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| Number | Title | Issue Date |
| 7282782 | Combined binary oxide semiconductor device A semiconductor device can include a channel including a first binary oxide and a second binary oxide. ... | 10/16/2007 |
| 7247889 | III-nitride material structures including silicon substrates III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) for... | 07/24/2007 |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 6399225 | Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same A luminescent substance contains silicon and nitrogen as major components and has an amorphous structure. The silicon content of the luminescent substance is greater than the stoichiometric silicon content of Si3 N4, and the luminous... | 06/04/2002 |
| 6368889 | Variable-wavelength light-emitting device and method of manufacture An object is to provide a variable-wavelength light-emitting element which employs a direct gap semiconductor having a magnetic moment for a semiconductor layer serving as an active layer, so that the semiconductor has reduced crystal distortion and stabl... | 04/09/2002 |
| 6294274 | Oxide thin film An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and stront... | 09/25/2001 |
| 5920086 | Light emitting device A device for generating radiant energy comprising a first electrode, a second electrode spaced apart from said first electrode, a material disposed between and in electrical communication with first and second electrodes, which emits radiant energy upon a... | 07/06/1999 |
| 5895938 | Semiconductor device using semiconductor BCN compounds Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating... | 04/20/1999 |
| 5594263 | Semiconductor device containing a semiconducting crystalline nanoporous material This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" semiconductor is a na... | 01/14/1997 |
| 5200805 | Silicon carbide:metal carbide alloy semiconductor and method of making the same A new type of semiconductor material is disclosed which consists of a ଲ-SiC:metal carbide alloy having the general formula Siw (metal 1)x (metal 2)y (metal 3)z C, where w+x+y+z=1 and 1>w>0. The metals are ... | 04/06/1993 |
| 5008891 | Semiconductor light-emitting devices Configurations of heterostructure semiconductor lasers and LEDs are desribed which enable emission wavelengths in the blue to ultra-violet region to be achieved. The structures are based on an n-type layer formed of a (ZnCd) (SSe) II-VI semiconductor and ... | 04/16/1991 |
| 4992837 | Light emitting semiconductor device A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer, and which are deposited on a semiconductor substrate. The substrate is made of one of GaAs, GaP, InP, ... | 02/12/1991 |
| 4940898 | Semiconducting metal silicide radiation detectors Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed e... | 07/10/1990 |
| 4914042 | Forming a transition metal silicide radiation detector and source Transition metal silicide semiconductor electromagnetic radiation source and detectors have a thin film of semiconducting silicide grown or deposited on a silicon wafer. The transition metals are chosen from a group consisting of iron, iridium, manganese,... | 04/03/1990 |
| 4782377 | Semiconducting metal silicide radiation detectors and source Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhe... | 11/01/1988 |
| 4439399 | Quaternary alloy A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions.... | 03/27/1984 |
| 4194141 | Electroluminescent unit Electroluminescent device for emitting green light comprising a conducting cadmium fluoride crystal of electron concentration greater than 1015 cm-3 having a manganese impurity of NMn concentration in the range: 0.1 mole p... | 03/18/1980 |
