mismatch ... | 01/14/1997 |
| 5552374 | Oxide superconducting a transistor in crank-shaped configuration A superconducting device comprises a thin superconducting channel formed of an oxide superconductor, a superconducting source region and a superconducting drain region formed of an oxide superconductor at the both ends of the superconducting channel which... | 09/03/1996 |
| 5539215 | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of c-axis oriented ox... | 07/23/1996 |
| 5528052 | Superconductive-channel electric field-effect drive Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer... | 06/18/1996 |
| 5514877 | Superconducting device and a method for manufacturing the same A superconducting device or a super-FET has a pair of superconducting electrode regions (20b,20c) consisting of a thin film (20)oxide superconductor being deposited on a substrate (5) and a weak link region (20a), the superconducting electrode regions (20... | 05/07/1996 |
| 5510324 | Method for manufacturing a superconducting device having an extremely thin superconducting channel The invention relates to a method of manufacturing a superconducting device, which comprises the steps of forming on a principal surface of a substrate a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide... | 04/23/1996 |
| 5509183 | Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, an extrem... | 04/23/1996 |
| 5506197 | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of c-axis oriented ox... | 04/09/1996 |
| 5494891 | Method for manufacturing three-terminal oxide superconducting devices A superconducting device comprises a substrate, a non-superconducting layer formed in a principal surface of said substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the non-superconducting layer. A supercon... | 02/27/1996 |
| 5480861 | Layered structure comprising insulator thin film and oxide superconductor thin film A layered structure formed on a substrate comprising an oxide superconductor thin film deposited on the substrate, a noble metal monolayer deposited on the oxide superconductor thin film and an insulator thin film deposited on the noble metal monolayer. T... | 01/02/1996 |
| 5471069 | Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film A superconducting device includes a superconducting channel constituted in an oxide superconductor the film deposited on a deposition surface of a substrate. A source electrode and a drain electrode are formed on the oxide superconductor thin film at oppo... | 11/28/1995 |
| 5466664 | Method for manufacturing a superconducting device having a thin superconducting channel formed of oxide superconductor material A method of manufacturing a superconducting device involves forming a thin film on the surface of a substrate, forming a superconducting gate electrode on a portion of the thin film, etching the portions of the thin film using the gate electrode as a mask... | 11/14/1995 |
| 5462919 | Method for manufacturing superconducting thin film formed of oxide superconductor having non superconducting region and device utilizing the superconducting thin film For manufacturing a superconducting thin film having at least one non-superconducting region at and near its surface portion, an oxide superconductor thin film is formed on a surface of the substrate. The oxide superconductor thin film is heated in high v... | 10/31/1995 |
| 5462918 | Superconducting field effect device with vertical channel formed of oxide superconductor material A superconducting device has a stacked structure including a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in this given order. The... | 10/31/1995 |
| 5462916 | Superconductive optoelectronic devices with the basic substance Bi2 O3 of superconductive-conjugate photoconductivity The disclosed superconductive optoelectronic device with the basic substance Bi2 O3 or Bi2 O3 ;M2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity has a substrate, a photoconductive gate ... | 10/31/1995 |
