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An aircraft having vertical takeoff and landing capability provided with at least first and second laterally extending paddle wheels rotatable on a central axis perpendicular to the longitudinal axis of the aircraft fuselage and between its nose and tail.
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| Number | Title | Issue Date |
| 7244997 | Magneto-luminescent transducer An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor hav... | 07/17/2007 |
| 7238976 | Schottky barrier rectifier and method of manufacturing the same A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second do... | 07/03/2007 |
| 7141464 | Method of fabricating T-type gate Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the sec... | 11/28/2006 |
| 6486500 | Led structure having a schottky contact and manufacturing method A structure and manufacturing method of LED is disclosed. The manufacturing method of the structure of LED comprises: providing a substrate; on the substrate, forming in sequence a buffer layer, a first confining layer, an active layer, a second confining... | 11/26/2002 |
| 6288415 | Optoelectronic semiconductor devices An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (ଲ-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 μm. Ph... | 09/11/2001 |
| 5994720 | Indirect bandgap semiconductor optoelectronic device An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n+ region (16) embedded at the surface of an oppositely ... | 11/30/1999 |
| 5952680 | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications An array of light emitting diodes (LEDs) for the generation of light at multiple wavelengths. The LEDs are realized in a layered structure of semiconductor films grown on one substrate, said array comprising conducting portions for applying a bias to said... | 09/14/1999 |
| 5851904 | Method of manufacturing microcrystalline layers and their utilization The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a firs... | 12/22/1998 |
| 5541423 | Monocrystalline diamond semiconductor device and several electronic components employing same A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamo... | 07/30/1996 |
| 5373172 | Semiconducting diamond light-emitting element A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed o... | 12/13/1994 |
| 5151383 | Method for producing high energy electroluminescent devices A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a ... | 09/29/1992 |
| 5107311 | Semiconductor light-emitting device A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasin... | 04/21/1992 |
| 4982243 | Schottky contact A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface whic... | 01/01/1991 |
| 4893154 | Electroluminescent device An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the sup... | 01/09/1990 |
| 4819057 | Semiconductor light-emitting element A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer, and an organic Langmuir-Blodgett thin film formed on the semiconductor layer. The thin film includes an electron donative organic mo... | 04/04/1989 |
| 4645932 | Diodes with chemically sensitive luminescence The presence of certain chemicals on the emitting surface of the palladium coated photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the ... | 02/24/1987 |
| 4069492 | Electroluminescent semiconductor device having a body of amorphous silicon A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device.... | 01/17/1978 |
