Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 6569534 | Optical material and optical element using the same An optical material including a crystalline silicon and Fex Si2 in the form of dots, islands, or a film is provided. The Fex Si2 has a symmetrical monoclinic crystalline structure belonging to the P21... | 05/27/2003 |
| 5500539 | Method of depositing diamond and diamond light emitting device A method of depositing high quality diamond films and a light emitting device are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C--OH bond is intr... | 03/19/1996 |
| 5106452 | Method of depositing diamond and diamond light emitting device A method of depositing high quality diamond films and a light emitting device are described. The deposition is carried out in a reaction chamber. After disposing a substrate to be coated in the chamber, a carbon compound gas including a C--OH bond is intr... | 04/21/1992 |
| 5034784 | Diamond electric device on silicon A diamond electric device is described. The device comprises a diamond film deposited on a semiconductor substrate and an upper electrode. The electrical contact between the diamond film and the electrode is formed only through an intervening silicon semi... | 07/23/1991 |
| 4180825 | Heteroepitaxial deposition of GaP on silicon substrates A crack free layer of GaP is epitaxially deposited on a silicon phosphide surface of a silicon substrate having an (III) orientation. The silicon substrate is prebaked on a carbide coated susceptor with palladium diffused hydrogen at about 1200° C. and p... | 12/25/1979 |
| 3985590 | Process for forming heteroepitaxial structure A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal se... | 10/12/1976 |
