Class 257/E33.017 - Characterized by doping material (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.015. This subclass
No. of patents: 22
Last issue date: 05/27/2008

Number	Title	Issue Date
7378695	Solid-state image pickup device and manufacturing method thereof A solid-state image pickup device is provided in which a pixel forming region 4 and a peripheral circuit forming region 20 are formed on the same semiconductor substrate, a first element isolation portion is formed by an element isolation layer 21	05/27/2008
6483861	Silicon thin film structure for optoelectronic devices and method for fabricating the same Disclosed are a silicon thin film structure for optoelectronic devices and a method for manufacturing the same. The silicon thin film structure for optoelectronic devices, comprises a multi-layered structure consisting of a plurality of structural units, ...	11/19/2002
6406930	Fabrication of visible light emitting device formed from wide band gap semiconductor doped with a rare earth element A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped w...	06/18/2002
6255669	Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped w...	07/03/2001
6072275	Light emitting element and flat panel display including diamond film A light emitting element and a flat panel display that includes the element has a diamond film, which can achieve a stable and strong light emission with low electricity consumption. The light emitting element has a multilayer structure with an optional b...	06/06/2000
6056868	Rare earth doping of porous silicon The present invention discloses the doping of rare earth elements into porous silicon, resulting in enhancement of luminescence. The doping is an electro-chemical process using constant voltage bias across the two electrodes in which the anode is porous s...	05/02/2000
5908303	Manufacturing method of light-emitting diode A manufacturing method of a light-emitting diode is provided. The light-emitting diode manufactured by the steps of coating solution containing p-type or n-type impurities on a porous silicon layer, thereby forming a p/n junction through a thermal treatme...	06/01/1999
5852346	Forming luminescent silicon material and electro-luminescent device containing that material A process is provided for forming a silicon material which exhibits room temperature photoluminescence and/or electroluminescence. It comprises the steps of implanting silicon ions into a silicon oxide (SiO2) substrate and subsequently annealin...	12/22/1998
5723348	Method of making a light-emitting device A light-emitting device, in which a film obtained by ion-implanting ions that can become a semiconductor material into an oxide film forms at least a part of a light-emitting layer....	03/03/1998
5667905	Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence...	09/16/1997
5580663	Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence...	12/03/1996
5541423	Monocrystalline diamond semiconductor device and several electronic components employing same A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamo...	07/30/1996
5538911	Manufacturing method for a diamond electric device An electric device such as a light emitting device utilizing a diamond film is described. The diamond film is partially doped with an impurity selected from Group IIb or VIb of the periodic table. The doping is performed with a patterned semiconductor fil...	07/23/1996
5500539	Method of depositing diamond and diamond light emitting device A method of depositing high quality diamond films and a light emitting device are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C--OH bond is intr...	03/19/1996
5389799	Semiconductor device Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and another SiC layer of a second conductivity type. At least one ...	02/14/1995
5106452	Method of depositing diamond and diamond light emitting device A method of depositing high quality diamond films and a light emitting device are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C--OH bond is intr...	04/21/1992
5107538	Optical waveguide system comprising a rare-earth Si-based optical device It has been discovered that co-doping of Er-doped Si with a light element such as C, N or F can result in substantially increased Er luminescence. A further increase in luminescence can result if, in addition, oxygen is present in the Si. Apparatus or sys...	04/21/1992
5077143	Silicon electroluminescent device An electroluminescent silicon device comprises a light emitting diode (10). The diode (10) includes a p+ semiconductor contact (42) and a n- layer (32), forming a p-n junction (43) therebetween. The n- layer (32) is car...	12/31/1991
5075764	Diamond electric device and manufacturing method for the same An electric device such as a light emitting device utilizing a diamond film is described. The diamond film is partially doped with an impurity selected from Group IIb or VIb of the periodic table. The doping is performed with a patterned semiconductor fil...	12/24/1991
5051785	N-type semiconducting diamond, and method of making the same N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon so...	09/24/1991
5034784	Diamond electric device on silicon A diamond electric device is described. The device comprises a diamond film deposited on a semiconductor substrate and an upper electrode. The electrical contact between the diamond film and the electrode is formed only through an intervening silicon semi...	07/23/1991
4827318	Silicon based light emitting devices An efficient solid state light emitting device wherein sulphur is used to provide isoelectronic centers in silicon which bind excitons which emit light at a wavelength of 1.32 microns (um) and are particularly adapted for use in integrated opto-electronic...	05/02/1989

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Class 257/E33.017 - Characterized by doping material (EPO)