Class 257/E33.015 - Comprising only Group IV element (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.013. This subclass
No. of patents: 36
Last issue date: 07/24/2007

Number	Title	Issue Date
7247885	Carrier confinement in light-emitting group IV semiconductor devices In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in t...	07/24/2007
7148514	Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub...	12/12/2006
6632694	Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC...	10/14/2003
6340826	Infra-red light emitting Si-MOSFET A light emitting field effect transistor is proposed with a new extended drain region. The extension is doped with erbium or other rare-earth atoms. The erbium provides light-emitting centers in the indirect bandgap silicon substrate to enhance the radiat...	01/22/2002
6319427	Fast luminescent silicon There are provided mesoporous silica materials containing in their pores stabilized clusters of silicon atoms, of size 2 nanometers or less, and capable of photoluminescence to emit fast photons. They are prepared by chemical vapour deposition of silicon ...	11/20/2001
6288415	Optoelectronic semiconductor devices An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (ଲ-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 μm. Ph...	09/11/2001
6157047	Light emitting semiconductor device using nanocrystals A device structure provides improved efficiency of light emission from a light emitting element made of silicon while rendering such emission electrically controllable. Silicon in the light emitting element comprises fine microcrystals, which are miniatur...	12/05/2000
6111271	Optoelectronic device with separately controllable carrier injection means An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n+ region (16) embedded at the surface of an oppositely ...	08/29/2000
6072275	Light emitting element and flat panel display including diamond film A light emitting element and a flat panel display that includes the element has a diamond film, which can achieve a stable and strong light emission with low electricity consumption. The light emitting element has a multilayer structure with an optional b...	06/06/2000
6027666	Fast luminescent silicon There are provided mesoporous silica materials containing in their pores stabilized clusters of silicon atom, of size 2 nanometers or less, and capable of photoluminescence to emit fast photons. They are prepared by chemical vapor deposition of silicon or...	02/22/2000
5994720	Indirect bandgap semiconductor optoelectronic device An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n+ region (16) embedded at the surface of an oppositely ...	11/30/1999
5920078	Optoelectronic device using indirect-bandgap semiconductor material This invention relates to the field of semiconductor devices. Silicon-based semiconductor devices ordinarily lack desirable optical properties because silicon's small, indirect band gap causes electrons to emit radiation with negligible quantum efficiency...	07/06/1999
5851904	Method of manufacturing microcrystalline layers and their utilization The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a firs...	12/22/1998
5783498	Method of forming silicon dioxide film containing germanium nanocrystals The present invention provides a method of forming a silicon dioxide film containing germanium (Ge) nanocrystals, including the steps of (a) depositing Ge doped silicon dioxide on a substrate by means of atmospheric pressure chemical vapor deposition by w...	07/21/1998
5668382	Ohmic electrode and method for forming it An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistanc...	09/16/1997
5632812	Diamond electronic device and process for producing the same A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) ...	05/27/1997
5627386	Silicon nanostructure light-emitting diode The invention provides light sources which are easily compatible with standard silicon VLSI processing and can be located directly in the material of the silicon VLSI chip. P-type silicon substrate is processed to produce proturbances, the proturbances pr...	05/06/1997
5624705	Method of producing a device comprising a luminescent material Siloxene and siloxene derivatives are compatible with silicon and may be generated as epitaxial layer on a silicon monocrystal. This permits the production of novel and advantageous electroluminescent devices, such as displays, image converters, optoelect...	04/29/1997
5612548	Diamond light-emitting element A diamond light-emitting element capable of intense light emission at low operation voltage. A conductive substrate is disposed on a metallic plate such as copper to form an ohmic contact. A first diamond layer is formed on the conductive substrate. The b...	03/18/1997
5578379	Device comprising a luminescent material Siloxene and siloxene derivatives are compatible with silicon and may be generated as epitaxial layer on a silicon monocrystal. This permits the production of novel and advantageous electroluminescent devices, such as displays, image converters, optoelect...	11/26/1996
5538911	Manufacturing method for a diamond electric device An electric device such as a light emitting device utilizing a diamond film is described. The diamond film is partially doped with an impurity selected from Group IIb or VIb of the periodic table. The doping is performed with a patterned semiconductor fil...	07/23/1996
5442191	Isotopically enriched semiconductor devices A semiconductor structure including a single-crystal region composed of an isotopically enriched material, wherein the isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon; and a semic...	08/15/1995
5373172	Semiconducting diamond light-emitting element A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed o...	12/13/1994
5347147	Light emitting diamond device A light emitting electronic device has a substrate of transparent intrinsic diamond material with a p-type region formed in it by implantation of boron ions. Discrete transparent layers of diamond material are deposited over the p-type region, each with d...	09/13/1994
5315272	Light emitting tunnel diode oscillator A light emitting tunnel diode oscillator comprising a body of single crystalline material having a first portion n-doped and a second portion p-doped in such a way that the resulting p-n junction has the low voltage conductance characteristics of a tunnel...	05/24/1994
5144409	Isotopically enriched semiconductor devices A semiconductor structure including a single-crystal region composed of an isotopically enriched semiconductor material, and a semiconductor device formed in the isotopically enriched semiconductor region....	09/01/1992
5139970	Electric device and manufacturing method of the same An electric device comprises a crystalline film deposited on a substrate and an electrode formed on the film. The crystalline film consists of a number of colomnar crystals grown at right angles from the surface of the substrate. There are many grain boun...	08/18/1992
5077143	Silicon electroluminescent device An electroluminescent silicon device comprises a light emitting diode (10). The diode (10) includes a p+ semiconductor contact (42) and a n- layer (32), forming a p-n junction (43) therebetween. The n- layer (32) is car...	12/31/1991
5075764	Diamond electric device and manufacturing method for the same An electric device such as a light emitting device utilizing a diamond film is described. The diamond film is partially doped with an impurity selected from Group IIb or VIb of the periodic table. The doping is performed with a patterned semiconductor fil...	12/24/1991
5036373	Electric device with grains and an insulating layer An electric device comprises a crystalline film deposited on a substrate and an electrode formed on the film. The crystalline film consists of a number of colomnar crystal grown at right angles from the surface of the substrate. There are many grain bound...	07/30/1991
4982243	Schottky contact A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface whic...	01/01/1991
4952811	Field induced gap infrared detector A tunable infrared detector employing a vanishing band gap semimetal material which is provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities. The semimetal material may thus operate as ...	08/28/1990
4884112	Silicon light-emitting diode with integral optical waveguide The invention comprises integral all silicon light sources and 3-D optical waveguides which combine the functions of room temperature optical emission and optical signal routing. Several light emitting electrooptical silicon devices are herein disclosed. ...	11/28/1989
4730207	Non-single-crystal semiconductor light emitting device A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where mࣙ3) of non-single-crystal semiconductor layers M	03/08/1988
4694312	Non-single-crystal semiconductor light emitting device A non-single-crystal semiconductor light emitting device comprising a first non-single-crystal semiconductor layer of a first conductivity type; a non-single-crystal semiconductor intrinsic region formed in layers on the first non-single-crystal semicondu...	09/15/1987
4616244	Non-single-crystal semiconductor light emitting device A non-single-crystal semiconductor light emitting device is provided with a first electrode or a first laminate member of the first electrode and P (or N) type first non-single-crystal semiconductor layer formed on the first electrode, a non-single-crysta...	10/07/1986

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Class 257/E33.015 - Comprising only Group IV element (EPO)