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| Number | Title | Issue Date |
| 7335920 | LED with current confinement structure and surface roughening An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-ty... | 02/26/2008 |
| 7145180 | Method of fabricating a light emitting device, and light emitting device In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion... | 12/05/2006 |
| 6693352 | Contact structure for group III-V semiconductor devices and method of producing the same A contact structure for group III-V and group II-VI compound semiconductor devices, generally used as a light emitting diode (LED), a laser diode (LD), or a photodiode (PD), comprising p-type and/or n-type conduction is disclosed. The contact structure co... | 02/17/2004 |
| 6673641 | Contact structure for an electric II/VI semiconductor component and a method for the production of the same A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distin... | 01/06/2004 |
| 6674098 | ZnO compound semiconductor light emitting element A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and als... | 01/06/2004 |
| 6664570 | P-type contact electrode device and light-emitting device A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The ... | 12/16/2003 |
| 6639354 | Light emitting device, production method thereof, and light emitting apparatus and display unit using the same An n-type cladding layer formed of a non-single crystal body of n-type AlGaN, a light emitting layer containing a plurality of micro-crystals made from ZnO, and a p-type cladding layer formed of a non-single crystal body of p-type BN are sequentially stac... | 10/28/2003 |
| 6583450 | II-VI semiconductor device with BeTe buffer layer A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top elect... | 06/24/2003 |
| 6518077 | Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers ... | 02/11/2003 |
| 6495859 | Opto-electronic component made from II-VI semiconductor material A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeT... | 12/17/2002 |
| 6456639 | Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type c... | 09/24/2002 |
| 6423983 | Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers ... | 07/23/2002 |
| 6420731 | Light emitting diode and manufacturing method thereof An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a... | 07/16/2002 |
| 6414975 | Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type c... | 07/02/2002 |
| 6372536 | II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semic... | 04/16/2002 |
| 6265734 | Opto-electronic component made from II-VI semiconductor material Component having an active layer (4), barrier layers (3, 5), and, if appropriate, a buffer layer (2), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/... | 07/24/2001 |
| 6206962 | Semiconductor light emitting device and method of manufacturing same An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer c... | 03/27/2001 |
| 6178190 | II-VI compound semiconductor light emitting device A semiconductor light emitting device has a stacked structure including an n-type clad layer, an active layer, and a p-type clad layer on an InP substrate. The p-type clad layer is made from an MgZnSeTe-based compound semiconductor lattice-matched with In... | 01/23/2001 |
| 6090637 | Fabrication of II-VI semiconductor device with BeTe buffer layer A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top elect... | 07/18/2000 |
| 6087725 | Low barrier ohmic contact for semiconductor light emitting device On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn0.9 Mg0.1 S0.13 Se0.87, an n-type light guiding layer of n-type ZnS0.06 Se0.94, an active layer of ZnCdSe and a p-type li... | 07/11/2000 |
| 6088375 | Semiconductor device comprising p-type ZnMgSSe layer A II-VI semiconductor device has a p-doped quaternary ZnMgSSe layer formed of undoped sublayers and p-doped sublayers.... | 07/11/2000 |
| 6078062 | II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produce... | 06/20/2000 |
| 6069020 | Method of manufacturing semiconductor light-emitting device In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elemen... | 05/30/2000 |
| 6031244 | Luminescent semiconductor device with antidiffusion layer on active layer surface A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, an... | 02/29/2000 |
| 6020601 | Semiconductor light-emitting device A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Znx M... | 02/01/2000 |
| 5998809 | Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter A room temperature emitter (10) operating in the 3-5 μm wavelength range is provided. The emitter (10) includes a substrate (12) formed of a material selected from the group comprising cadmium telluride or cadmium zinc telluride. An epitaxial active laye... | 12/07/1999 |
| 5963573 | Light absorbing layer for II-VI semiconductor light emitting devices A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI semiconductor waveguide layer, outside of the active region. The... | 10/05/1999 |
| 5949093 | Semiconductor light emitting device with current blocking region A semiconductor light emitting device comprises: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on the II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a... | 09/07/1999 |
| 5943355 | Semiconductor light emitting device A semiconductor light emitting device composed of an n-type cladding layer, an n-type guide layer, an active layer, a p-type guide layer, and a p-type cladding layer which are sequentially laminated on a substrate. The p-type guide layer is formed from Zn... | 08/24/1999 |
| 5909459 | Surface-emitting semiconductor light emitting device A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-typ... | 06/01/1999 |
| 5898662 | Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type ... | 04/27/1999 |
| 5889295 | Semiconductor device Disclosed is a long-life GaN-based semiconductor device which is achieved by reducing the operating voltage of the semiconductor device comprising a GaN-based or a ZnSe-based compound semiconductor formed on a sapphire substrate and by preventing the elec... | 03/30/1999 |
| 5872023 | Method of fabricating of light emitting device with controlled lattice mismatch The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second ... | 02/16/1999 |
| 5828086 | Semiconductor light emitting device with a Mg superlattice structure A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlatti... | 10/27/1998 |
| 5822347 | Semiconductor light emitting device and method for fabricating the same In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provide... | 10/13/1998 |
| 5818072 | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc mercury selenide (Znx Hg1-x Se) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc mercury sele... | 10/06/1998 |
| 5786603 | Multilayer structured semiconductor devices At an n--n hetero-interface in a ZnSe-based or GaN-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A sing... | 07/28/1998 |
| 5782996 | Graded compositions of II-VI semiconductors and devices utilizing same A graded layer composition of Zn(Se,Te) in which the Te fraction varies across the layer in a super-parabolic grading profile. Such a graded layer has lower contact resistance than graded layers in which the Te fraction varies in a linear or parabolic gra... | 07/21/1998 |
| 5766345 | Epitaxial growth method of semiconductor An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it ... | 06/16/1998 |
| 5732099 | Semiconductor light emitting device A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the direction. Side surfaces of the groove has the maximum inclination ... | 03/24/1998 |
