Quotables
"Everyone acquainted with the subject will recognize it as a conspicuous failure."
Henry Morton, president of the Stevens Institute of Technology ; Said in 1880 about the light bulb
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7442953 | Wavelength selective photonics device A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons... | 10/28/2008 |
| 7220613 | Manufacturing method for semiconductor device The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation ch... | 05/22/2007 |
| 5920078 | Optoelectronic device using indirect-bandgap semiconductor material This invention relates to the field of semiconductor devices. Silicon-based semiconductor devices ordinarily lack desirable optical properties because silicon's small, indirect band gap causes electrons to emit radiation with negligible quantum efficiency... | 07/06/1999 |
| 4999682 | Electronic and optoelectronic laser devices utilizing light hole properties Improved p-channel FETs and optoelectronic device make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-typ... | 03/12/1991 |
| 4905059 | Modulation doped radiation emitting semiconductor device A radiation-emitting semiconductor device (i.e. an LED or laser) emits radiation produced by radiative recombination of electrons from a field induced two-dimensional (2-d) electron gas with holes from a field induced two-dimensional (2-d) hole gas. The d... | 02/27/1990 |
| 4899201 | Electronic and optoelectric devices utilizing light hole properties Improved p-channel FETs and optoelectronic devices make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-ty... | 02/06/1990 |
| 4882295 | Method of making a double injection field effect transistor Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of... | 11/21/1989 |
| 4845535 | Light emitting semiconductor device The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emittter region and ba... | 07/04/1989 |
| 4800415 | Bipolar inversion channel device A new solid state field effect bipolar device provides for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional bipolar and field effect devices. The device typically compr... | 01/24/1989 |
| 4408330 | Field effect semiconductor laser, method of modulation thereof A field effect semiconductor laser has two clad layers and an active layer therebetween, formed by an epitaxial growth on a semiconductor substrate, which is mesa-etched to form a stripe-shaped mesa part of a double heterostructure on the semiconductor su... | 10/04/1983 |
| 3978507 | Electroluminescent device having localized emission An electroluminescent semiconductor device having localized emission. The device comprises a p-n diode of which a region is covered with a dielectric layer which itself is covered partly by an electrode polarized with respect to the said region to establish an... | 08/31/1976 |
