Quotables
"The radio craze will die out in time."
Thomas Edison ; 1922
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7435999 | Semiconductor chip for optoelectronics and method for the production thereof A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film ... | 10/14/2008 |
| 7294897 | Packaged microelectronic imagers and methods of packaging microelectronic imagers Microelectronic imagers, methods for packaging microelectronic imagers, and methods for forming electrically conductive through-wafer interconnects in microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging die can include a microe... | 11/13/2007 |
| 7208773 | Cap for semiconductor device In a cap for a semiconductor device in which a light transmissive window is fixed to a cap body provided with a light transmissive opening using low-melting glass as a fixing material so that the light transmissive window covers the light transmissive opening, the l... | 04/24/2007 |
| 7144748 | Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during... | 12/05/2006 |
| 7105858 | Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during... | 09/12/2006 |
| 6890784 | Semiconductor device and process for production thereof Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in... | 05/10/2005 |
| 6661033 | LED with a coupling-out structure On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offs... | 12/09/2003 |
| 6646292 | Semiconductor light emitting device and method A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contac... | 11/11/2003 |
| 6614056 | Scalable led with improved current spreading structures An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintain... | 09/02/2003 |
| 6580096 | Window for light-emitting diode A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer ... | 06/17/2003 |
| 6570190 | LED having angled sides for increased side light extraction The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ... | 05/27/2003 |
| 6552367 | High brightness light emitting diode having a layer of distributed contacts A high brightness light emitting diode having a distributed contact area comprising a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an a... | 04/22/2003 |
| 6518601 | Light-emitting diode A light-emitting diode (1) comprises a window layer (4) above an active layer (3), the window layer having edge webs (6) profiled in a sawtooth-shaped manner. Edge lines (11) with which the current is injected into the active layer (3) proceed above the e... | 02/11/2003 |
| 6468818 | Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the li... | 10/22/2002 |
| 6459098 | Window for light emitting diode A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance seco... | 10/01/2002 |
| 6448584 | Light emitting diode with high luminance and method for making the same The present invention relates to a light emitting diode with high luminance and method for making the same, and more particularly to a light emitting diode having a transparent window layer which is formed by a semiconductor film of nitrogen-containing co... | 09/10/2002 |
| 6440765 | Method for fabricating an infrared-emitting light-emitting diode A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover ... | 08/27/2002 |
| 6399409 | Method for fabricating semiconductor light emitting element The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not con... | 06/04/2002 |
| 6396862 | LED with spreading layer A semiconductor device has a window layer (8), a current spreading layer (7) below the window layer and a cladding layer (6) below the current spreading layer. The band gap energy of the spreading layer is higher than that of the window layer and lower th... | 05/28/2002 |
| 6329216 | Method of manufacturing an AlGaInP light emitting device using auto-doping A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting laye... | 12/11/2001 |
| 6323063 | Forming LED having angled sides for increased side light extraction The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ... | 11/27/2001 |
| 6316792 | Compound semiconductor light emitter and a method for manufacturing the same A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A f... | 11/13/2001 |
| 6246078 | Semiconductor light emitting element The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not con... | 06/12/2001 |
| 6245588 | Semiconductor light-emitting device and method of manufacturing the same A semiconductor light-emitting device includes a substrate formed of an AlGaAs-base semiconductor material. A light-emitting layer forming portion of an AlGaInP-base compound semiconductor material is formed on the substrate so as to provide a light emitt... | 06/12/2001 |
| 6229160 | Light extraction from a semiconductor light-emitting device via chip shaping The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ... | 05/08/2001 |
| 6225648 | High-brightness light emitting diode A high-brightness light emitting diode is provided. It comprises a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed ... | 05/01/2001 |
| 6222205 | Layered semiconductor structure for lateral current spreading, and light emitting diode including such a current spreading structure In order to achieve lateral current spreading between a current injecting or current collecting surface of an electrode and an active surface of an active region in a semiconductor device such as a light emitting diode, a layered semiconductor heterostruc... | 04/24/2001 |
| 6207972 | Light emitting diode with transparent window layer The light brightness of a semiconductor LED is increased by employing a light transmitting window comprising ZnO. In another embodiment, current crowding is reduced, efficiency increased and reliability (lifetime) increased by forming a thin semiconductor... | 03/27/2001 |
| 6191438 | Light emitting diode array A light emitting diode array includes a plurality of light emitting elements, provided on a substrate having a first conductivity type, for causing light to pass through a first area thereof. Each of the plurality of light emitting elements includes an ac... | 02/20/2001 |
| 6169298 | Semiconductor light emitting device with conductive window layer A semiconductor light emitting device, such as the light emitting diode (LED) or the laser diode (LD), having a structure in which a light emitting area is a double heterostructure or a multi-layer quantum well structure. The light emitting area is formed... | 01/02/2001 |
| 6107647 | Semiconductor AlGaInP light emitting device A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting laye... | 08/22/2000 |
| 6107648 | Semiconductor light emitting device having a structure which relieves lattice mismatch A light emitting layer forming portion is formed of an AlGaInP-based compound semiconductor and having an n-type layer and a p-type layer to form a light emitting layer on the substrate. A large bandgap energy semiconductor layer is provided on a surface ... | 08/22/2000 |
| 6083769 | Method for producing a light-emitting diode A method for producing a light-emitting diode includes the steps of: forming a single-layered or multi-layered Alx Gay In1-x-y P (0ࣘxࣘ1, 0ࣘyࣘ1) light-emitting layer, an Alx Gay In1-x-y | 07/04/2000 |
| 6074889 | Method for producing semiconductor light-emitting device with undoped spacer layer A semiconductor light-emitting device includes: a semiconductor substrate of a first conductive type, and a multilayered structure formed on the semiconductor substrate. The multilayered structure includes a first cladding layer of the first conductive ty... | 06/13/2000 |
| 6066862 | High brightness light emitting diode A semiconductor light emitting diode includes a first conductivity type compound semiconductor substrate, a first conductivity type lower cladding layer, an active layer of undoped AlGaInP or multiple quantum well structure, and a second conductivity type... | 05/23/2000 |
| 6063643 | Surface-emission type light-emitting diode and fabrication process thereof An n-type GaAs layer as a buffer layer, an n-type (Al0.7 Ga0.3)0.5 In0.5 P layer, an active layer, a p-type (Al0.7 Ga0.3)0.5 In0.5 P layer, a thin layer of Alx | 05/16/2000 |
| 6057562 | High efficiency light emitting diode with distributed Bragg reflector A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate on a first electrode, a first cladding layer of a first conductivity type on the substrate, an active layer on the first cladding layer, a secon... | 05/02/2000 |
| 6057563 | Light transparent superlattice window layer for light emitting diode Disclosed is a light transparent window layer for light transmitting diodes. The light transparent window layer is formed by growing a plurality of AlGaInP superlattice layers such that the uniformity of current distribution within LED chip can be enhance... | 05/02/2000 |
| 6037603 | Opto-electronic device with transparent high lateral conductivity current spreading layer An opto-electronic device, such as a light-emitting diode, comprises a transparent high lateral conductivity current spreading layer 31 overlying a conventional p-n junction active region 10. The current spreading layer 31 comprises a multiple quantum-wel... | 03/14/2000 |
| 5981976 | Epitaxial wafer for AlGaInP light-emitting diode An epitaxial wafer for an AlGaInP light-emitting device includes a p-type GaAs substrate, a reflection layer in the form of a laminated body of multiple semiconductor layers provided over the substrate, a double hetero-junction light-emitting structure of... | 11/09/1999 |
