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Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 7394114 | Semiconductor device and manufacturing method therefor A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserte... | 07/01/2008 |
| 7331566 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride se... | 02/19/2008 |
| 7247889 | III-nitride material structures including silicon substrates III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) for... | 07/24/2007 |
| 7235816 | Semiconductor light emitter A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier la... | 06/26/2007 |
| 7180147 | Microelectronic structure with a high germanium concentration silicon germanium alloy including a graded buffer layer A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one ... | 02/20/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 6695913 | III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a ... | 02/24/2004 |
| 6664571 | Surface-emitting diode radiation source Surface-emitting diode emission source (1) with an active layer (10) used to create optical emissions (101, 102, 103) that is located between a confinement layer (11) consisting of semi-conductor material of a conductivity type (n) and a confinement layer... | 12/16/2003 |
| 6653163 | Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge car... | 11/25/2003 |
| 6469323 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 10/22/2002 |
| 6384430 | Light emitting diode A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity typ... | 05/07/2002 |
| 6265726 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3 Ga1-x3) | 07/24/2001 |
| 6265732 | Light emitting diode A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity typ... | 07/24/2001 |
| 6215133 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 04/10/2001 |
| 6191431 | Device for emitting electromagnetic radiation at a predetermined wavelength A device for emitting radiation it a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge car... | 02/20/2001 |
| 6120600 | Double heterojunction light emitting diode with gallium nitride active layer A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between t... | 09/19/2000 |
| 6078063 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 06/20/2000 |
| 6072189 | III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a ... | 06/06/2000 |
| 6005258 | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3 Ga1-x3) | 12/21/1999 |
| 5994723 | Semiconductor element and its method of manufacturing An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconduc... | 11/30/1999 |
| 5880486 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 03/09/1999 |
| 5808324 | Light emitting device A light emitting device with higher luminance than that of a conventional light emitting device is provided. According to the present invention, a light emitting device comprises owing three layers of: a first cladding layer made of a p-type mixed crystal... | 09/15/1998 |
| 5789772 | Semi-insulating surface light emitting devices Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction cap... | 08/04/1998 |
| 5739554 | Double heterojunction light emitting diode with gallium nitride active layer A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between t... | 04/14/1998 |
| 5679963 | Semiconductor tunnel junction with enhancement layer The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling prope... | 10/21/1997 |
| 5665984 | Light-emitting diode A light-emitting diode comprises a first layer of Si-doped N-type Ga1-x Alx As, a second layer of Si-doped P-type Ga1-y Aly As and a third layer of P-type Ga1-z Alz As, in that order, in wh... | 09/09/1997 |
| 5629232 | Method of fabricating semiconductor light emitting devices Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction cap... | 05/13/1997 |
| 5608234 | Semi-insulating edge emitting light emitting diode Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction cap... | 03/04/1997 |
| 5583349 | Full color light emitting diode display A full color light emitting diode display (310) utilizes semiconductor light emitting diodes (313) to produce red light and organic light emitting diodes (312) to produce blue light. Green light is produced by either semiconductor light emitting diodes (3... | 12/10/1996 |
| 5583350 | Full color light emitting diode display assembly A full color light emitting diode display (310) utilizes semiconductor light emitting diodes (313) to produce red light and either organic or semiconductor light emitting diodes (312) to produce blue light. Green light is produced by either semiconductor ... | 12/10/1996 |
| 5578839 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 11/26/1996 |
| 5550393 | Semiconductor layer structure having distributed strain and optical semiconductor device including such strained layer A semiconductor layer structure comprises a first semiconductor layer, and a second semiconductor layer adjacent the first layer at a boundary. The first semiconductor layer has a uniform lattice constant in its layering direction. The second semiconducto... | 08/27/1996 |
| 5483547 | Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature A Type II heterojunction formed of semiconductor material which normally forms a Type I heterojunction. The Type II heterojunction is created by using a carefully chosen stack of epitaxial semiconductor materials with modifications to the band structure t... | 01/09/1996 |
| 5440384 | Methods of inspecting wafers for manufacturing light emitting elements An irradiation light containing a light which wave length is not absorbed by the n-type clad layer, but is absorbed by the p-type active layer, is applied on the wafer for manufacturing light emitting elements with a double-hetero structure of a p-type cl... | 08/08/1995 |
| 5432359 | Light emitting device with AlAs mixed crystal ratios A semiconductor light-emitting device and a manufacturing method therefor by which deterioration of external output is sufficiently suppressed under the high temperature and moisture so as to significantly improve pellet yield. A light emitting device of ... | 07/11/1995 |
| 5401684 | Method of manufacturing a light-emitting semiconductor device substrate Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga1-x Alx As compound semiconductor single crystalline thick-film layer having a first AlAs ... | 03/28/1995 |
| 5387804 | Light emitting diode A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride... | 02/07/1995 |
| 5386139 | Semiconductor light emitting element with improved structure of groove therein A semiconductor light emitting element in which light leakage from the vicinity of an active layer end thereof is significantly reduced, and an interval at which the element is disposed is sufficiently narrow, so that there can be realized an optimal dist... | 01/31/1995 |
| 5359209 | Efficient light emitting diodes with modified window layers A light emitting diode includes a first conductivity type semiconductor substrate, a basic AlGaInP double heterostructure and two window layers of second conductivity type semiconductor. A layer of first conductivity type AlGaInP an undoped AlGaInP layer ... | 10/25/1994 |
| 5349597 | Semiconductor laser device and production method therefor A semiconductor laser device includes a Zn-doped p type semiconductor substrate in which more than 81% of Zn dopant atoms are activated to produce carriers, and semiconductor layers epitaxially grown on the Zn-doped p type semiconductor substrate, includi... | 09/20/1994 |
