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Neuroimaging as a Marketing Tool
Neuroimaging as a means for validating whether a stimulus such as advertisement, communication, or product evokes a certain mental response such as emotion, preference, or memory, or to predict the consequences of the stimulus on later behavior such as consumption or purchasing.
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| Number | Title | Issue Date |
| 7438978 | Transparent conductive film, transparent conductive plate, and touch panel A touch panel having excellent durability, in which depression is scarcely generated on the surface of the touch panel by pushing the surface with a pen, and a transparent conductive film and plate useful in the touch panel are provided. The transparent conductive f... | 10/21/2008 |
| 7439589 | Active matrix substrate and repairing method thereof An active matrix substrate including a substrate, a plurality of pixel units, a plurality of driving lines, an electron static discharge (ESD) protection circuit and a floating line is provided. The substrate has an active region and a peripheral region connected wi... | 10/21/2008 |
| 7420222 | Light emitting diodes including transparent oxide layers Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substra... | 09/02/2008 |
| 7420208 | Light emitting device and method of manufacturing the same The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen o... | 09/02/2008 |
| 7408192 | Organic light emitting display device and method of fabricating the same An organic light emitting display device and a method of fabricating the same. A dummy pattern is formed in an emission region to increase the step height of the emission region by an electrode material while a thin film transistor is fabricated, so that a distance ... | 08/05/2008 |
| 7408191 | Luminescent device and process of manufacturing the same In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-e... | 08/05/2008 |
| 7372075 | Optical substrate, light emitting element, display device and manufacturing methods thereof The present invention relates to an optical substrate comprising a transparent substrate, a low refractive index layer, whose refractive index is lower than that of the transparent substrate, disposed over the transparent substrate, and a solgel film disposed over t... | 05/13/2008 |
| 7372081 | Nitride light emitting device and manufacturing method thereof A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the mu... | 05/13/2008 |
| 7335919 | Active matrix organic electroluminescent display device including organic thin film transistor and method of manufacturing the display device Provided is an active matrix organic electroluminescent (EL) display device including an organic thin film transistor (TFT), preferably n-type, having a higher aperture ratio and easily realized in an array structure. The display device includes a facing electrode; ... | 02/26/2008 |
| 7335924 | High-brightness light emitting diode having reflective layer An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal ... | 02/26/2008 |
| 7326967 | Light emitting diode having an omnidirectional reflector including a transparent conductive layer The present invention is related to a light emitting diode of an omnidirectional reflector providing with a transparent conductive layer. In the present invention, a cohesion layer is formed between a transparent layer and a metal reflection layer to improve the coh... | 02/05/2008 |
| 7304351 | Active matrix substrate An active matrix substrate is provided, including a substrate, a plurality of pixel units, a static releasing conductive line and an ESD protection circuit, wherein the substrate has an active area and a peripheral area adjacent to each other. The pixel units are ar... | 12/04/2007 |
| 7297988 | Flip chip type nitride semiconductor light emitting device The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconduc... | 11/20/2007 |
| 7297565 | Liquid crystal display device and fabricating method thereof A liquid crystal display device, and a fabricating method thereof, having organic pixel electrodes. The organic pixel electrodes are benefically comprised of a light sensitive organic material, preferably PEDOT (polyethylenedioxythiophene). The organic pixel electro... | 11/20/2007 |
| 7291860 | Thin film transistor array panel A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, a... | 11/06/2007 |
| 7274040 | Contact and omnidirectional reflective mirror for flip chipped light emitting devices A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying th... | 09/25/2007 |
| 7250634 | Light-emitting device, method of manufacturing the same, and display unit Light-emitting devices capable of preventing separation or alteration of a first electrode to obtain high performance, methods of manufacturing the light-emitting device, and display units are provided. A first electrode as an anode, an insulating film, an organic l... | 07/31/2007 |
| 7247568 | Method for manufacturing a transparent element with invisible electrodes A conductive pattern, made of a transparent conductive oxide, such as ITO including electrodes (2) and conductive paths (4) is formed on one face of a transparent substrate (3) made of sapphire or toughened glass, then coated with a first layer ... | 07/24/2007 |
| 7217956 | Light active sheet material Device structures for sheets of light active material. A first substrate has a transparent first conductive layer. A pattern of light active semiconductor elements are fixed to the first substrate. The light active semiconductor elements have an n-side and a p-side.... | 05/15/2007 |
| 7199401 | Light-emitting semiconductor device An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is ... | 04/03/2007 |
| 7157307 | Zn-base semiconductor light-emitting device and method for manufacturing same On the surface of a substrate 1, a precursory buffer layer 2′ composed of an In-base compound or a Zn-base compound, not contained in the substrate 1, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a... | 01/02/2007 |
| 7102172 | LED luminaire A modular light emitting diode (LED) mounting configuration is provided including a light source module having a plurality of pre-packaged LEDs arranged in a serial array. The module is connected to a heat dissipating plate configured to mount to an electrical junct... | 09/05/2006 |
| 7102164 | Semiconductor device having a conductive layer with a light shielding part A semiconductor device having a substrate: a semiconductor film having at least two impurity regions, and at least one channel forming region; a gate insulating film; a gate electrode; an interlayer insulating film having an organic resin; a first conductive layer c... | 09/05/2006 |
| 7052931 | Flat panel display device with first electrode having concentration gradient and fabrication method thereof A method of fabricating a flat panel display comprises forming a first electrode, forming at least one organic electroluminescent layer on the first electrode, forming an second electrode, wherein the first electrode comprises a first component of a transparent mate... | 05/30/2006 |
| 6603152 | Blue light emitting diode with electrode structure for distributing a current density Disclosed is a blue light emitting diode comprising a laminate structure formed in the center of a first conductive nitride semiconductor layer, a first electrode formed on a part of a transparent metal layer included in the laminate structure and a secon... | 08/05/2003 |
| 6573117 | GaN related compound semiconductor and process for producing the same A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electr... | 06/03/2003 |
| 6555847 | Nitride based semiconductor light emitting element A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity type stacked on a su... | 04/29/2003 |
| 6521999 | Transparent electrode film and group III nitride semiconductor device A transparent electrode film containing gold for covering the uppermost layer of a group III nitride semiconductor device has a first layer formed on the uppermost layer and not thicker than 15 Å, and a second layer formed on the first layer and containi... | 02/18/2003 |
| 6500689 | Process for producing GaN related compound semiconductor A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electr... | 12/31/2002 |
| 6447938 | Gallium nitride collector grid solar cell A transparent conductive coating (TCC) formed from gallium nitride GaN on a sapphire substrate. In order to account for the lattice mismatch between the GaN and the sapphire substrate, a nucleation layer is formed on the sapphire substrate. A mask, for ex... | 09/10/2002 |
| 6420731 | Light emitting diode and manufacturing method thereof An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a... | 07/16/2002 |
| 6417525 | Semiconductor light emitter with current block region formed over the semiconductor layer and electrode connection portion for connecting the pad electrode to the translucent electrode A semiconductor light emitter characterized by including a semiconductor layer for providing an electric current block region and an electric current injection region on a surface thereof, an electric current block layer formed on the semiconductor layer ... | 07/09/2002 |
| 6403987 | Electrode for light-emitting semiconductor devices An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode an... | 06/11/2002 |
| 6380564 | Semiconductor light emitting device A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type se... | 04/30/2002 |
| 6344665 | Electrode structure of compound semiconductor device An electrode structure of compound semiconductor device. The compound semiconductor device has a substrate, an n-type layer over entire substrate, a mesa-like p-type layer on partial surface of the n-type layer, a transparent conductive layer on the mesa-... | 02/05/2002 |
| 6331356 | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bia... | 12/18/2001 |
| 6326223 | Electrode for light-emitting semiconductor devices and method of producing the electrode An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode an... | 12/04/2001 |
| 6316792 | Compound semiconductor light emitter and a method for manufacturing the same A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A f... | 11/13/2001 |
| 6291840 | GaN related compound semiconductor light-emitting device A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrod... | 09/18/2001 |
| 6287947 | Method of forming transparent contacts to a p-type GaN layer A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized condition, rather than oxidizing the metal only after it has been ... | 09/11/2001 |
