Class 257/E33.038 - Comprising only Group IV-VI compound (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.037. This subclass
No. of patents: 3
Last issue date: 11/19/2002

Number	Title	Issue Date
6483861	Silicon thin film structure for optoelectronic devices and method for fabricating the same Disclosed are a silicon thin film structure for optoelectronic devices and a method for manufacturing the same. The silicon thin film structure for optoelectronic devices, comprises a multi-layered structure consisting of a plurality of structural units, ...	11/19/2002
4413343	Lead chalcogenide semiconductor device In lead chalcogenide semiconductor devices such as PbSSe diode lasers, an element which functions as the acceptor, selected from among the elements forming the relevant semiconductor body, added to gold and the combination is used as the p conductivity ty...	11/01/1983
4350990	Electrode for lead-salt diodes A significantly more stable ohmic contact for a lead-salt semiconductor surface, especially for use in infrared lasers. The contact has layers of platinum, palladium or nickel alternating with gold, and then covered with indium. An Au-Pd-Au-In contact is ...	09/21/1982

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