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| Number | Title | Issue Date |
| 7423302 | Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node contro... | 09/09/2008 |
| 7423294 | Semiconductor light-emitting device A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter ... | 09/09/2008 |
| 7361936 | Optical transmission and/or receiving device An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an electrically conducting carr... | 04/22/2008 |
| 7352007 | Phosphorescent nanotube memory device An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel. ... | 04/01/2008 |
| 7341786 | Indium-containing wafer and method of its manufacture An indium-containing wafer from which removal of mercury can be reliably performed and a method of manufacturing such a wafer are provided in order to make the mercury C-V method, allowing characteristics of a the indium-containing wafer to be measured with high pre... | 03/11/2008 |
| 7342257 | Optical transmitter An optical transmitter of the invention comprises a thermoelectric module, a light emitting device, and a light receiving device. The thermoelectric module comprises a first plate, a second plate, and a thermoelectric transducer. The first plate is made of insulatin... | 03/11/2008 |
| 7265374 | Light emitting semiconductor device A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current ther... | 09/04/2007 |
| 7259439 | Semiconductor photodetector and its production method In a semiconductor photodetector 1 according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate 2. An n-type GaAs layer 3, an i-type GaAs layer | 08/21/2007 |
| 7253443 | Electronic device with integrally formed light emitting device and supporting member An electronic device having a semiconductor circuit formed therein includes a semiconductor device in which the semiconductor circuit is formed; and a light emitting device, formed integrally with the semiconductor device, for emitting light indicating a reference p... | 08/07/2007 |
| 7239001 | Tunable optical filtering component The invention relates to wavelength-selective and tunable optical filters for transmitting the light in a narrow optical spectral band, centered around an adjustable wavelength, and for blocking the transmission of wavelengths lying outside of this band. In a... | 07/03/2007 |
| 7220632 | Method of forming a semiconductor device and an optical device and structure thereof An integration process where a first semiconductor protective layer and a second semiconductor protective layer are formed to protect the first and second semiconductor materials, respectfully, during processing to form an optical device, such as a photodetector, an... | 05/22/2007 |
| 7208783 | Optical enhancement of integrated circuit photodetectors A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and ... | 04/24/2007 |
| 7196357 | Optical semiconductor apparatus The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an... | 03/27/2007 |
| 7148551 | Semiconductor energy detector A semiconductor energy detector includes a semiconductor substrate comprised of a semiconductor of a first conductivity type, into which an energy ray of a predetermined wavelength range is incident from an incident surface thereof. A semiconductor energy detector i... | 12/12/2006 |
| 7112457 | Method of manufacturing an opto-coupler A method of manufacturing an opto-coupler includes disposing an insulating layer on a first die and disposing an isolation layer on the insulating layer. The method further includes disposing a securing layer on the isolation layer and disposing a second die on the ... | 09/26/2006 |
| 6630994 | Transmission detection for a laser power monitor and system A power monitor for a light emitter uses an absorptive material placed in the path of the application beam. The absorptive has a measurable characteristics thereof altered by an intensity of the light beam, the absorptive material being thin enough to all... | 10/07/2003 |
| 6617795 | Multichip LED package with in-package quantitative and spectral sensing capability and digital signal output A multichip light-emitting-diode package having a support member, at least two light-emitting-diode chips disposed on the support member, at least one sensor disposed on the support member for reporting quantitative and spectral information to a controlle... | 09/09/2003 |
| 6611000 | Lighting device A lighting device includes: a plurality of LEDs arranged in an at least two-dimensionally dispersed manner; a transparent resin layer that covers the plurality of LEDs in an integrated form; a photo-detecting unit that detects an intensity of light emitte... | 08/26/2003 |
| 6507035 | Photocoupler device, method for fabricating the same, and lead frame for photocoupler device A photocoupler device includes a light emitting element; a monitor photodetector and an output photodetector for receiving light from the light emitting element; a primary side lead frame for mounting the light emitting element and the monitor photodetect... | 01/14/2003 |
| 6452669 | Transmission detection for vertical cavity surface emitting laser power monitor and system A power monitor for a light emitter uses an absorptive material placed in the path of the application beam. The absorptive has a measurable characteristics thereof altered by an intensity of the light beam, the absorptive material being thin enough to all... | 09/17/2002 |
| 6287881 | Semiconductor device with low parasitic capacitance A method of fabricating a semiconductor device having active components grown on a substrate, involves providing a semiconductor substrate on which the active components are grown, and doping the semiconductor substrate to render it non conductive and the... | 09/11/2001 |
| 5665985 | Light-emitting diode of edge-emitting type, light-receiving device of lateral-surface-receiving type, and arrayed light source A semiconductor device includes a semiconductor substrate, and a plurality of semiconductor layers formed on the semiconductor substrate and forming a concave lateral surface, the semiconductor layers including an active layer for either emitting light or... | 09/09/1997 |
| 5648979 | Assembly of VCSEL light source and VCSEL optical detector There is provided an assembly of a light source and an optical detector, each using a vertical cavity surface emitting laser (VCSEL). To control light emission of the VCSEL light source, spontaneous light emitted laterally therefrom is converted into an e... | 07/15/1997 |
| 5606572 | Integration of laser with photodiode for feedback control Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within ... | 02/25/1997 |
| 5577064 | Integration of laser with photodiode for feedback control Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within ... | 11/19/1996 |
| 5500869 | Semiconductor laser array device, semiconductor laser device, and production methods therefor A semiconductor laser array device includes a semiconductor laser chip array including a plurality of laser chips each having a prescribed chip width mounted on a bar-shaped supporting substrate and arranged parallel to a length direction of the substrate... | 03/19/1996 |
| 5446751 | Optoelectronic device An optoelectronic device includes a first n-type epitaxial layer, an active layer having a second epitaxial layer grown on said first layer and a third epitaxial layer of p-type material in the form of a ridge structure selectively grown on or over the ac... | 08/29/1995 |
| 5438586 | Apparatus with light-emitting element and method for producing it This invention relates to a light-emitting apparatus, a photosemiconductor apparatus and a method for producing a photosemiconductor wherein the light-emitting apparatus for emitting light on an object comprises a substrate; a light-emitting element provi... | 08/01/1995 |
| 5406543 | Optical head with semiconductor laser An optical head for writing and/or reading information on and/or from an optical record medium such as a magneto-optical record medium including a semiconductor substrate, a semiconductor laser mounted on a surface of the semiconductor substrate for emitt... | 04/11/1995 |
| 5374588 | Process for fabricating a compound semiconductor device A compound semiconductor device and a process for manufacturing it is disclosed. The process comprises the steps of forming a first conduction type first clad layer, a first conduction type or second conduction type activated layer, a second conduction ty... | 12/20/1994 |
| 5365540 | Vertical-to-surface optical semiconductor device and apparatus for coupling optical signals A vertical cavity of a rectangular shape having short and long sides is defined between first and second mirror layers. Thus, two resonant wavelengths are obtained in a vertical-to-surface optical semiconductor device having the vertical cavity. The reson... | 11/15/1994 |
| 5350916 | Optoelectronic device and method of manufacturing same with an electrically insulating medium having a strip-shaped flexible foil Optoelectronic devices in which optoelectronic components comprising a diode laser are fastened on a carrier plate having good heat conduction, and in which the carrier plate is provided with connection conductors for the components which are separated fr... | 09/27/1994 |
| 5315104 | Photodiode photodetector with adjustable active area The output of semiconductor optical sources is monitored by a photo detector including a photodiode having a photosensitivity which is less than the total active area of the device. Conveniently these active areas may be arranged in groups. The electrical... | 05/24/1994 |
| 5298735 | Laser diode and photodetector circuit assembly A laser diode having an output facet and a back facet is placed in contact with a designated edge of a die and oriented such that said output facet is substantially parallel to said top surface of said die. At least one photodetector is fabricated on the ... | 03/29/1994 |
| 5291057 | Rectangular shaped laser diode and symmetrically inverted triangular shaped emitting and receiving photodiodes on the same substrate A compound semiconductor device and a process for manufacturing it is disclosed. The process comprises the steps of forming a first conduction type first clad layer, a first conduction type or second conduction type activated layer, a second conduction ty... | 03/01/1994 |
| 5264392 | Fabrication technique for silicon-based optical subassemblies A novel optical subassembly arrangement is proposed. The subassembly comprises a silicon-based submount including a plurality of openings for placement of the various optical components utilized to form the optical subassembly. In particular, a silicon wa... | 11/23/1993 |
| 5191590 | Semiconductor diode laser with monitor diode A semiconductor diode laser (1) with a monitor diode (2) includes a semiconductor body with a substrate (4) and a superimposed layer structure (5) having an active layer (6) and a pn junction (7) with which radiation (24) can be generated. The monitor dio... | 03/02/1993 |
| 5181216 | Photonics module apparatus A laser (15) is mounted on a planar surface of a monocrystalline silicon mounting member (12). A spherical lens (20) is mounted in a monocrystalline silicon cover member (13) which, when abutted and registered to the mounting member (12), aligns the spher... | 01/19/1993 |
| 5151628 | Light emitting diode for photosensor and photosensor with such a diode A light emitting diode for a photosensor is so constructed that ambient temperature drifts are prevented from adversely affecting a measurment. The light emitting diode for a photosensor has a substrate (12) carrying a light emitting element (LED2 | 09/29/1992 |
| 5130531 | Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens In a reflective photosensor in which a light emitting element and a light receiving element are disposed in a mold resin, a planar optical element (micro Fresnel lens) including a first lens section for projecting a light emitted from the light emitting e... | 07/14/1992 |
