Class 257/E33.046 - P-I-N device (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.045. This subclass
No. of patents: 23
Last issue date: 07/17/2007

Number	Title	Issue Date
7244997	Magneto-luminescent transducer An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor hav...	07/17/2007
7217956	Light active sheet material Device structures for sheets of light active material. A first substrate has a transparent first conductive layer. A pattern of light active semiconductor elements are fixed to the first substrate. The light active semiconductor elements have an n-side and a p-side....	05/15/2007
7180147	Microelectronic structure with a high germanium concentration silicon germanium alloy including a graded buffer layer A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one ...	02/20/2007
6445127	Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same A gallium-nitride-group compound-semiconductor light-emitting device having an improved luminous intensity that makes it more suitable for use in the full-color outdoor display of an advanced performance. A gallium-nitride-group compound-semiconductor lig...	09/03/2002
6177690	Semiconductor light emitting device having a p-n or p-i-n junction A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently ...	01/23/2001
5872016	Process of making an optoelectronic devices utilizing multiple quantum well pin structures Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n struc...	02/16/1999
5373167	Opto-electronic device An opto-electronic device with the physical and chemical characteristics at the junction thereof being well matched is disclosed. The opto-etectronic device includes a wafer, a first layer grown on the wafer, and a second layer grown on the first layer, w...	12/13/1994
5354707	Method of making semiconductor quantum dot light emitting/detecting devices A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second dop...	10/11/1994
5293050	Semiconductor quantum dot light emitting/detecting devices A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second dop...	03/08/1994
5210766	Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors Scanning laser crystallization of p- and n- type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. Th...	05/11/1993
5162239	Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors Scanning laser crystallization of p- and n-type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. The...	11/10/1992
5151383	Method for producing high energy electroluminescent devices A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a ...	09/29/1992
5130762	Integrated quantum well feedback structure An integrated semiconductor device comprising a light emitting portion and a light detecting portion is disclosed. The integrated semiconductor device comprises two multiple quantum well P-I-N structures formed on a single substrate, one of the P-I-N stru...	07/14/1992
5105236	Heterojunction light-emitting diode array A light-emitting diode array is fabricated by forming a light-emitting diode heterojunction at the interface between a superlattice layer comprised of alternations of a multiplicity of semiconductor layers that have different energy gaps, and a doped diff...	04/14/1992
5055893	Light-emitting diode array with reflective layer A light-emitting diode array has an active layer on a surface of a substrate and a multiple reflective layer between the substrate and the active layer. The active layer is of a semiconductor material which emits light when subjected to carrier injection....	10/08/1991
4987460	Light emitting device A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected elec...	01/22/1991
4980553	Radiological image detector A radiological image detector of the type formed by a matrix of photosensitive elements, associated with a light source, enables a resetting of the voltages at the terminals of the photosensitive elements, the light source and the photosensitive matrix be...	12/25/1990
4920387	Light emitting device A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the lumin...	04/24/1990
4914490	Non-single crystal electroluminescent device A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms laminated and having a homojunction, and at least a pair of electrodes connected elec...	04/03/1990
4695859	Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits A light emitting, thin film p-i-n diode characterized by aligned valence bands at the p-i interface and aligned conduction bands at the n-i interface and preferably including a layer of p-doped microcrystalline semiconductor alloy material. A photonic cir...	09/22/1987
4069492	Electroluminescent semiconductor device having a body of amorphous silicon A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device....	01/17/1978
4045257	III(A)-(VB) Type luminescent diode Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of ࣘ 10-10 seconds, which permit an extension to higher fre...	08/30/1977
3999206	Semiconductor indicating device and method for production of same A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 μm, the concentration of neutral atoms in the n-region is from 1.5×1018 to 5×1018 cm-.sup.3 an...	12/21/1976

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Class 257/E33.046 - P-I-N device (EPO)