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| Number | Title | Issue Date |
| RE40485 | Semiconductor light-emitting element In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN... | 09/09/2008 |
| 7411273 | Nitride semiconductor substrate In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±... | 08/12/2008 |
| 7408182 | Surface passivation of GaN devices in epitaxial growth chamber The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation l... | 08/05/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7345315 | Gallium nitride based light-emitting device A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white c... | 03/18/2008 |
| 7319247 | Light emitting-diode chip and a method for producing same An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate ( | 01/15/2008 |
| 7315045 | Sapphire/gallium nitride laminate having reduced bending deformation The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e−(x−1)/T... | 01/01/2008 |
| 7288797 | Semiconductor light emitting element A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film inclu... | 10/30/2007 |
| 7217947 | Semiconductor light source and method of making A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandw... | 05/15/2007 |
| 7115896 | Semiconductor structures for gallium nitride-based devices A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure includi... | 10/03/2006 |
| 7087922 | Light-emitting diode structure A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa | 08/08/2006 |
