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| Number | Title | Issue Date |
| 7402840 | Selective filtering of wavelength-converted semiconductor light emitting devices A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs th... | 07/22/2008 |
| 7402447 | Semiconductor laser device and method for fabricating the same A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a co... | 07/22/2008 |
| 7372076 | Light emitting device By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between t... | 05/13/2008 |
| 7282745 | Nitride based semiconductor light-emitting device The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAly | 10/16/2007 |
| 7122393 | Optical semiconductor device and method of fabricating the same An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than t... | 10/17/2006 |
| 6747298 | Collets for bonding of light emitting diodes having shaped substrates Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do... | 06/08/2004 |
| 6614585 | Phase conjugating structure for mode matching in super luminescent diode cavities A mode matching gain element for an optical system is described, that supports a single mode of the optical signal, and that matches the incoming wavefront to a required outgoing wavefront. The incoming wavefront is passed through a phase conjugating stru... | 09/02/2003 |
| 6593602 | Edge emission type semiconductor device for emitting super luminescent light, its manufacture and spatial optical communication device A substrate has first and second edges disposed in parallel and a principal surface connecting the first and second edges. An active layer is formed on the principal surface. A ridge-like region is disposed on the active layer along a path interconnecting... | 07/15/2003 |
| 6429462 | Injection incoherent emitter An injection incoherent emitter outputs a directed beam of light resulting from spontaneous emission. The emitter provides small divergence angles and enhanced external efficiency, as well as increased energy and light power. Specific ranges of compositio... | 08/06/2002 |
| 6430207 | High-power laser with transverse mode filter A single-transverse-mode laser has a gain medium and a single-transverse-mode fiber disposed within a resonance cavity. The single-transverse-mode fiber has a filter portion and a partial reflection portion. The filter portion of the single-transverse-mod... | 08/06/2002 |
| 6417524 | Light emitting semiconductor device Light emitting diodes each comprising a body of semiconductor material having a first side surface, a second side surface, and a top surface; and a stripe of conductive material over the top surface of the body. The stripe has a first segment and a second... | 07/09/2002 |
| 6339606 | High power semiconductor light source A semiconductor light source comprises superluminescent diodes (SLDs) disposed on a substrate having a facet, channels separating the SLDs, and a mode expander region. Each SLD has a diamond shaped active region such that the front and rear end of each SL... | 01/15/2002 |
| 6323052 | Compound semiconductor light emitting device and method of fabricating the same Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses... | 11/27/2001 |
| 6184542 | Superluminescent diode and optical amplifier with extended bandwidth A superluminescent diode having emission layers which emit different wavelengths of light disposed side-by-side whereby light emitting in a first direction from an emission layer having a longer wavelength than an adjacent layer in the first direction is ... | 02/06/2001 |
| 6097743 | Superluminescent diode and optical amplifier with wavelength stabilization using WDM couplers and back output light A wavelength division multiplexer (WDM) is used to transmit the output light from a superluminescent diode (SLD) over a band approximately equal to the full width half maximum (FWHM) SLD bandwidth and its output serves as an IFOG light source. The residua... | 08/01/2000 |
| 6034380 | Electroluminescent diode with mode expander A semiconductor electro luminescent diode having a body of a semiconductor material with the body having a pair of spaced opposed end surfaces, side surfaces and top and bottom surfaces. The body includes therein an active layer which extends from one end... | 03/07/2000 |
| 6013539 | Edge emitting led and method of forming the same An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of th... | 01/11/2000 |
| 5981978 | Superluminescent diode and method for manufacturing the same A superluminiscent diode includes: a semiconductor substrate of a first conductivity type lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cla... | 11/09/1999 |
| 5889294 | Edge emitting LED having a selective-area growth optical absorption region An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of th... | 03/30/1999 |
| 5629232 | Method of fabricating semiconductor light emitting devices Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction cap... | 05/13/1997 |
| 5608234 | Semi-insulating edge emitting light emitting diode Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction cap... | 03/04/1997 |
| 5574304 | Superluminescent diode with offset current injection regions A superluminescent diode includes a semiconductor substrate of a first conductivity type. A lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper c... | 11/12/1996 |
| 5556795 | Quantum well superluminescent diode A quantum well is formed in the active region of a superluminescent diode by limiting the active region to a thickness on the order of the carrier deBroglie wavelength. Increased efficiency of recombination of electrons and holes due to the existence of t... | 09/17/1996 |
| 5498883 | Superluminescent edge emitting device with apparent vertical light emission and method of making A superluminescent edge emitting device is fabricated to have apparent vertical light emission. The superluminescent device is comprised of a semiconductor supporting structure having a major surface. A light emitting portion is formed above a first porti... | 03/12/1996 |
| 5357124 | Superluminescent diode with stripe shaped doped region A superluminescent diode (SLD) includes a substrate, a double heterojunction structure including a first conductivity type first cladding layer, an undoped active layer, and a second conductivity type second cladding layer. A second conductivity type firs... | 10/18/1994 |
| 5329134 | Superluminescent diode having a quantum well and cavity length dependent threshold current A quantum well is formed in the active region of a superluminescent diode by limiting the active region to a thickness on the order of the carrier deBroglie wavelength. Increased efficiency of recombination of electrons and holes due to the existence of t... | 07/12/1994 |
| 5324964 | Superluminescent surface light emitting device A superluminescent surface light emitting device comprising a mirror layer (19) formed on a surface of a semiconductor substrate (22). Above the mirror (19) is a light emitting region (16). A second mirror (12) is located in a plane above the light emitti... | 06/28/1994 |
| 5252839 | Superluminescent light-emitting diode with reverse biased absorber A non-lasing edge-emitting LED (30) suitable for precision reflectometry has an absorber region (52) which is reverse-biased via a contact (58) to absorb light by Stark absorption or Franz-Keldysch effect. During operation, the gain region (50) is forward... | 10/12/1993 |
| 5034955 | Superluminescent diode A superluminescent diode has an active layer confined in a channel cut into current blocking layers on a semiconductor substrate. This structure gives a small output beam diameter and high coupling efficiency, even when coupled into single-mode fiber. At ... | 07/23/1991 |
| 5008889 | High-accuracy wavelength stabilization of angled-stripe super luminescent laser diode sources An angled-stripe superluminescent laser diode (SLD) light source emits both coherent and incoherent radiation simultaneously, but the two beams are separated spatially. A method and apparatus for stabilizing the emission wavelength of a broadbent light so... | 04/16/1991 |
| 4958355 | High performance angled stripe superluminescent diode There is provided a super luminescent light emitting device comprising a semiconductor body including a central region and two opposing end regions extending a predetermined distance from the end faces. A gain guiding linear strip of material adjacent to ... | 09/18/1990 |
| 4952019 | Grating-coupled surface-emitting superluminescent device A superluminescent diode has one end coupled to a DBR having a grating and the other end has a reflective coating. A broadlight spectrum is emitted for reduced speckle interference and phase noise when used in applications such as a gyroscope. The diode c... | 08/28/1990 |
| 4901123 | Superluminescent diode According to this invention, a superluminescent diode includes a current injection portion having a current injection electrode formed adjacent to a first end face, a light-absorption portion contiguous with the current injection portion; and a waveguide ... | 02/13/1990 |
| 4896195 | Superluminescent diode A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, wher... | 01/23/1990 |
| 4856014 | Angled stripe superluminescent diode A semiconductor light-emitting device structured similarly to an index-guided laser, but having waveguide channels that are formed at a selected small angle of inclination with respect to a direction normal to cleaved facets formed in the structure. The a... | 08/08/1989 |
| 4843611 | Superluminescent diode and single mode laser A buried heterostructure window device has an elongated layer of gain medium surrounded by a lower index of refraction medium for guiding light along the length of the gain medium. A window and an antireflective layer are deposited on the output end of th... | 06/27/1989 |
| 4821277 | Super-luminescent diode A low coherence light emitting device comprises a semiconductor body with pair of opposed end faces. The device contains a current confining structure which forms an effective optical beam path between the end faces. The current confining structure is inc... | 04/11/1989 |
| 4821276 | Super-luminescent diode A low coherence light-emitting device comprises a semiconductor body with a pair of end faces, The device contains an optical beam path which has an axis of symmetry extending between the end faces. At least one of the end faces is inclined at an angle wh... | 04/11/1989 |
| 4764934 | Superluminescent diode and single mode laser A buried heterostructure window device has an elongated layer of gain medium surrounded by a lower index of refraction medium of guiding light along the length of the gain medium. A window and an antireflective layer are deposited on the output end of the... | 08/16/1988 |
| 4634928 | Superluminescent light-emitting diode and related method A superluminescent light-emitting diode in which the spectral width of the output increases with increasing optical output power, thereby allowing the generation of high optical output powers with a broad frequency spectrum that is desirable for some appl... | 01/06/1987 |
