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"During my service in the United States Congress, I took the initiative in creating the Internet."
Al Gore ; The basis for the later misquote by US Republicans that Gore had "invented" the Internet. Gore was the leading political champion of the modern-day Internet.
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| Number | Title | Issue Date |
| 7442966 | Electromagnetic radiation emitting semiconductor chip and procedure for its production A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor lay... | 10/28/2008 |
| 7439549 | LED module An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which emit light of differing central wavelengths during operation, so tha... | 10/21/2008 |
| 7439551 | Nitride-based compound semiconductor light emitting device The nitride-based compound semiconductor light emitting device includes a first ohmic electrode, a bonding metal layer, a second ohmic electrode, a nitride-based compound semiconductor layer, and a transparent electrode stacked in this order on a support substrate, ... | 10/21/2008 |
| 7432117 | Light-emitting diode and manufacturing method thereof A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adh... | 10/07/2008 |
| 7425460 | Method for implementation of back-illuminated CMOS or CCD imagers A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, ... | 09/16/2008 |
| 7399996 | LED package and method for producing the same An LED package and method for producing the same are described. The LED package has an LED die with a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. An insulation layer is formed on the cond... | 07/15/2008 |
| 7394106 | Electro-optical device having a microlens layer with a thickness defined by supporting bodies interposed between the two substrates An electro-optical device includes first and second substrates that face each other, support bodies that are interposed between both substrates so as to define a gap between both substrates, and a microlens layer that is formed between both substrates. The first sub... | 07/01/2008 |
| 7394112 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 07/01/2008 |
| 7393709 | Microlens manufacturing method The present invention provides a method for manufacturing a microlens in a semiconductor substrate having a first surface and a second surface, comprising the steps of preparing the semiconductor substrate, forming a first resist layer approximately cylindrical in f... | 07/01/2008 |
| 7391059 | Isotropic collimation devices and related methods Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spat... | 06/24/2008 |
| 7372078 | Vertical gallium-nitride based light emitting diode A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation ... | 05/13/2008 |
| 7368795 | Image sensor module with passive component An image sensor module includes a flexible printed circuit board having an upper surface, which is formed with electric circuits and a lower surface. A passive component is arranged on the upper surface of the circuit board. A substrate has a first surface, a second... | 05/06/2008 |
| 7368803 | System and method for protecting microelectromechanical systems array using back-plate with non-flat portion Disclosed is an electronic device utilizing interferometric modulation and a package of the device. The packaged device includes a substrate, an interferometric modulation display array formed on the substrate, and a back-plate. The back-plate is placed over the dis... | 05/06/2008 |
| 7358540 | Organic adhesive light-emitting device with ohmic metal contact An organic adhesive light-emitting device with an ohmic metal contact, including a conductive substrate having a first surface and a second surface over the upper surface, a light-emitting stack layer, an ohmic metal bulge formed over the first surface of the conduc... | 04/15/2008 |
| 7354783 | Method for fabricating a semiconductor component based on GaN A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body a... | 04/08/2008 |
| 7344903 | Light emitting device processes Light-emitting devices, and related components, processes, systems and methods are disclosed. ... | 03/18/2008 |
| 7341880 | Light emitting device processes Light-emitting devices, and related components, processes, systems and methods are disclosed. ... | 03/11/2008 |
| 7338825 | Structure for optical device and method of fabricating the same Provided are a structure for an optical device and method of fabricating the same. The structure includes: a light scattering layer producing nanoparticles due to externally provided thermal energy; a protective layer protecting the light scattering layer; and a cap... | 03/04/2008 |
| 7335924 | High-brightness light emitting diode having reflective layer An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal ... | 02/26/2008 |
| 7326967 | Light emitting diode having an omnidirectional reflector including a transparent conductive layer The present invention is related to a light emitting diode of an omnidirectional reflector providing with a transparent conductive layer. In the present invention, a cohesion layer is formed between a transparent layer and a metal reflection layer to improve the coh... | 02/05/2008 |
| 7323723 | Semiconductor light-emitting device using phosphors for performing wavelength conversion A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from... | 01/29/2008 |
| 7319248 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining... | 01/15/2008 |
| 7282748 | Light emitting module and lamp A light-emitting module having a light-emitting efficiency. The light-emitting module that emits light includes a semiconductor light-emitting element that emits light; and a light transmission member that is provided to cover the semiconductor light-emitting elemen... | 10/16/2007 |
| 7279722 | Light emitting device with adjustable reflector cup A light emitting device has a light emitting diode (LED), a reflector cup, and one or more adjustment mechanisms to control the intensity profile of light emitted from the light emitting device. The reflector cup has a base and a sidewall extending outward from the ... | 10/09/2007 |
| 7279719 | Light emitting diode A counter reflecting surface is provided opposite to a light emitting element in its light emitting surface. A side reflecting member having an inclined reflecting surface is provided apart from and so as to surround the light emitting element. A phosphor layer is p... | 10/09/2007 |
| 7264976 | Advance ridge structure for microlens gapless approach A method of manufacturing a plurality of microlenses on a substrate comprises forming a grid having raised ridges defining a plurality of openings on the substrate and forming a plurality of patterned photoresist features each disposed within one of the plurality of... | 09/04/2007 |
| 7262437 | Radiation source and method for producing a lens mould A radiation source has a field of semiconductor chips, which are disposed below a field of micro-lenses (8) disposed in a hexagonal lattice structure. The radiation source is distinguished by high radiation output and radiation density. ... | 08/28/2007 |
| 7253445 | High-efficiency radiating device A device emits radiation at a predetermined wavelength. The device includes a light-emitting structure which generates the radiation. The device further includes at least one reflective edge in radiative communication with the light-emitting structure, the reflectiv... | 08/07/2007 |
| 7242031 | Semiconductor light emitting apparatus and its manufacturing method A semiconductor light emitting apparatus comprises: a semiconductor light emitting device; resin that seals the semiconductor light emitting device; and antireflective coating provided on a surface of the resin. The antireflective coating is made of material having ... | 07/10/2007 |
| 7235818 | Flip chip type nitride semiconductor light emitting device and manufacturing method thereof Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of t... | 06/26/2007 |
| 7227193 | Solid-state image sensor with micro-lenses for preventing shading A solid-state image sensor prevents shading while maintaining the wide dynamic range of an image signal without reducing its resolution. The image sensor has its photodiode array including arrangement patterns, each of which includes a smaller micro-lens and larger ... | 06/05/2007 |
| 7227192 | Light-emitting device and manufacturing process of the light-emitting device A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting... | 06/05/2007 |
| 7223999 | Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same A liquid crystal display, in accordance with the present invention, includes a first substrate having a thin film transistor and a first electrode formed thereon. The first electrode is electrically connected to the thin film transistor. A first insulating layer is ... | 05/29/2007 |
| 7211832 | Light emitting apparatus A light emitting apparatus has: a support; a wiring layer that is formed on the support; and an LED element that is flip-chip mounted on the wiring layer formed on the support. The wiring layer has: a conductive layer that is formed on the support and is electricall... | 05/01/2007 |
| 7211831 | Light emitting device with patterned surfaces Light-emitting devices, and related components, systems and methods are disclosed. The light-emitting device can include a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region. A surface of the... | 05/01/2007 |
| 7211833 | Light emitting diodes including barrier layers/sublayers Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer,... | 05/01/2007 |
| 7208775 | Polarized radiation source using spin extraction/injection Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selectio... | 04/24/2007 |
| 7187009 | Light emitting diode device for illumination objects A plurality of LEDs are mounted on a substrate aggregation, a transparent layer is formed on the substrate aggregation. The transparent layer between adjacent divisions is removed to form an individual transparent layer and to form a groove around the individual tra... | 03/06/2007 |
| 7172909 | Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the li... | 02/06/2007 |
| 7148520 | Diode having vertical structure and method of manufacturing the same A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. ... | 12/12/2006 |
