Class 257/E33.019 - Comprising only Group II-VI compound (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.013. This subclass
No. of patents: 27
Last issue date: 02/13/2007

Number	Title	Issue Date
7176054	Method of forming a p-type group II-VI semiconductor crystal layer on a substrate A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a d...	02/13/2007
6699371	Fabrication method of blue light emitting ZnO thin film phosphor Substrate that is vapor-deposited with dopant-added ZnO thin film is loaded into a heat-treating chamber, and heat-treated quickly under gas atmosphere to activate the dopant. A thin film phosphor having new luminescence peak can be fabricated by quick-he...	03/02/2004
6642547	Light emitting device The present invention provide a light emitting device including: a resin base having a patterned interconnection; an n-type ZnSe substrate mounted on the resin base; an epitaxial light emission structure formed of a compound crystal relating to ZnSe servi...	11/04/2003
6610141	Zinc oxide films containing p-type dopant and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con...	08/26/2003
6589362	Zinc oxide semiconductor member formed on silicon substrate The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen fluoride (HF) diluted with pure water to 10% (process(1)). The ...	07/08/2003
6448585	Semiconductor luminescent element and method of manufacturing the same A semiconductor luminescent element includes: a base substrate; a ZnO luminescent layer formed on the base substrate; and a ZnO buffer layer doped with an impurity and formed between the base substrate and the ZnO luminescent layer....	09/10/2002
6407405	p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, ...	06/18/2002
6057561	Optical semiconductor element A ZnO thin film is fabricated on the c-surface of a sapphire substrate through use of a laser molecular beam epitaxy (MBE) method-which is effective for epitaxial growth of an oxide thin film through control at an atomic level. The thus-formed ZnO thin fi...	05/02/2000
5616937	Compound semiconductor luminescent device A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a cu...	04/01/1997
5538918	Method of fabricating a buried-ridge II-VI laser diode A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge....	07/23/1996
5513199	Blue-green laser diode A II-VI compound semiconductor laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers forming the pn junction include a first cladding layer of a first...	04/30/1996
5404027	Buried ridge II-VI laser diode A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge....	04/04/1995
5396103	Graded composition ohmic contact for P-type II-VI semiconductors A II-VI laser diode including a substrate, a device layer of p-type II-VI semiconductor, an electrode and an ohmic contact layer between the electrode and device layer. The ohmic contact layer comprises a graded composition semiconductor compound includin...	03/07/1995
5274269	Ohmic contact for p-type group II-IV compound semiconductors A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode ...	12/28/1993
5213998	Method for making an ohmic contact for p-type group II-VI compound semiconductors A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor ...	05/25/1993
5192419	Method for producing a zinc selenide blue light emitting device A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe cryst...	03/09/1993
5113233	Compound semiconductor luminescent device A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a cu...	05/12/1992
5099301	Electroluminescent semiconductor device An electroluminescent semiconductor device in which the drain of a MOSFET acts as the driver for a manganese doped zinc sulfide electroluminescent layer. The zinc sulfide layer is coated with a layer of metal which prevents the emission of light from the ...	03/24/1992
5097298	Blue light emitting display element A blue light emitting display element has a hetero p-n junction type light emitting layer formed between a semiconductor layer of a II-VI or III-V semiconducting compound having a wide energy bandgap and a highly electroconductive amorphous silicon type s...	03/17/1992
5045894	Compound semiconductor light emitting device Strained-layer superlattices are formed on a substrate by alternately and epitaxially laminating a plurality of first compound semiconductor layers each of which is composed of a II-Vi compound semiconductor and second compound semiconductor layers each o...	09/03/1991
4819058	Semiconductor device having a pn junction A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI elem...	04/04/1989
4783426	Method of making a Group II-VI compound semiconductor device by solution growth A semiconductor device made of a II-VI compound semiconductor and having a p type semiconductor crystal. The p type semiconductor crystal is one obtained by growing the II-VI compound semiconductor crystal by relying on a liquid phase crystal growth proce...	11/08/1988
4755856	Znse green light emitting diode A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent contain...	07/05/1988
4725563	ZnSe green light emitting diode A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent contain...	02/16/1988
4689125	Fabrication of cleaved semiconductor lasers A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place....	08/25/1987
4685979	Method of manufacturing a group II-VI compound semiconductor device having a pn junction A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting...	08/11/1987
4619718	Method of manufacturing a Group II-VI semiconductor device having a PN junction A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI elem...	10/28/1986

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Class 257/E33.019 - Comprising only Group II-VI compound (EPO)