Class 257/E33.044 - Device characterized by their operation (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.001. This subclass
No. of patents: 34
Last issue date: 10/21/2008

Number	Title	Issue Date
7439548	Surface mountable chip A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surfac...	10/21/2008
7361970	Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor...	04/22/2008
7355220	Array substrate An array substrate includes an insulating substrate, pixel circuits arranged in a matrix on the insulating substrate, and video signal lines arranged correspondently with columns which the pixel circuits form. Each pixel circuit includes a drive transistor whose sou...	04/08/2008
6111274	Inorganic light emitting diode An object of the invention is to provide a light emitting diode which enables relatively easy fabrication of large-area displays and is applicable to thin, long life, low cost, full color displays too. The object is attained by a light emitting diode comp...	08/29/2000
5949182	Light-emitting, nanometer scale, micromachined silicon tips 0504221609 Nanometer-scale field emitter tips are fabricated on a single crystal silicon substrate and an optically active semiconductive material is deposited on the tip. A bias voltage is connected between the semiconductor and the substrate to cause th...	09/07/1999
5561304	Electroluminescent silicon device An electroluminescent silicon device (10) includes a silicon structure (12) which comprises a bulk silicon layer (14) and a porous silicon layer (16). The porous layer (16) has merged pores (20) which define silicon quantum wires (18). The quantum wires (...	10/01/1996
5451977	Self-scanning light-emitting array and a driving method of the array A self-scanning light-emitting element array is disclosed. A coupled array of light-emitting elements is constituted so that a light-emitting element which is turned on influences a light-emitting element to be turned on next so that its threshold level i...	09/19/1995
5414282	Semiconductor optoelectronic switch and method for driving the same The invention provides a heterostructure optoelectronic switching device showing a switch operation in response to a light injection for a subsequent light emission. The switching device comprises a pair of first and second bipolar transistors made of sem...	05/09/1995
5340998	Semiconductor surface light emitting and receiving heterojunction device A surface-normal optoelectronic device is provided which includes a first semiconductor layer of a first electroconductive type, a second semiconductor layer of a second electroconductive type having a polarity inverse to that of the first electroconducti...	08/23/1994
5151756	Surface emitting heterojunction light emitting diode A surface emitting LED has a PN junction between two semiconductor layers, at least one layer being an active layer. The diode is adapted for emitting light through an exit surface. Between the active layer and the exit surface the diode has a luminescenc...	09/29/1992
5138624	Multiwavelength LED and laser diode optical source The invention relates to the design of multiwavelength LED devices having multiple-lobe optical spectrums and laser diode devices with multiple designated wavelengths wherein the devices are formed by stacking various active layers of selected semiconduct...	08/11/1992
5093875	Optical interconnection apparatus A matrix of optical functional devices are divided into plural device units. Each of the device units includes at least two optical functional devices having light transmitting coatings. The coatings have transmission factors which are different from each...	03/03/1992
5031005	Semiconductor device A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of \|Ec3 -Ec1 \|.apprxeq.\|Ev3 -Ev5 \|, where Ec3 is a resonant en...	07/09/1991
4979002	Optical photodiode switch array with zener diode An optical switching array includes a body of a semiconductor material having opposed surfaces. A plurality of spaced bodies of a semiconductor material are on one of the surfaces of the substrate. Each body includes four superimposed regions extending th...	12/18/1990
4972094	Lighting devices with quantum electric/light power converters Lighting devices are described in which the light source comprises a plurality of light emitting structures utilizing the direct conversion of electron energy to photon energy, at high efficiency. Structures are described which will emit color or white li...	11/20/1990
4894832	Wide band gap semiconductor light emitting devices Wide band gap, single conductivity type semiconductor light emitting diodes (LED's) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown, together with separate means for carrier introduction, su...	01/16/1990
4775876	Photon recycling light emitting diode A photon recycling light emitting diode consisting of a stack of direct bandgap semiconductor active layers on a substrate with increasing bandgap energy from the substrate, separated by barrier layers having higher bandgap energy and capped with a window...	10/04/1988
4766471	Thin film electro-optical devices An electro-optical communication device which includes a light transmissive conduit integrally formed to interconnect a light emitter and a light detector. The length over which the light transmissive conduit extends is substantially greater than the size...	08/23/1988
4754141	Modulated infrared source A solid state infrared source is disclosed which is capable of modulation of the intensity of broadband infrared radiation. A silicon semiconductor body is provided with doped regions which have high emissivity for infrared and an intrinsic region which h...	06/28/1988
4730331	Superluminescent LED source A light source comprises a semiconductor laser having a plurality of deposited semiconductor layers including an active region consisting of a plurality of layers forming at least two quantum wells in the active region. The layers immediately adjacent to ...	03/08/1988
4730207	Non-single-crystal semiconductor light emitting device A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where mࣙ3) of non-single-crystal semiconductor layers M	03/08/1988
4720642	Femto Diode and applications A Femto Diode responsive to light frequencies, is described. Quantum principles are utilized. The Femto Diode comprises a submicron metal cylinder with an assymetric metal-insulator-metal tunnel junction at one end and a reflecting potential step at the o...	01/19/1988
4710936	Optoelectronic semiconductor device A semiconductor laser device has a double hetero construction such that a direct transition type semiconductor layer having a high refractive index is placed between direct transition type semiconductor layers having a low refractive index, and has an opt...	12/01/1987
4694312	Non-single-crystal semiconductor light emitting device A non-single-crystal semiconductor light emitting device comprising a first non-single-crystal semiconductor layer of a first conductivity type; a non-single-crystal semiconductor intrinsic region formed in layers on the first non-single-crystal semicondu...	09/15/1987
4638334	Electro-optic line printer with super luminescent LED source An electro-optic line printer comprises a recording medium, a multigate line modulator for printing picture elements or pixels in spatially predetermined positions along a printing axis and an LED side-facet source characterized by having high output inte...	01/20/1987
4616244	Non-single-crystal semiconductor light emitting device A non-single-crystal semiconductor light emitting device is provided with a first electrode or a first laminate member of the first electrode and P (or N) type first non-single-crystal semiconductor layer formed on the first electrode, a non-single-crysta...	10/07/1986
4574161	Ordered dipolar light-electric power converter A bulk process is described which is capable of producing large area sheets about 8 micrometers thick having the property of light/electric power conversion at extremely high production rates (many m2 /s) at low cost ($1/m2). The dev...	03/04/1986
4566023	Squeezable electron tunnelling junction A mechanically adjustable tunnelling junction includes two electrodes defining a gap supported on substrates. Spacers maintain the electrodes in spaced apart relation. At least one of substrates is mechanically deformable, whereby the application of an ex...	01/21/1986
4554485	Solid-state image display device A solid-stage image display device is disclosed in which an electron injection region of high impurity density is formed on a surface of a semiconductor substrate of low impurity density, while a phosphor region of electron excitation type is formed on th...	11/19/1985
4450460	Magnetic-infrared-emitting diode A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as across the magnetic field, whereby an infrared radiation c...	05/22/1984
4165515	Light emitting tunnel junctions which are stable at room temperature Devices which emit in the visible region having a metal oxide barrier layer, e.g. magnesium oxide or beryllium oxide, and having a corresponding metal electrode, i.e., a magnesium or beryllium electrode, in addition to a silver electrode are stable at roo...	08/21/1979
4164374	Spectrophotometer utilizing a solid state source of radiant energy having a controllable frequency spectra characteristic A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff .nu.co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator ...	08/14/1979
4163920	Solid state source of radiant energy having a controllable frequency spectra characteristic A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff .nu.co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator ...	08/07/1979
3970839	Generating and using coherent optical radiation Optical radiation generation and detection using metal-to-metal diode junctions. Coherent optical radiation is generated by using an antenna connected to a metal-to-metal diode junction with non-linear current-voltage characteristics and by coupling to th...	07/20/1976

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Class 257/E33.044 - Device characterized by their operation (EPO)