Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 6610141 | Zinc oxide films containing p-type dopant and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 08/26/2003 |
| 6475825 | Process for preparing zinc oxide films containing p-type dopant A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of... | 11/05/2002 |
| 6456639 | Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type c... | 09/24/2002 |
| 6414975 | Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type c... | 07/02/2002 |
| 6410162 | Zinc oxide films containing P-type dopant and process for preparing same A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net ... | 06/25/2002 |
| 6407405 | p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, ... | 06/18/2002 |
| 6342313 | Oxide films and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 01/29/2002 |
| 6291085 | Zinc oxide films containing P-type dopant and process for preparing same A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of... | 09/18/2001 |
| 5998809 | Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter A room temperature emitter (10) operating in the 3-5 μm wavelength range is provided. The emitter (10) includes a substrate (12) formed of a material selected from the group comprising cadmium telluride or cadmium zinc telluride. An epitaxial active laye... | 12/07/1999 |
| 5943355 | Semiconductor light emitting device A semiconductor light emitting device composed of an n-type cladding layer, an n-type guide layer, an active layer, a p-type guide layer, and a p-type cladding layer which are sequentially laminated on a substrate. The p-type guide layer is formed from Zn... | 08/24/1999 |
| 5865897 | Method of producing film of nitrogen-doped II-VI group compound semiconductor A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited... | 02/02/1999 |
| 5834792 | Articles comprising doped semiconductor material The disclosed novel doping method makes it possible to tailor the effective activation energy of a dopant species in semiconductor material. The method involves formation of very thin layers of δ-doped second semiconductor material in first semiconductor... | 11/10/1998 |
| 5776793 | Method of fabricating opto-electronic device A method of fabricating opto-electronic device includes steps of introducing a first reacting gas flow, a second reacting gas flow and (a) dopant(s) into a reactor to form epilayer(s) on a substrate wherein the ratio of the first reacting gas and the seco... | 07/07/1998 |
| 5772759 | Process for producing p-type doped layers, in particular, in II-VI semiconductors Disclosed is a process for producing p-type doped layers, in particular, in II-VI semiconductors, in which the p-type doped layer is produced in a CVD-step by means of plasma activation of nitrogenated gases.... | 06/30/1998 |
| 5740193 | Semiconductor light-emitting device A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life... | 04/14/1998 |
| 5657336 | Semiconductor light-emitting device A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life... | 08/12/1997 |
| 5574296 | Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (ND /NA) of less than or equal to about 0.8. The net acceptor concentrati... | 11/12/1996 |
| 5538918 | Method of fabricating a buried-ridge II-VI laser diode A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.... | 07/23/1996 |
| 5513199 | Blue-green laser diode A II-VI compound semiconductor laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers forming the pn junction include a first cladding layer of a first... | 04/30/1996 |
| 5488234 | Semiconductor element having bivalent and VI group element and an insulating layer Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section parti... | 01/30/1996 |
| 5404027 | Buried ridge II-VI laser diode A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.... | 04/04/1995 |
| 5396103 | Graded composition ohmic contact for P-type II-VI semiconductors A II-VI laser diode including a substrate, a device layer of p-type II-VI semiconductor, an electrode and an ohmic contact layer between the electrode and device layer. The ohmic contact layer comprises a graded composition semiconductor compound includin... | 03/07/1995 |
| 5382813 | Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers A light emission diode comprises a semiconductor substrate and a pn junction structure including an n-type ZnS compound semiconductor layer and a p-type ZnS compound semiconductor layer, Al being present in at least one of the semiconductor layers. By thi... | 01/17/1995 |
| 5274269 | Ohmic contact for p-type group II-IV compound semiconductors A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode ... | 12/28/1993 |
| 5274248 | Light-emitting device with II-VI compounds The present invention provides a p-n junction type blue luminescence device forming a p-type hole injection layer and having high light-emission efficiency. On an n-conduction type ZnS substrate 111, there is formed a multiquantum well structure 112 alter... | 12/28/1993 |
| 5252499 | Wide band-gap semiconductors having low bipolar resistivity and method of formation A wide band-gap semiconductor, such as a II-VI semiconductor having low bipolar resistivity and a method for producing such a semiconductor. To form this semiconductor, atomic hydrogen is used to neutralize compensating contaminants. Alternatively, the se... | 10/12/1993 |
| 5248631 | Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA... | 09/28/1993 |
| 5234842 | Method of producing p-typed CdS A method of producing a p-type CdS wherein oxygen is doped into a CdS layer at a concentration in a range between 1016 and 1019 atomic/cm3.... | 08/10/1993 |
| 5213998 | Method for making an ohmic contact for p-type group II-VI compound semiconductors A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor ... | 05/25/1993 |
| 5198690 | Electroluminescent device of II-IV compound semiconductor An electroluminescent device of compound semiconductor which is made of II-IV compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing comprises a II-VI compound se... | 03/30/1993 |
| 5187116 | Process for preparing electroluminescent device of compound semiconductor A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n ju... | 02/16/1993 |
| 5150191 | P-type II-VI compound semiconductor doped An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semi... | 09/22/1992 |
| 5140385 | Light emitting element and method of manufacture A light emitting element for a blue light emitting diode which consists of a semiconductor substrate crystal, a II-VI compound semiconductor layer having an n-type conduction of low resistivity and a II-VI compound semiconductor layer having a p-type cond... | 08/18/1992 |
| 5113233 | Compound semiconductor luminescent device A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a cu... | 05/12/1992 |
| 5103269 | Electroluminescent device of compound semiconductor comprising ZnS or ZnS and ZnSe An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition d... | 04/07/1992 |
| 5068204 | Method of manufacturing a light emitting element A blue light emitting diode which has a multiple layer structure and is grown on a semiconductor crystalline substrate, wherein zinc of a group II element of the periodic table, lithium, sodium, or potassium of group VI elements are used. These elements a... | 11/26/1991 |
| 5055363 | Electroluminescent device of compound semiconductor The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for ... | 10/08/1991 |
| 5045894 | Compound semiconductor light emitting device Strained-layer superlattices are formed on a substrate by alternately and epitaxially laminating a plurality of first compound semiconductor layers each of which is composed of a II-Vi compound semiconductor and second compound semiconductor layers each o... | 09/03/1991 |
| 5045897 | Quaternary II-VI materials for photonics A photonic device includes a substrate and a region comprised of a quaternary Group II-VI material supported by the substrate. Examples of quaternary Group II-IV alloys include Hg, Zn, S and Se; Hg, Zn, Se and Te; Zn, S, Se and Te; Zn, Mn, S and Se; and H... | 09/03/1991 |
