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| Number | Title | Issue Date |
| 7115217 | Phosphor for light sources and associated light source A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga,... | 10/03/2006 |
| 6831307 | Semiconductor mounting system An object of the present invention is to provide a novel semiconductor mounting system having a semiconductor mounting member, a metal member and a joining layer joining the mounting and metal members, to improve the flatness of a mounting surface and to control the... | 12/14/2004 |
| 5371409 | Wide bandgap semiconductor light emitters Type-II semiconductor heterojunction light emitting devices formed on a substrate are described wherein a graded injection layer is used to accelerate electrons over the electron barrier formed by the junction. Further, wide band gap semiconductor LEDs an... | 12/06/1994 |
| 4868615 | Semiconductor light emitting device using group I and group VII dopants A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnSx Se1-x crystal layer (0ࣘxࣘ1) formed on the substrate and containing a Group VII element as a donor impurity, and... | 09/19/1989 |
| 4171996 | Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a ... | 10/23/1979 |
| 4122407 | Heterostructure junction light emitting or responding or modulating devices Practice of this disclosure reduces the concentration of intrinsic defects heretofore grown into semiconducting materials. Thereby, the operational lifetime is increased of heterostructure junction light emitting or responding or modulating devices which ... | 10/24/1978 |
| 4117504 | Heterogeneous semiconductor structure with composition gradient and method for producing same A heterogeneous semiconductor structure with a composition gradient is used to produce lasers, spectrometers and pressure gauges and comprises a substrate, a transition layer and a main layer in the form of a doped solid solution of ABx C1... | 09/26/1978 |
