Bizarre Patents
A helium-filled sun shade for protecting individuals engaged in outdoor activities.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7375383 | Gallium nitride based III-V group compound semiconductor device and method of producing the same A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed ... | 05/20/2008 |
| 7364929 | Nitride semiconductor based light-emitting device and manufacturing method thereof An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conducti... | 04/29/2008 |
| 7348200 | Method of growing non-polar a-plane gallium nitride The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitri... | 03/25/2008 |
| 7208774 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first cond... | 04/24/2007 |
| 7170095 | Semi-insulating GaN and method of making the same Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the gro... | 01/30/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 7132730 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 11/07/2006 |
| 7098482 | Monolithic white light emitting device A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is... | 08/29/2006 |
| 7087922 | Light-emitting diode structure A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa | 08/08/2006 |
| 7015565 | Gallium nitride type semiconductor laser device A gallium nitride type semiconductor laser device includes: a substrate; and a layered structure formed on the substrate. The layered structure at least includes an active layer of a nitride type semiconductor material which is interposed between a pair of nitride t... | 03/21/2006 |
| 6788453 | Method for producing inorganic semiconductor nanocrystalline rods and their use The present invention provides a new method for the production of inorganic semiconductor nanocrystals having a rod-like shape. More specifically the present invention provides a method of synthesizing rod shaped Group III-V semiconductor nanocrystals. The method co... | 09/07/2004 |
| 6693307 | Semiconductor light emitting element In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal to improve the thermal resistance of the crystal and the re... | 02/17/2004 |
| 4228455 | Gallium phosphide semiconductor device having improved electrodes A gallium phosphide semiconductor device comprising an N type gallium phosphide monocrystal, a semiconductor layer formed in or on the monocrystal, and a pair of electrodes formed on the monocrystal and on the semiconductor layer. The electrode on the mon... | 10/14/1980 |
| 3942243 | Ohmic contact for semiconductor devices An ohmic contact for semiconductor devices, typically for contact to the P-type region of a GAsP Light Emitting Diode. The ohmic contact comprises a sequential deposition of a multi-layered structure comprising, respectively, aluminum, zinc and aluminum. ... | 03/09/1976 |
