Class 257/E33.048 - Having heterojunction or graded gap (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.044. This subclass
No. of patents: 29
Last issue date: 03/25/2008

Number	Title	Issue Date
7348602	Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan...	03/25/2008
5834378	Passivation of porous semiconductors for improved optoelectronic device performance and fabrication of light-emitting diode bases on same A method for substantially improving the photo luminescent performance of a porous semiconductor, involving the steps of providing a bulk semiconductor substrate wafer of a given conductivity, wherein the substrate wafer has a porous semiconductor layer o...	11/10/1998
5656828	Electronic component with a semiconductor composite structure The invention relates to a semiconductor composite structure for an electronic component. The semiconductor composite structure comprises a diamond layer, which is substantially undoped except for unavoidable impurities, one side of which is covered by a ...	08/12/1997
5646419	n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same. In a preferred embodiment, a p-type gallium nitride substrate is used. A first layer, such as a magnesium zinc sulfid...	07/08/1997
5500389	Process for formation for hetero junction structured film utilizing V grooves A process for formation of a hetero junction structured film utilizing V grooves is disclosed. A monocrystalline film 1 is etched into V grooves, and thereupon, a hetero film 2 having misfits is grown, so that dislocations would be intensively distributed...	03/19/1996
5476812	Semiconductor heterojunction structure A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor,...	12/19/1995
5382812	Diamond and II-VI heterojunction semiconductor light emitting device A light emitting semiconductor heterojunction includes a first layer of n-type semiconducting material comprising a Group II-VI material, and a second layer of p-type semiconducting diamond on the first layer. Preferably the Group II-VI material includes ...	01/17/1995
5334855	Diamond/phosphor polycrystalline led and display A light emitting diode including a carrier injection layer of semiconductor material, such as diamond, and a light emitting layer of polycrystalline phosphor, such as zinc oxide, positioned to form a diode junction therebetween. The semiconductor material...	08/02/1994
5272355	Optoelectronic switching and display device with porous silicon A solid state optoelectronic switching and display device and a method for its manufacture are disclosed. The device, formed in silicon, essentially is a surface-emitting visible light-emitting diode that allows rapid and efficient switching and informati...	12/21/1993
5228044	Ultraviolet semiconductor laser and method of manufacturing the same A BN layer having a zinc blend type crystal structure and a BeCN2 layer having a chalcopyrite type crystal structure are stacked on a substrate via a BP buffer layer, thereby constituting a heterojunction. This heterojunction is used to form an...	07/13/1993
5151756	Surface emitting heterojunction light emitting diode A surface emitting LED has a PN junction between two semiconductor layers, at least one layer being an active layer. The diode is adapted for emitting light through an exit surface. Between the active layer and the exit surface the diode has a luminescenc...	09/29/1992
5117267	Semiconductor heterojunction structure A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor,...	05/26/1992
5097298	Blue light emitting display element A blue light emitting display element has a hetero p-n junction type light emitting layer formed between a semiconductor layer of a II-VI or III-V semiconducting compound having a wide energy bandgap and a highly electroconductive amorphous silicon type s...	03/17/1992
5091758	Semiconductor light-emitting devices Light-emitting semiconductor devices comprising a substrate and a p-n junction structure formed on the substrate are described. The p-n junction structure is made of a combination of a wide gap semiconductor layer made of a p-type chalcopyrite semiconduct...	02/25/1992
5008891	Semiconductor light-emitting devices Configurations of heterostructure semiconductor lasers and LEDs are desribed which enable emission wavelengths in the blue to ultra-violet region to be achieved. The structures are based on an n-type layer formed of a (ZnCd) (SSe) II-VI semiconductor and ...	04/16/1991
4984034	Non-single-crystalline light emitting semiconductor device matrix with insulation A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	01/08/1991
4940898	Semiconducting metal silicide radiation detectors Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed e...	07/10/1990
4914042	Forming a transition metal silicide radiation detector and source Transition metal silicide semiconductor electromagnetic radiation source and detectors have a thin film of semiconducting silicide grown or deposited on a silicon wafer. The transition metals are chosen from a group consisting of iron, iridium, manganese,...	04/03/1990
4868614	Light emitting semiconductor device matrix with non-single-crystalline semiconductor A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	09/19/1989
4782377	Semiconducting metal silicide radiation detectors and source Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhe...	11/01/1988
4665421	Photodiode comprising a resonator structure for increasing absorption A photodiode having optical resonators tuned different from one another and adjacent one another in a semiconductor body, whereby the resonators are in optical wave-coupling with one another....	05/12/1987
4527179	Non-single-crystal light emitting semiconductor device A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	07/02/1985
4439399	Quaternary alloy A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions....	03/27/1984
4429395	Semiconductor laser A semiconductor laser includes a body having parallel end faces and a substrate having a ridge in a major surface thereof which extends between the end surfaces, an active layer overlying the ridge and which tapers in thickness from that portion of the ac...	01/31/1984
4302763	Semiconductor device A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity ...	11/24/1981
4171996	Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a ...	10/23/1979
4158849	Heterojunction semiconductor device A layer of germanium on a body of P type conductivity single crystal indium phosphide provides a blocking heterojunction. This device will emit light when a suitable voltage is placed thereacross or the device can be used as a photoconductor to generate e...	06/19/1979
4117504	Heterogeneous semiconductor structure with composition gradient and method for producing same A heterogeneous semiconductor structure with a composition gradient is used to produce lasers, spectrometers and pressure gauges and comprises a substrate, a transition layer and a main layer in the form of a doped solid solution of ABx C1...	09/26/1978

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Class 257/E33.048 - Having heterojunction or graded gap (EPO)