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| Number | Title | Issue Date |
| 7442972 | Semiconductor device and inspection method thereof A semiconductor device is disclosed. The device has a photodiode isolated by element isolating regions (Ia, 14a, 14b) characterized by the following facts: on the principal surface of first semiconductor layer 11 of the first elect... | 10/28/2008 |
| 6316792 | Compound semiconductor light emitter and a method for manufacturing the same A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A f... | 11/13/2001 |
| 6288415 | Optoelectronic semiconductor devices An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (ଲ-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 μm. Ph... | 09/11/2001 |
| 6271051 | Light-emitting diode, light-emitting diode array, and method of their fabrication A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a larg... | 08/07/2001 |
| 6211537 | LED array A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in ... | 04/03/2001 |
| 6144043 | Light emitting semiconductor device having plural light emitting elements with different junction depth A light emitting semiconductor device in which LEDs for emitting light different in wavelength from one another are densely integrated. First to fifth semiconductor layers are AlGaAs layers being different in Al composition ratio, and when it is assumed t... | 11/07/2000 |
| 6136627 | High-resolution light-sensing and light-emitting diode array and fabrication method thereof A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/24/2000 |
| 6133588 | Light-emitting element array and fabrication method with separate light-emitting and current-conducting diffusion areas A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An add... | 10/17/2000 |
| 6111271 | Optoelectronic device with separately controllable carrier injection means An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n+ region (16) embedded at the surface of an oppositely ... | 08/29/2000 |
| 6078061 | Light emitting diode with patterned electrode The opening portion as the pattern shift detecting portion is formed in the insulating layer so that an edge of the electrode pattern extends to the opening portion when the electrode pattern shifts and the contact resistivity between the light emitting p... | 06/20/2000 |
| 6064418 | Led array, print head, and electrophotographic printer In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is ... | 05/16/2000 |
| 6063644 | Light-emitting element and array with etched surface, and fabrication method thereof A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes c... | 05/16/2000 |
| 6054724 | Light-emitting diode, light-emitting diode array A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a larg... | 04/25/2000 |
| 5994720 | Indirect bandgap semiconductor optoelectronic device An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n+ region (16) embedded at the surface of an oppositely ... | 11/30/1999 |
| 5977566 | Compound semiconductor light emitter A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A f... | 11/02/1999 |
| 5972729 | Method of manufacturing light-receiving/emitting diode array chip A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity... | 10/26/1999 |
| 5955748 | End face light emitting type light emitting diode An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged... | 09/21/1999 |
| 5917227 | Light-emitting-diode array and light-emitting-diode element A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-dope... | 06/29/1999 |
| 5869848 | End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermin... | 02/09/1999 |
| 5866439 | Method of fabricating an end face light emitting type light-emitting diode and a light-emitting diode array device In a fabricating method for an end face light emitting type LED array, p-type regions are formed by diffusing impurities into portions of a semiconductor substrate, using a diffusion prevention film as a mask. Subsequently, using the diffusion prevention ... | 02/02/1999 |
| 5763906 | Mid infrared light emitting diode A mid-infrared emitting diode with a substrate which is transparent to radiation produced by the device by virtue of the Moss-Burstein shift which is induced in the substrate by heavy doping. Emission from the device takes place via said substrate with a ... | 06/09/1998 |
| 5700714 | Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusio... | 12/23/1997 |
| 5610412 | Semiconductor light emitting device with depletion layer A semiconductor device having superior light output efficiency is disclosed. A p-Si diffusion layer is formed on a Si substrate and an n-Si diffusion layer is formed in the p-Si diffusion layer. An n-GaAs layer constituting an active region for emitting l... | 03/11/1997 |
| 5600157 | Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 μm, for adequate sensitivity, and an impurity concentration of at least 5×1020 atoms/cm-3, for a... | 02/04/1997 |
| 5561679 | Radioluminescent semiconductor light source A radioluminescent light source comprising a crystalline III-V or II-VI semiconductor or a group IV quantum semiconductor and a radioactive element adapted to cause the semiconductor to produce light is disclosed. The radioactive element, such as tritium,... | 10/01/1996 |
| 5525539 | Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 06/11/1996 |
| 5466303 | Semiconductor device and manufacturing method therefor A semiconductor device, which can easily form hyper abrupt junction type junction having a desired depletion layer width or transition region width, is disclosed. A silicon oxide film is formed on the mirror polished side surface of a P-type semiconductor... | 11/14/1995 |
| 5448082 | Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 09/05/1995 |
| 5382813 | Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers A light emission diode comprises a semiconductor substrate and a pn junction structure including an n-type ZnS compound semiconductor layer and a p-type ZnS compound semiconductor layer, Al being present in at least one of the semiconductor layers. By thi... | 01/17/1995 |
| 5338944 | Blue light-emitting diode with degenerate junction structure A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a li... | 08/16/1994 |
| 5315272 | Light emitting tunnel diode oscillator A light emitting tunnel diode oscillator comprising a body of single crystalline material having a first portion n-doped and a second portion p-doped in such a way that the resulting p-n junction has the low voltage conductance characteristics of a tunnel... | 05/24/1994 |
| 5313078 | Multi-layer silicon carbide light emitting diode having a PN junction This invention is a multi-layer pn type silicon carbide light emitting diode. A first n-type silicon carbide layer is deposited on an n-type substrate. The first n-type silicon carbide layer has an electron concentration larger than 1×1015 cm | 05/17/1994 |
| 5291037 | Light-emitting device A light-emitting device in which the increase in the intensity of the emitted light is linear with respect to the increase in current, thereby facilitating current-based control of the light intensity. In the device, this is achieved by providing a high-r... | 03/01/1994 |
| 5284781 | Method of forming light emitting diode by LPE A liquid phase epitaxial (LPE) melt is formed to be oversaturated with gallium arsenide, and to have a first temperature. A surface of a gallium arsenide substrate is converted to a first P-type layer (12). Subsequently, the first P-type layer (12) and th... | 02/08/1994 |
| 5274252 | Linearizing emitted light intensity from a light-emitting device A light-emitting device in which at low current levels the increase in light intensity is linear with respect to the increase in current, thereby facilitating control of the light intensity includes a first semiconductor layer in which the semiconductor i... | 12/28/1993 |
| 5258630 | Light-emitting diode with non-reflective diffusion region periphery A light-emitting diode having a structural arrangement that permits efficient external emission of light emitted from the peripheral wraparound portion of the diffusion region.... | 11/02/1993 |
| 5258628 | Linearizing emitted light intensity from a light-emitting device A light-emitting device in which impurity concentrations are varied to cause the increase in the intensity of the emitted light to be linear with respect to the increase in current, thereby facilitating current-based control of the light intensity.... | 11/02/1993 |
| 5218216 | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same A thin film of SiO2 is patterned on an N layer consisting of N-type Alx Ga1-x N (inclusive of x=0). Next, I-type Alx Ga1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grow... | 06/08/1993 |
| 5215929 | Method of manufacturing pn-junction device II-VI compound semiconductor This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting... | 06/01/1993 |
| 5210051 | High efficiency light emitting diodes from bipolar gallium nitride The invention is a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7×1017 cm-3 or less. The method comprises introducing a source of nitrogen into a reaction chamber co... | 05/11/1993 |
