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"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
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| Number | Title | Issue Date |
| 7385653 | LED package and backlight assembly for LCD comprising the same An LED package used as a light source in a backlight assembly for an LCD includes a substrate, a plurality of light scattering protrusions on the upper surface of the substrate, LEDs separated from each other by designated intervals and arranged in a line on the sub... | 06/10/2008 |
| 7384880 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface. ... | 06/10/2008 |
| 7341786 | Indium-containing wafer and method of its manufacture An indium-containing wafer from which removal of mercury can be reliably performed and a method of manufacturing such a wafer are provided in order to make the mercury C-V method, allowing characteristics of a the indium-containing wafer to be measured with high pre... | 03/11/2008 |
| 7342260 | Light emitting diode A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination... | 03/11/2008 |
| 7309619 | Light-emitting element, production method thereof, and light-emitting apparatus The present invention provides an light-emitting element in which an organic compound layer containing a carbonate, for example Cs2CO3 and Li2CO3, as a dopant is in substantially electrical contact with a cathode by provid... | 12/18/2007 |
| 7297566 | Method for producing a display unit A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by t... | 11/20/2007 |
| 7264979 | Method of manufacturing light emitting device A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. Aft... | 09/04/2007 |
| 7221003 | Light emitting device A light-emitting device can include a blue LED chip that is covered in a sealing resin composed of a filling resin mixed with a wavelength conversion material, such as a yellow fluorescent material. Light from the blue LED chip is mixed with a light from the yellow ... | 05/22/2007 |
| 7122393 | Optical semiconductor device and method of fabricating the same An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than t... | 10/17/2006 |
| 7115217 | Phosphor for light sources and associated light source A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga,... | 10/03/2006 |
| 7083995 | Optical semiconductor device and process for producing the same A resist is coated on a substrate. The resist is exposed to a pattern of a plurality of diffraction gratings for setting pitches corresponding respectively to oscillation wavelengths for the plurality of semiconductor lasers and for setting heights of the diffractio... | 08/01/2006 |
| 7078354 | Method of manufacturing semiconductor device having oxide films with different thickness After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate o... | 07/18/2006 |
| 7063807 | Phosphor for light sources and associated light source A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga,... | 06/20/2006 |
| 6686676 | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same UV reflectors incorporated in UV LED-based light sources reduce the amount of UV radiation emission into the surroundings and increase the efficiency of such light sources. UV reflectors are made of nanometer-sized particles having a mean particle diamete... | 02/03/2004 |
| 6677618 | Compound semiconductor light emitting device Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator str... | 01/13/2004 |
| 6657382 | Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture A light emitting device and display apparatus using a plurality of light emitting devices can drastically reduce contrast loss due to light from an external source. The light emitting device has (a) light emitting chip(s) and a first layer covering the li... | 12/02/2003 |
| 6653765 | Uniform angular light distribution from LEDs A light source (10) includes a light emitting component (32), such as a UV/blue light emitting diode or laser diode, a layer (46) of a light scattering material (42), and a layer (48) of a phosphor material (44). The phosphor material converts a portion o... | 11/25/2003 |
| 6635363 | Phosphor coating with self-adjusting distance from LED chip A light source (10) includes a light emitting component (32), such as a UV/blue light emitting diode or laser diode. A layer (62, 162, 262, 362) of a phosphor material is spaced from the light emitting component by a layer (60, 160, 260, 360) of a materia... | 10/21/2003 |
| 6630689 | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa In one embodiment of the present invention, a highly reflective dielectric stack is formed on the mesa wall of a flip-chip LED. The layers of the dielectric stack are selected to maximize reflection of light incident at angles ranging from -10 to 30 degre... | 10/07/2003 |
| 6623142 | Method and apparatus for correcting optical non-uniformities in a light emitting diode The invention adjusts the spectral characteristics of a light emitting diode (LEDs) by placing a filter in the LEDs light emission path. The filter is printed on the lens of the LED or printed on a cap that is later attached to the LED via ink jet printin... | 09/23/2003 |
| 6620709 | Fabrication of semiconductor materials and devices with controlled electrical conductivity A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MO... | 09/16/2003 |
| 6618409 | Passivation of semiconductor laser facets A method of passivating an edge-emitting semiconductor diode laser and the resultant product. Laser bars are cleaved in air from a wafer containing multiple laser bars. The bars are placed into a vacuum processing chamber in which two steps are performed ... | 09/09/2003 |
| 6567435 | VCSEL power monitoring system using plastic encapsulation techniques A plastic encapsulated VCSEL and power monitoring system wherein the VCSEL and photodetector are encapsulated in an optoelectronic plastic molding material. A tilted window, with a partially reflective coating on one side, is attached to the top of the pl... | 05/20/2003 |
| 6469357 | Article comprising an oxide layer on a GaAs or GaN-based semiconductor body We have found that a single crystal, single domain oxide layer of thickness less than 5 nm can be grown on a (100) oriented GaAs-based semiconductor substrate. Similar epitaxial oxide can be grown on GaN and GaN-based semiconductors. The oxide typically i... | 10/22/2002 |
| 6469324 | Semiconductor light-emitting device and method for manufacturing the same A semiconductor light emitting device comprising an AlGaInP lower confining layer, an AlGaInP active layer, an AlGaInP upper confining layer and a window layer on the upper confining layer using the MOVPE process. The device further contains a hybrid anti... | 10/22/2002 |
| 6376273 | Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlie... | 04/23/2002 |
| 6323052 | Compound semiconductor light emitting device and method of fabricating the same Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses... | 11/27/2001 |
| 6278139 | Semiconductor light-emitting diode A semiconductor light emitting diode (10) is formed on an n-type GaAs substrate and includes: an AlGaInP based double heterojunction structure in which an active layer (16) is sandwiched between cladding layers (14, 18); an upper P-type contact layer 20; ... | 08/21/2001 |
| 6271069 | Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga | 08/07/2001 |
| 6238945 | Method of making P-type group III-nitride semiconductor device having improved P contact A Group III-nitride semiconductor device that has a low voltage-drop p-contact and comprises a substrate layer, a metal electrode and an intermediate layer sandwiched between the substrate layer and the metal electrode. The substrate layer is a layer of a... | 05/29/2001 |
| 6018167 | Light-emitting device An LED chip 41 is mounted in a horizontal state in such a manner that a PN junction surface 42 is in perpendicular to a unit substrate 45. A side surface of a crystal surface of the LED chip 41 is recessed in such a manner as to have a distance with respe... | 01/25/2000 |
| 6008525 | Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a... | 12/28/1999 |
| 5981978 | Superluminescent diode and method for manufacturing the same A superluminiscent diode includes: a semiconductor substrate of a first conductivity type lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cla... | 11/09/1999 |
| 5955748 | End face light emitting type light emitting diode An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged... | 09/21/1999 |
| 5933705 | Passivation and protection of semiconductor surface A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe pro... | 08/03/1999 |
| 5930656 | Method of fabricating a compound semiconductor device A substrate for forming a compound semiconductor device is placed in a reaction chamber. An MOCVD method or a GS-MBE method is used to grow compound semiconductor layers on the substrate. The grown layers include, for example, a GaN buffer layer, an n-GaN... | 07/27/1999 |
| 5925896 | Surface-emitting semiconductor optical device A surface-emitting semiconductor optical device is provided, which has a high external quantum efficiency and a high coupling efficiency with an optical fiber. This device has a multilayer device structure including an optical absorption layer formed by a... | 07/20/1999 |
| 5882779 | Semiconductor nanocrystal display materials and display apparatus employing same A class of high efficiency (e.g., ࣙ20%) materials for use as display pixels to replace conventional phosphors in television, monitor, and flat panel displays. The materials are comprised of nanocrystals such as CdSx Se1-x, CuCl, Ga... | 03/16/1999 |
| 5874747 | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same A green-blue to ultraviolet light emitting semiconductor laser having a top contact, a Bragg reflector, cladding layer, active layer, cladding layer, buffer, substrate, bottom contact and a passivation layer. The key aspect is a Ga*N material on a base st... | 02/23/1999 |
| 5861636 | Surface emitting visible light emiting diode having ring-shaped electrode Disclosed is a surface emitting visible light emitting diode, which has: a first conductivity-type substrate; and a first conductivity-type buffer layer, a first conductivity-type cladding layer, an active layer, a second conductivity-type cladding layer,... | 01/19/1999 |
