Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 7385225 | Surface emitting type device, and method for manufacturing the same A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second semiconductor layer of a first conductivity type formed above the rectificati... | 06/10/2008 |
| 6614055 | Surface light-emitting element and self-scanning type light-emitting device A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center ... | 09/02/2003 |
| 6472718 | Semiconductor device A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconduct... | 10/29/2002 |
| 6465270 | Process for producing a semiconductor device A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconduct... | 10/15/2002 |
| 6339233 | Metal clad ridge waveguide ("MCRW") laser semiconductor structure with doped semiconductor substrate A semiconductor device comprises an electrically conductive III-V semiconductor substrate which has mutually opposite first and second main surfaces. At least one pn junction, reverse biased during operation of the semiconductor device, is disposed above ... | 01/15/2002 |
| 6180960 | Surface light-emitting element and self-scanning type light-emitting device A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center ... | 01/30/2001 |
| 5994723 | Semiconductor element and its method of manufacturing An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconduc... | 11/30/1999 |
| 5892787 | N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a r... | 04/06/1999 |
| 5679963 | Semiconductor tunnel junction with enhancement layer The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling prope... | 10/21/1997 |
| 5677551 | Semiconductor optical device and an optical processing system that uses such a semiconductor optical system A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated... | 10/14/1997 |
| 5652439 | Fast electrical complete turn-off optical device The invention relates generally to optoelectronic pnpn devices and more particularly to a layer structure suitable for fast electrical complete turn-off of such devices and to a method for efficient and fast operation of such devices and differential pair... | 07/29/1997 |
| 5625201 | Multiwavelength LED devices and methods of fabrication A multiwavelength LED device including a first LED constructed to emit light of a first wavelength and a second LED constructed to emit light of a second wavelength, different than the first wavelength. The first and second LEDs are stacked vertically on ... | 04/29/1997 |
| 5391896 | Monolithic multi-color light emission/detection device A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first j... | 02/21/1995 |
| 5349599 | Bistable optical laser based on a heterostructure PNPN thyristor A semiconductor apparatus for propagating light in a preferred direction which comprises, in succession, a substrate, a first emitter region, a first carrier confinement region, a first internal heterojunction barrier, a first base region, a second base r... | 09/20/1994 |
| 5340998 | Semiconductor surface light emitting and receiving heterojunction device A surface-normal optoelectronic device is provided which includes a first semiconductor layer of a first electroconductive type, a second semiconductor layer of a second electroconductive type having a polarity inverse to that of the first electroconducti... | 08/23/1994 |
| 5289018 | Light emitting device utilizing cavity quantum electrodynamics A light emitting device includes a light emitting active layer, electrodes to supply carriers to the active layer and a resonator enclosing the active layer with high reflectance for light radiated in the active layer. An electrode may be used to apply an... | 02/22/1994 |
| 5229627 | Vertical cavity type vertical to surface transmission electrophotonic device A VC-VSTEP has a pnpn structure, and comprises first and second mirror structures, and an intermediate structure provided between the first and second mirror structures. The intermediate structure comprises an active and light absorption layer of multi-qu... | 07/20/1993 |
| 5204871 | Bistable optical laser based on a heterostructure pnpn thyristor A semiconductor apparatus for propagating light in a preferred direction which comprises, in succession, a substrate, a first emitter region, a first carrier confinement region, a first internal heterojunction barrier, a first base region, a second base r... | 04/20/1993 |
| 5166761 | Tunnel junction multiple wavelength light-emitting diodes A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p... | 11/24/1992 |
| 5153758 | Driving method and apparatus for a pnpn semiconductor device A driving method for a pnpn semiconductor device includes the steps of applying a voltage higher than a holding voltage of the pnpn semiconductor device to an anode electrode thereof, supplying a control signal light to the pnpn semiconductor device to se... | 10/06/1992 |
| 5136353 | Optical switch The present invention relates to an optical switch which will generate and emit a beam of light when an optical signal is directed therein, but includes means to inhibit the generation of the beam of light when a second optical signal is directed therein.... | 08/04/1992 |
| 5093875 | Optical interconnection apparatus A matrix of optical functional devices are divided into plural device units. Each of the device units includes at least two optical functional devices having light transmitting coatings. The coatings have transmission factors which are different from each... | 03/03/1992 |
| 4979002 | Optical photodiode switch array with zener diode An optical switching array includes a body of a semiconductor material having opposed surfaces. A plurality of spaced bodies of a semiconductor material are on one of the surfaces of the substrate. Each body includes four superimposed regions extending th... | 12/18/1990 |
| 4977433 | Optoelectronic semiconductor device An optoelectronic device having an optical switch which can be turned on and off optically by a beam of light. The device includes the optical switch having a first optically variable resistance device connected in series with the switch and one side of a... | 12/11/1990 |
| 4864168 | Process for controlling an optical pnpn thyristor to be driven A process for controlling an optical pnpn thyristor to be driven comprises a step of applying a train of pulses to maintain a low impedance state of an optical pnpn thyristor which is shifted beforehand to be in the low impedance state by a positive set p... | 09/05/1989 |
| 4606032 | Astable optical multi-vibrator Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, b... | 08/12/1986 |
| 4605942 | Multiple wavelength light emitting devices Presented is a dual wavelength structure wherein two edge-emitting devices are bonded with p-regions adjacent. The bonding medium is a conductive compound that forms a common electrode between the devices. Each device is separately addressable. Efficient ... | 08/12/1986 |
| 4577207 | Dual wavelength optical source A dual wavelength optical source includes a monolithic integrated pair of series-opposition connected diodes, each fabricated for emitting light having a different wavelength than the other. Polarity of a common bias current conducted through the diodes i... | 03/18/1986 |
| 4555785 | Optical repeater integrated lasers Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, b... | 11/26/1985 |
| 4485391 | Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems A phototransistor which is capable of operating alternately in the emission mode and in the reception mode can be coupled under favorable conditions to an optical fiber in a telecommunications system. An active layer constitutes the base of the transistor... | 11/27/1984 |
| 4473834 | Light emitting transistor array A light emitting bipolar transistor, adapted to produce light from cathodoluminescence, upon being biased into conduction, the light emitting bipolar transistor being formed on the top surface of a relatively flat semiconductor substrate and having active... | 09/25/1984 |
| 4450567 | Optical repeater integrated lasers Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, b... | 05/22/1984 |
| 4374390 | Dual-wavelength light-emitting diode A dual-wavelength light-emitting diode (10) is disclosed wherein at least two quaternary layers (102 and 104) are epitaxially grown on indium phosphide substrate (100) and a top indium phosphide layer (105) of the opposite conductivity type is grown to es... | 02/15/1983 |
| 4316156 | Optical repeater integrated lasers Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, b... | 02/16/1982 |
| 4065729 | Monolithic PNPN injection laser optical repeater A monolithic PNPN injection laser diode operating as an optical repeater is comprised of a direct band-gap semiconductor material, such as essentially GaAs, epitaxially grown in five layers with the first, third and fifth layers of GaAsAl and the second a... | 12/27/1977 |
