U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Icon_funbox Quotables

"What, sir, would you make a ship sail against the wind and currents by lighting a bonfire under her deck? I pray you, excuse me, I have not the time to listen to such nonsense."

Napoleon Bonaparte ; When told of the Robert Fulton steamboat

Newsletter  PatentStorm News

Make the Most of Our Site

See this month's Top Inventors and Most Cited Patents.

Stay on top of the latest innovations by subscribing to an RSS feed.

Registered users: Manage your profile.

 

Class 257/E39.013 - Single electron tunnelling devices (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E39.012. This subclass
No. of patents: 5
Last issue date: 04/01/2008


NumberTitleIssue Date
7351997Single photon receptor
A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as for example in a semiconduct...
04/01/2008
7173275Thin-film transistors based on tunneling structures and applications
A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at leas...
02/06/2007
7145170Coupled superconducting charge quantum bit device and controlled-not gate using the same
A control quantum bit circuit and a target quantum bit circuit each have a quantum box electrode including a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode ...
12/05/2006
6573526Single electron tunneling transistor having multilayer structure
A single electron tunneling transistor which has a multi-layer structure exhibiting a single electron tunneling effect even with processing accuracy of not greater than 0.1 μm. The multi-layer structure of the single electron tunneling transistor is char...
06/03/2003
6570224Quantum-size electronic devices and operating conditions thereof
Quantum-size electronic devices comprise electrodes and at least one cluster seperated from the said electrodes by a tunnel-transparent gap. The characteristic dimensions for elements of quantum-size devices are determined by the formula in the range 1×4...
05/27/2003
 
Sign InRegister
Username  
Password   
forgot password?