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| Number | Title | Issue Date |
| 7208774 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first cond... | 04/24/2007 |
| 7196357 | Optical semiconductor apparatus The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an... | 03/27/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6350997 | Semiconductor light emitting element In a semiconductor light emitting element using InGaAlP semiconductors, reduced in operative voltage and increased in optical output, a contact layer doped with a predetermined amount of carbon is provided to reduce the contact resistance at the contact w... | 02/26/2002 |
| 5895706 | Epitaxial structure for GaP light-emitting diode An epitaxial structure for a GaP light-emitting diode comprises an n-type GaP single crystal substrate on which is formed a plural buffer layer epitaxially grown on the single crystal substrate, in which the buffer layer has a lower etch pit density than ... | 04/20/1999 |
| 5886369 | Epitaxial wafer for GaP pure green light-emitting diode and GaP pure green light-emitting diode An epitaxial wafer for a GaP pure green light emitting diode includes an n-type single crystal GaP substrate formed in order thereon with a first n-type GaP epitaxial layer, a second n-type GaP epitaxial layer and a p-type GaP epitaxial layer. The p-type ... | 03/23/1999 |
| 5726462 | Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a par... | 03/10/1998 |
| 5571321 | Method for producing a gallium phosphide epitaxial wafer This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have.... | 11/05/1996 |
| 5514881 | Gap light emitting device having a low carbon content in the substrate A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP sing... | 05/07/1996 |
| 5442191 | Isotopically enriched semiconductor devices A semiconductor structure including a single-crystal region composed of an isotopically enriched material, wherein the isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon; and a semic... | 08/15/1995 |
| 5407858 | Method of making gap red light emitting element substrate by LPE To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga2 O3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said su... | 04/18/1995 |
| 5369290 | Light emission element using a polycrystalline semiconductor material of III-V group compound A light emission element using a plycrystalline semiconductor material of III-V group compound comprises an n type semiconductor polycrystalline layer and a p type semiconductor polycrystalline layer. In such a light emission element, the n type semicondu... | 11/29/1994 |
| 5144409 | Isotopically enriched semiconductor devices A semiconductor structure including a single-crystal region composed of an isotopically enriched semiconductor material, and a semiconductor device formed in the isotopically enriched semiconductor region.... | 09/01/1992 |
| 5032539 | Method of manufacturing green light emitting diode In a method of manufacturing a green diode, an included angle defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region formed on a cleavage surface of a GaP single crystal wafer and a surface of the wafer i... | 07/16/1991 |
| 4965644 | Pure green light emitting diodes and method of manufacturing the same Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5×1... | 10/23/1990 |
| 4689125 | Fabrication of cleaved semiconductor lasers A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place.... | 08/25/1987 |
| 4671829 | Manufacturing green light emitting diodes In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1×104 cm-2... | 06/09/1987 |
| 4384398 | Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs The occurrence of pyramidal protrusions on the surface of GaAs and GaAlAs p-n junction wafers produced by a multislice liquid phase epitaxy process is avoided by slow cooling to a specified quenching temperature or below. The pyramidal protrusions are con... | 05/24/1983 |
| 4180825 | Heteroepitaxial deposition of GaP on silicon substrates A crack free layer of GaP is epitaxially deposited on a silicon phosphide surface of a silicon substrate having an (III) orientation. The silicon substrate is prebaked on a carbide coated susceptor with palladium diffused hydrogen at about 1200° C. and p... | 12/25/1979 |
| 3991163 | Process for the production of III-V compounds A process for the production of compact polycrystalline III A - V B compounds such as GaP through direct synthesis from the components in a closed horizontal system, in which at least one of the components has a substantially higher partial vapor pressure... | 11/09/1976 |
