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| Number | Title | Issue Date |
| 7432534 | III-nitride semiconductor light emitting device The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor... | 10/07/2008 |
| 7408183 | Low cost InGaAIN based lasers A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the se... | 08/05/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7307292 | Semiconductor device and method for fabricating the same An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is ... | 12/11/2007 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impu... | 09/18/2007 |
| 7161301 | Nitride light-emitting device having an adhesive reflecting layer A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal ... | 01/09/2007 |
| 7087922 | Light-emitting diode structure A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa | 08/08/2006 |
