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| Number | Title | Issue Date |
| 7189996 | Electron injection composition for light emitting element, light emitting element, and light emitting device In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electro... | 03/13/2007 |
| 6674098 | ZnO compound semiconductor light emitting element A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and als... | 01/06/2004 |
| 6590336 | Light emitting device having a polar plane piezoelectric film and manufacture thereof The light emitting device comprises: a substrate; and a first piezoelectric film held on the substrate and having one of a positive plane and a negative plane, the first piezoelectric film functioning as a light emitting layer.... | 07/08/2003 |
| 5949081 | Dynamic infrared scene projector A dynamic infrared scene projector for use infrared detections systems which has particular, although not exclusive, use in thermal imaging or seeker systems. In such systems, a dynamic infrared scene projector is used to simulate the thermal scene for te... | 09/07/1999 |
| 5548127 | Semiconductor light emitting device and its manufacturing method In a light emitting device made of a group II-VI semiconductor, a P-type interface film including one or two layers is formed between the positive electrode and the uppermost P-type layer of the group II-VI semiconductor film, to make the energy band incr... | 08/20/1996 |
| 5540786 | Light emitting material A novel photoluminescent material is disclosed comprising an active layer of ZnS1-x Tex deposited directly onto a substrate by molecular beam epitaxy. The emitted light is primarily in the blue end of the spectrum. The substrate may ... | 07/30/1996 |
| 5250814 | Semiconductor light-emitting devices A semiconductor light-emitting device, such as LEDs AND laser diodes having emission wavelengths in a range which includes the blue to ultra-violet region of the spectrum are disclosed. The LED comprises a substrate and an p-n junction structure formed on... | 10/05/1993 |
| 5140385 | Light emitting element and method of manufacture A light emitting element for a blue light emitting diode which consists of a semiconductor substrate crystal, a II-VI compound semiconductor layer having an n-type conduction of low resistivity and a II-VI compound semiconductor layer having a p-type cond... | 08/18/1992 |
| 5091758 | Semiconductor light-emitting devices Light-emitting semiconductor devices comprising a substrate and a p-n junction structure formed on the substrate are described. The p-n junction structure is made of a combination of a wide gap semiconductor layer made of a p-type chalcopyrite semiconduct... | 02/25/1992 |
| 5068204 | Method of manufacturing a light emitting element A blue light emitting diode which has a multiple layer structure and is grown on a semiconductor crystalline substrate, wherein zinc of a group II element of the periodic table, lithium, sodium, or potassium of group VI elements are used. These elements a... | 11/26/1991 |
| 5045897 | Quaternary II-VI materials for photonics A photonic device includes a substrate and a region comprised of a quaternary Group II-VI material supported by the substrate. Examples of quaternary Group II-IV alloys include Hg, Zn, S and Se; Hg, Zn, Se and Te; Zn, S, Se and Te; Zn, Mn, S and Se; and H... | 09/03/1991 |
| 5043774 | Light-emitting semiconductor device A light-emitting semiconductor device for emission of visible light of an n+ np+ junction type, especially a light-emitting diode and thin film electroluminescence device, is constituted of semiconductor films including elements belo... | 08/27/1991 |
| 4952811 | Field induced gap infrared detector A tunable infrared detector employing a vanishing band gap semimetal material which is provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities. The semimetal material may thus operate as ... | 08/28/1990 |
| 4868615 | Semiconductor light emitting device using group I and group VII dopants A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnSx Se1-x crystal layer (0ࣘxࣘ1) formed on the substrate and containing a Group VII element as a donor impurity, and... | 09/19/1989 |
| 4689125 | Fabrication of cleaved semiconductor lasers A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place.... | 08/25/1987 |
| 4263056 | Method for the manufacture of light emitting and/or photodetective diodes Method for the manufacture of light emitting and/or photodetective diodes, wherein it comprises the following operations: (a) starting with a substrate of the material Mgx Zn1-x Te; (b) a means which will make this material conductive is appli... | 04/21/1981 |
