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A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.
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| Number | Title | Issue Date |
| 7372077 | Semiconductor device A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed o... | 05/13/2008 |
| 7368759 | Semiconductor light-emitting device A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type ... | 05/06/2008 |
| 7348602 | Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan... | 03/25/2008 |
| 7345321 | High-brightness gallium-nitride based light emitting diode structure A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buf... | 03/18/2008 |
| 7180100 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 02/20/2007 |
| 7109530 | Nitride-based semiconductor element A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing extended etching. The nitride-based semiconductor element comprises a mask... | 09/19/2006 |
| 7087934 | Semiconductor light emitting device, image display unit, lighting apparatus, and method of fabricating semiconductor light emitting device A semiconductor light emitting device includes a crystal growth layer, and a crystal layer composed of a first conductive type layer, an active layer, and a second conductive type layer. The crystal layer is provided on the upper side of the crystal growth layer. In... | 08/08/2006 |
| 7052931 | Flat panel display device with first electrode having concentration gradient and fabrication method thereof A method of fabricating a flat panel display comprises forming a first electrode, forming at least one organic electroluminescent layer on the first electrode, forming an second electrode, wherein the first electrode comprises a first component of a transparent mate... | 05/30/2006 |
| 6649939 | Light-emitting diode with a structured surface For improving the light output, a light-emitting diode has at least one section of a light exit-side surface covered with a plurality of truncated pyramids. Light radiations, which are emitted by a light-generating layer, enter into the truncated pyramids... | 11/18/2003 |
| 6649440 | Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction A light-emitting diode (LED) and a method of making the device utilize a thick multi-layered epitaxial structure that increases the light extraction efficiency of the device. The LED is an aluminum-gallium-indium-nitride (AlGaInN)-based LED. The thick ... | 11/18/2003 |
| 6646292 | Semiconductor light emitting device and method A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contac... | 11/11/2003 |
| 6639254 | Epitaxial layer capable of exceeding critical thickness A substrate has a principal surface exposing a first semiconductor material. A micro structure is disposed on the principal surface of the substrate. The micro structure is made of a second semiconductor material having a lattice constant different from a... | 10/28/2003 |
| 6623171 | Socket and a system for optoelectronic interconnection and a method of fabricating such socket and system It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external ap... | 09/23/2003 |
| 6607595 | Method for producing a light-emitting semiconductor device Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlX Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-X N)... | 08/19/2003 |
| 6593599 | Light-emitting semiconductor device using gallium nitride group compound Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 07/15/2003 |
| 6563850 | Light-emitting device and fabricating method thereof A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum we... | 05/13/2003 |
| 6531405 | Process for producing a light-emitting and/or a light-receiving semiconductor body A light-emitting and/or light-receiving semiconductor body is produced with one or more semiconductor layers composed of GaAsx P1-x, where 0ࣘx | 03/11/2003 |
| 6521914 | III-Nitride Light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-elec... | 02/18/2003 |
| 6486499 | III-nitride light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-elec... | 11/26/2002 |
| 6479312 | Gallium phosphide luminescent device By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016 /cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type G... | 11/12/2002 |
| 6472689 | Light emitting device Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 10/29/2002 |
| 6472690 | Gallium nitride group compound semiconductor Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 10/29/2002 |
| 6469323 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 10/22/2002 |
| 6469314 | Thin multi-well active layer LED with controlled oxygen doping An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is ... | 10/22/2002 |
| 6459712 | Semiconductor devices An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insu... | 10/01/2002 |
| 6455877 | III-N compound semiconductor device A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface... | 09/24/2002 |
| 6433365 | Epitaxial wafer and light emitting diode An epitaxial wafer comprises epitaxial layers 3-6 formed on a main surface of a compound semiconductor single crystal substrate 2, wherein the epitaxial layer 3a on the main surface is exposed in a back surface of the compound semiconductor single crystal... | 08/13/2002 |
| 6413791 | Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance An epitaxial semiconductor crystal plate or wafer capable of attaining increased reliability with enhanced luminance, a manufacturing method thereof, as well as a light-emitting diode (LED). It has been found that epitaxial wafers with enhanced illuminanc... | 07/02/2002 |
| 6407410 | Semiconductor optical device A light emitting diode in accordance with the present invention has a p-n junction which is formed by selectively implanting an impurity from the surface of a semiconductor substrate, and also has an etched groove which is formed in the p-n junction area ... | 06/18/2002 |
| 6377596 | Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insu... | 04/23/2002 |
| 6362017 | Light-emitting semiconductor device using gallium nitride group compound Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 03/26/2002 |
| 6339014 | Method for growing nitride compound semiconductor A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Alx Ga1-x N (where 0ࣘ×ࣘ1) on a nitride compound semico... | 01/15/2002 |
| 6312967 | Semiconductor device and manufacture method thereof, as well as light emitting semiconductor device A semiconductor device such as a light emitting semiconductor device comprising a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively by way of the mask layer, with each of the mask layer and the sele... | 11/06/2001 |
| 6265236 | Method for the manufacture of a light emitting diode A method for manufacturing a light emitting diode with the following process steps. Preparation of a substrate; production on the substrate of a series of layers which include the pn junction, that generates the radiation; production of contact layers on ... | 07/24/2001 |
| 6249012 | Light emitting semiconductor device using gallium nitride group compound A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10-1 Ωcm to 8×10-3 Ωcm or a carrier concentration ranging from 6×1016 /cm3 to... | 06/19/2001 |
| 6225650 | GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct cont... | 05/01/2001 |
| 6215133 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 04/10/2001 |
| 6215132 | Light-emitting diode with divided light-emitting region A device for generating light with the aid of a semiconducting material consisting of two electrically conducting contact layers and at least one layer, arranged therebetween, of semiconducting material which comprises a light-emitting semiconducting laye... | 04/10/2001 |
| 6136626 | Semiconductor light-emitting device and production method thereof A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga1-x Inx N (0ࣘxࣘ0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so ... | 10/24/2000 |
| 6133589 | AlGaInN-based LED having thick epitaxial layer for improved light extraction A light-emitting diode (LED) and a method of making the device utilize a thick multi-layered epitaxial structure that increases the light extraction efficiency of the device. The LED is an aluminum-gallium-indium-nitride (AlGaInN)-based LED. The thick ... | 10/17/2000 |
