Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7348602 | Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan... | 03/25/2008 |
| 7276735 | Laminated semiconductor substrate and optical semiconductor element A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of In... | 10/02/2007 |
| 7253865 | Non rectangular display device A display device has an array 40 of pixels and row and column driver circuitry comprising row driver circuit portions R and column driver circuit portions C, each pixel being addressed by a row driver circuit portion R and a column driver circuit portion C wh... | 08/07/2007 |
| 7217960 | Semiconductor device It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage curren... | 05/15/2007 |
| 7145180 | Method of fabricating a light emitting device, and light emitting device In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion... | 12/05/2006 |
