Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 7432534 | III-nitride semiconductor light emitting device The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor... | 10/07/2008 |
| 7402838 | Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contr... | 07/22/2008 |
| 7235820 | Group III-nitride light emitting device The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode ... | 06/26/2007 |
| 7193246 | Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contr... | 03/20/2007 |
| 7170101 | Nitride-based semiconductor light-emitting device and manufacturing method thereof A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount sur... | 01/30/2007 |
| 7105857 | Nitride semiconductor device comprising bonded substrate and fabrication method of the same A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 | 09/12/2006 |
| 6645785 | Light-emitting semiconductor device using group III nitride compound An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With ... | 11/11/2003 |
| 6620709 | Fabrication of semiconductor materials and devices with controlled electrical conductivity A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MO... | 09/16/2003 |
| 6586779 | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is... | 07/01/2003 |
| 6583449 | Semiconductor device and method of forming a semiconductor device A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a cova... | 06/24/2003 |
| 6518602 | Nitride compound semiconductor light emitting device and method for producing the same A nitride compound semiconductor light emitting device of the present invention includes: a nitride compound semiconductor substrate; and a light emitting device section including a nitride compound semiconductor provided on the nitride compound semicondu... | 02/11/2003 |
| 6498111 | Fabrication of semiconductor materials and devices with controlled electrical conductivity A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MO... | 12/24/2002 |
| 6479313 | Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V gr... | 11/12/2002 |
| 6469323 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 10/22/2002 |
| 6441393 | Semiconductor devices with selectively doped III-V nitride layers A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (... | 08/27/2002 |
| 6413312 | Method for growing a nitride compound semiconductor A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after gro... | 07/02/2002 |
| 6406930 | Fabrication of visible light emitting device formed from wide band gap semiconductor doped with a rare earth element A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped w... | 06/18/2002 |
| 6399966 | Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is... | 06/04/2002 |
| 6365923 | Nitride semiconductor light-emitting element and process for production thereof A nitride semiconductor light-emitting element containing an n-type layer, a light-emitting layer on the n-type layer, a first p-type layer on the light-emitting layer and a second p-type layer on the first p-type layer, the first p-type layer containing ... | 04/02/2002 |
| 6335218 | Method for fabricating a group III nitride semiconductor device A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (Alx Ga1-x)1-y.In.sub.y N (0ࣘ×ࣘ1, 0ࣘyࣘ1) do... | 01/01/2002 |
| 6329215 | Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity The subject of the Invention is the method of fabrication of nitride semiconductor A3 B5 such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural ... | 12/11/2001 |
| 6320207 | Light emitting device having flat growth GaN layer A light emitting device has an N-type gallium nitride system compound semiconductor layer provided on a substrate; and a P-type gallium nitride system compound semiconductor layer provided on said N-type gallium nitride system compound semiconductor layer... | 11/20/2001 |
| 6288416 | Light-emitting semiconductor device using group III nitride compound An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With ... | 09/11/2001 |
| 6265726 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3 Ga1-x3) | 07/24/2001 |
| 6255669 | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped w... | 07/03/2001 |
| 6238945 | Method of making P-type group III-nitride semiconductor device having improved P contact A Group III-nitride semiconductor device that has a low voltage-drop p-contact and comprises a substrate layer, a metal electrode and an intermediate layer sandwiched between the substrate layer and the metal electrode. The substrate layer is a layer of a... | 05/29/2001 |
| 6225195 | Method for manufacturing group III-V compound semiconductor A method for manufacturing a group III-V compound semiconductor represented by the general formula Inx Gay Alz N (where x+y+z=1, 0ࣘxࣘ1, 0ࣘyࣘ1, and 0ࣘzࣘ1) by metalorganic vapor phase epitaxy method is provided. ... | 05/01/2001 |
| 6221684 | GaN based optoelectronic device and method for manufacturing the same An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the ac... | 04/24/2001 |
| 6215133 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 04/10/2001 |
| 6150672 | P-type group III-nitride semiconductor device A Group III-nitride semiconductor device that has a low voltage-drop p-contact and comprises a substrate layer, a metal electrode and an intermediate layer sandwiched between the substrate layer and the metal electrode. The substrate layer is a layer of a... | 11/21/2000 |
| 6147364 | Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of Nbg1 cm-3, the single-crystal layer being provided near the substrate an... | 11/14/2000 |
| 6136626 | Semiconductor light-emitting device and production method thereof A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga1-x Inx N (0ࣘxࣘ0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so ... | 10/24/2000 |
| 6133058 | Fabrication of semiconductor light-emitting device A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga1-x Inx N (0ࣘxࣘ0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so ... | 10/17/2000 |
| 6120600 | Double heterojunction light emitting diode with gallium nitride active layer A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between t... | 09/19/2000 |
| 6117700 | Method for fabricating semiconductor device having group III nitride First, n-type contact layer of GaN, n-type cladding layer of AlGaN, active layer of InGaN, first Mg-doped layer of AlGaN and second Mg-doped layer of GaN are grown in this order over a sapphire substrate. Thereafter, the substrate, including the second Mg... | 09/12/2000 |
| 6104039 | P-type nitrogen compound semiconductor and method of manufacturing same A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of t... | 08/15/2000 |
| 6078063 | Light-emitting gallium nitride-based compound semiconductor device A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0 | 06/20/2000 |
| 6057565 | Semiconductor light emitting device including a non-stoichiometric compound layer and manufacturing method thereof In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the lea... | 05/02/2000 |
| 6043140 | Method for growing a nitride compound semiconductor A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after gro... | 03/28/2000 |
| 6020602 | GaN based optoelectronic device and method for manufacturing the same An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the ac... | 02/01/2000 |
