Class 257/E33.052 - Having MIS barrier layer (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.044. This subclass
No. of patents: 22
Last issue date: 09/12/2006

Number	Title	Issue Date
7105860	Flip chip light-emitting diode package A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are di...	09/12/2006
5952680	Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications An array of light emitting diodes (LEDs) for the generation of light at multiple wavelengths. The LEDs are realized in a layered structure of semiconductor films grown on one substrate, said array comprising conducting portions for applying a bias to said...	09/14/1999
5851904	Method of manufacturing microcrystalline layers and their utilization The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a firs...	12/22/1998
5616937	Compound semiconductor luminescent device A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a cu...	04/01/1997
5408120	Light-emitting device of gallium nitride compound semiconductor A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n+ layer and a second electrode ...	04/18/1995
5373172	Semiconducting diamond light-emitting element A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed o...	12/13/1994
5273933	Vapor phase growth method of forming film in process of manufacturing semiconductor device In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH3)3 SiN3 is used as raw material for nitrogen. The films...	12/28/1993
5272108	Method of manufacturing gallium nitride semiconductor light-emitting device A gallium nitride semiconductor light-emitting device comprising: a substrate of semiconductor or insulator; an N layer of n-type gallium nitride semiconductor (Al×Ga1-x N:0ࣘ×ࣘ1); an I layer of semiinsulating gallium nitride semiconductor...	12/21/1993
5247193	Semiconductor insulated gate device with four electrodes A semiconductor device serving as a semiconductor light-emitting element, a semiconductor light-receiving element, or a transistor, includes a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a secon...	09/21/1993
5103269	Electroluminescent device of compound semiconductor comprising ZnS or ZnS and ZnSe An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition d...	04/07/1992
5055363	Electroluminescent device of compound semiconductor The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for ...	10/08/1991
5037709	Electroluminescent device of compound semiconductor The present invention provides an electroluminescent device of Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for in...	08/06/1991
4988579	Electroluminescent device of compound semiconductor The present invention provides an electroluminescent device of Group II-14 VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for...	01/29/1991
4975750	Semiconductor device A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region...	12/04/1990
4916496	ZnS blue light emitting device An improved ZnS blue light emitting device is formed with a low-resistivity ZnS layer serving as a luminescent layer, a high-resistivity insulating layer of multi-layer structure for hole carrying injection above the low-resistivity ZnS layer and an elect...	04/10/1990
4855249	Process for growing III-V compound semiconductors on sapphire using a buffer layer In organometallic vapor phase hetero-epitaxial processes for growing Alx Ga1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low tempe...	08/08/1989
4757364	Light emitting element A light emitting element formed of a metal-insulator-semiconductor junction, the improvement wherein the insulator is a Langmuir-Blodgett film of an organic substance containing at least one of a synthetic protein and a natural protein. According to the e...	07/12/1988
4508610	Method for making thin film electroluminescent rare earth activated zinc sulfide phosphors A method of coactivating a rare earth activated, electroluminescent zinc sulfide film with activator gas is described. The phosphor film is deposited upon a substrate by co-sputtering from a zinc sulfide target and a rare earth target in an atmosphere suc...	04/02/1985
4197552	Luminescent semiconductor devices Luminescent semiconductor device having a wide-gap semiconductor material substrate (e.g., ZnS), a thin (.ltorsim.100A thick) alkali halide insulating layer (e.g., NaI, KI, LiI) in the substrate and a metal layer on the insulating layer such that the insu...	04/08/1980
4194141	Electroluminescent unit Electroluminescent device for emitting green light comprising a conducting cadmium fluoride crystal of electron concentration greater than 1015 cm-3 having a manganese impurity of NMn concentration in the range: 0.1 mole p...	03/18/1980
4062035	Luminescent diode A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrod...	12/06/1977
3978507	Electroluminescent device having localized emission An electroluminescent semiconductor device having localized emission. The device comprises a p-n diode of which a region is covered with a dielectric layer which itself is covered partly by an electrode polarized with respect to the said region to establish an...	08/31/1976

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/E33.052 - Having MIS barrier layer (EPO)