Class 257/E33.035 - Comprising only Group IV compound (e.g., SiC) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 34
Last issue date: 12/04/2007

Number	Title	Issue Date
7304334	Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided ...	12/04/2007
6690027	Method for making a device comprising layers of planes of quantum dots A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and f...	02/10/2004
6632694	Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC...	10/14/2003
6403975	Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si cappin...	06/11/2002
6210987	Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emis...	04/03/2001
5939732	Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emis...	08/17/1999
5912477	High efficiency light emitting diodes Light emitting diodes are disclosed which have increased external efficiency and are formed from silicon carbide substrates. Diodes are produced by a method which includes directing a beam of laser light at one surface of a portion of silicon carbide, and...	06/15/1999
5834378	Passivation of porous semiconductors for improved optoelectronic device performance and fabrication of light-emitting diode bases on same A method for substantially improving the photo luminescent performance of a porous semiconductor, involving the steps of providing a bulk semiconductor substrate wafer of a given conductivity, wherein the substrate wafer has a porous semiconductor layer o...	11/10/1998
5757024	Buried porous silicon-germanium layers in monocrystalline silicon lattices Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition. Also monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than th...	05/26/1998
5631190	Method for producing high efficiency light-emitting diodes and resulting diode structures A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to v...	05/20/1997
5604135	Method of forming green light emitting diode in silicon carbide A light emitting diode is disclosed that emits in the green portion of the visible spectrum, along with a method of producing the diode. The light emitting diode comprises a 6H silicon carbide substrate having a planar surface inclined more than one degre...	02/18/1997
5569932	Porous silicon carbide (SIC) semiconductor device Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in t...	10/29/1996
5523592	Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si0.8 Ge0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenat...	06/04/1996
5454915	Method of fabricating porous silicon carbide (SiC) Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in t...	10/03/1995
5427977	Method for manufacturing porous semiconductor light emitting device An Si or SiC semiconductor layer is subjected to anodic oxidation in an HF solution to form a porous semiconductor layer. Without drying, the porous semiconductor layer is then immersed in pure water. Ultrasonic waves applied to the pure water shorten the...	06/27/1995
5416342	Blue light-emitting diode with high external quantum efficiency A light emitting diode is disclosed that emits light in the blue portion of the visible spectrum with high external quantum efficiency. The diode comprises a single crystal silicon carbide substrate having a first conductivity type, a first epitaxial laye...	05/16/1995
5387804	Light emitting diode A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride...	02/07/1995
5376241	Fabricating porous silicon carbide The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulat...	12/27/1994
5338944	Blue light-emitting diode with degenerate junction structure A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a li...	08/16/1994
5331180	Porous semiconductor light emitting device An Si or SiC semiconductor layer is subjected to anodic oxidization in an HF solution to form a porous semiconductor layer. Without drying the porous semiconductor layer, it is then dipped in pure water. Ultrasonic waves applied to the pure water shorten ...	07/19/1994
5329141	Light emitting diode A light emitting diode of silicon carbide having a p-n junction comprising an n-type layer doped with donor impurities, a first p-type layer doped with acceptor impurities, and a second p-type layer doped with acceptor impurities and donor impurities. The...	07/12/1994
5319220	Silicon carbide semiconductor device A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a ଲ-type silicon carbide layer h...	06/07/1994
5313078	Multi-layer silicon carbide light emitting diode having a PN junction This invention is a multi-layer pn type silicon carbide light emitting diode. A first n-type silicon carbide layer is deposited on an n-type substrate. The first n-type silicon carbide layer has an electron concentration larger than 1×1015 cm	05/17/1994
5298767	Porous silicon carbide (SiC) semiconductor device A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodime...	03/29/1994
5273933	Vapor phase growth method of forming film in process of manufacturing semiconductor device In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH3)3 SiN3 is used as raw material for nitrogen. The films...	12/28/1993
5243204	Silicon carbide light emitting diode and a method for the same There are provided silicon carbide light emitting diodes having a p-n junction which is constituted by a p-type silicon carbide single-crystal layer and an n-type silicon carbide single-crystal layer formed thereon. In cases where light emission caused by...	09/07/1993
5200805	Silicon carbide:metal carbide alloy semiconductor and method of making the same A new type of semiconductor material is disclosed which consists of a ଲ-SiC:metal carbide alloy having the general formula Siw (metal 1)x (metal 2)y (metal 3)z C, where w+x+y+z=1 and 1>w>0. The metals are ...	04/06/1993
5027168	Blue light emitting diode formed in silicon carbide The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465-470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comp...	06/25/1991
4918497	Blue light emitting diode formed in silicon carbide The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 475-480 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comp...	04/17/1990
4860069	Non-single-cry stal semiconductor light emitting device A non-single-crystal semiconductor light emitting device comprising a first electrode, a first conductiveity type non-single-crystal semiconductor layer formed on the first electrode, a non-single-crystal semiconductor region formed on the first non-singl...	08/22/1989
4531142	Light emitting diode having silicon carbide layers A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity...	07/23/1985
4071945	Method for manufacturing a semiconductor display device A method for manufacturing a semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is dispose...	02/07/1978
3982262	Semiconductor indicating instrument A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of op...	09/21/1976
3972749	Semiconductor light source on the basis of silicon carbide single crystal A semiconductor light source on the basis of n-type silicon carbide single crystal, wherein an epitaxial silicon carbide film of the same type is disposed on the basic single crystal, a p-n junction with a depth of 0.1-2 μm is arranged on the surface of ...	08/03/1976

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Class 257/E33.035 - Comprising only Group IV compound (e.g., SiC) (EPO)