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| Number | Title | Issue Date |
| 7435998 | Semiconductor device, method of manufacturing the same, electro-optic device and electronic apparatus with a protective film The invention provides a semiconductor device, a method of manufacturing the same, an electro-optic device and an electronic apparatus which are capable of addressing or solving a problem of mechanical mounting of a semiconductor element chip on a substrate. A semic... | 10/14/2008 |
| 7432118 | Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The ... | 10/07/2008 |
| 7381581 | Method for manufacturing vertical cavity surface emitting laser and multiple wavelength surface emitting laser, vertical cavity surface emitting laser, multiple wavelength surface emitting laser, and optical communication system A method for manufacturing a vertical cavity surface emitting laser formed by laminating a plurality of layers on a substrate, includes coupling two layers of the plurality of layers by joining at room temperature or joining while heating. ... | 06/03/2008 |
| 7345315 | Gallium nitride based light-emitting device A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white c... | 03/18/2008 |
| 7306961 | Optical device, surface emitting type device and method for manufacturing the same The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that ... | 12/11/2007 |
| 7274040 | Contact and omnidirectional reflective mirror for flip chipped light emitting devices A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying th... | 09/25/2007 |
| 7233029 | Optical functional film, method of forming the same, and spatial light modulator, spatial light modulator array, image forming device and flat panel display using the same An optical functional film comprises a multilayer film formed by stacking a plurality of films. The plurality of films are formed by a same material and refractive indices of adjacent films are different. ... | 06/19/2007 |
| 7217947 | Semiconductor light source and method of making A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandw... | 05/15/2007 |
| 7151282 | Light emitting diode A green LED has a substrate, a GaN heavily n-doped bottom confining layer, an active region, an upper GaN confinement layer, and a semi-transparent ohmic contact layer. The active region has less than or equal to three highly compressively strained quantum wells. Th... | 12/19/2006 |
| 7102172 | LED luminaire A modular light emitting diode (LED) mounting configuration is provided including a light source module having a plurality of pre-packaged LEDs arranged in a serial array. The module is connected to a heat dissipating plate configured to mount to an electrical junct... | 09/05/2006 |
| 6940174 | Metallic photonic box and its fabrication techniques A metallic photonic box capable of intensifying light at a certain wavelength, includes: a metallic surrounding forming a resonance chamber; and an insulator layer, disposed in the resonance chamber, having a predetermined dimension defining a cut-off wavelength, wh... | 09/06/2005 |
| 6697403 | Light-emitting device and light-emitting apparatus using the same A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that... | 02/24/2004 |
| 6661031 | Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode A resonant-cavity light-emitting diode includes a semiconductor light-emitting layer sandwiched between an under and an upper semiconductor distributed Bragg reflector mirror layer, which are formed on the substrate, a light extracting section formed on t... | 12/09/2003 |
| 6656756 | Technique for a surface-emitting laser diode with a metal reflector The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high... | 12/02/2003 |
| 6653660 | Vertical cavity-type semiconductor light-emitting device and optical module using vertical cavity-type semiconductor light-emitting device A vertical cavity-type semiconductor light-emitting device comprises a first semiconductor distributed Bragg reflector type mirror formed on a substrate, a first semiconductor layer formed on the first semiconductor distributed Bragg reflector type mirror... | 11/25/2003 |
| 6653163 | Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge car... | 11/25/2003 |
| 6649432 | Resonant microcavity display utilizing mirrors exhibiting anomalous phase dispersion A resonant microcavity display comprises a thin-film resonant microcavity (20, 50, 60) with an active layer (21). The microcavity (20, 50, 60) comprises a front reflector (22, 52), the active region (21) deposited upon the front reflector, and a back refl... | 11/18/2003 |
| 6636185 | Head-mounted display system A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal display or a light emitting display.... | 10/21/2003 |
| 6627923 | Resonant microcavities A condensed matter structure includes a substrate having a resonant microcavity formed by reflectors, having a reflectivity R, arranged relative to an optically-active material to form a cavity. The optically-active material has a thickness L, an optical ... | 09/30/2003 |
| 6593978 | Method for manufacturing active matrix liquid crystal displays The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors af... | 07/15/2003 |
| 6570191 | Surface-light-emitting device including AlGalnP and AlGaAs multi-film reflecting layers A surface-light-emitting device including a semiconductor substrate, and a laminar semiconductor structure consisting of a plurality of semiconductor layers formed by epitaxial growth on the semiconductor substrate, the laminar semiconductor structure inc... | 05/27/2003 |
| 6563141 | Optical devices A solid-state, surface-emitting, optical device such as a light emitting diode (LED) or vertical cavity surface emitting laser (VCSEL) has a body of optical gain medium overlying a high reflectivity distributed BRAGG reflector (DBR) mirror which is carrie... | 05/13/2003 |
| 6546031 | Extended wavelength strained layer lasers having strain compensated layers Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operatio... | 04/08/2003 |
| 6535541 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes first and second mirrors, a substrate, first and second active regions and a plurality of individual active regions. Each of an individual active region is positioned between the first and second active regions. A firs... | 03/18/2003 |
| 6521940 | High density electronic circuit modules The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of comp... | 02/18/2003 |
| 6515308 | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure. The p-n tunnel junction reduces the numbe... | 02/04/2003 |
| 6495859 | Opto-electronic component made from II-VI semiconductor material A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeT... | 12/17/2002 |
| 6493371 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first oxide layer is positioned... | 12/10/2002 |
| 6493372 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. A first etched layer is positioned between the first and second mirrors. A first tunne... | 12/10/2002 |
| 6493373 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fused mirror. At least a first tunne... | 12/10/2002 |
| 6490311 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a lattice relaxed mirror. At least a f... | 12/03/2002 |
| 6486929 | Bonded layer semiconductor device The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors af... | 11/26/2002 |
| 6487230 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first ion implantation layer is... | 11/26/2002 |
| 6487231 | Vertical cavity apparatus with tunnel junction A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a dielectric mirror. At least a first ... | 11/26/2002 |
| 6483127 | Semiconductor light emitting device A semiconductor light emitting device has a substrate made of a semiconductor of a first conductivity-type, a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate, an active la... | 11/19/2002 |
| 6459713 | Conductive element with lateral oxidation barrier A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed th... | 10/01/2002 |
| 6455340 | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate remov... | 09/24/2002 |
| 6445010 | Optoelectronic component emitting incoherent radiation The radiation emitting optoelectronic component has a radiation generating body with a planar optical waveguide and a wave guiding layer. The wave guiding layer has a radiation generating zone in which electromagnetic radiation is generated while the comp... | 09/03/2002 |
| 6424020 | High Density electronic circuit modules The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of comp... | 07/23/2002 |
| 6420199 | Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques.... | 07/16/2002 |
