Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 5389799 | Semiconductor device Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and another SiC layer of a second conductivity type. At least one ... | 02/14/1995 |
| 5187547 | Light emitting diode device and method for producing same A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3° from a {0001} plane, an n type silicon carbide layer gro... | 02/16/1993 |
| 5107538 | Optical waveguide system comprising a rare-earth Si-based optical device It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or sys... | 04/21/1992 |
| 5063421 | Silicon carbide light emitting diode having a pn junction A silicon carbide light emitting diode having a pn junction is disclosed which comprises a semiconductor substrate, a first silicon carbide single-crystal layer of one conductivity formed on the substrate, and a second silicon carbide single-crystal layer... | 11/05/1991 |
| 5027168 | Blue light emitting diode formed in silicon carbide The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465-470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comp... | 06/25/1991 |
| 4594528 | Thin film electroluminescence device and method of manufacturing the same A thin film electroluminescence device which comprises a pair of electrodes, at least one of which is transparent, and a light-emitting layer consisting essentially of oxygen-containing amorphous hydrogenated silicon carbide and being interposed between s... | 06/10/1986 |
| 3999206 | Semiconductor indicating device and method for production of same A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 μm, the concentration of neutral atoms in the n-region is from 1.5×1018 to 5×1018 cm-.sup.3 an... | 12/21/1976 |
| 3986193 | Semiconductor SiCl light source and a method of manufacturing same A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor impurity, wherein the uncompensated majority donor concent... | 10/12/1976 |
