Class 257/E33.012 - Multiple active regions between two electrodes (e.g., stacks) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.005. This subclass
No. of patents: 38
Last issue date: 01/29/2008

Number	Title	Issue Date
7323723	Semiconductor light-emitting device using phosphors for performing wavelength conversion A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from...	01/29/2008
7208337	Method of forming light emitting devices including forming mesas and singulating A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed fo...	04/24/2007
6703253	Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such method A method for producing a semiconductor light emitting device, including at least one first column-like multi-layer structure provided on a substrate and containing nitride-based semiconductor compound semiconductor layers represented by the general formul...	03/09/2004
6696313	Method for aligning quantum dots and semiconductor device fabricated by using the same A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D)...	02/24/2004
6693306	Structure of a light emitting diode and method of making the same A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is f...	02/17/2004
6677617	Semiconductor LED composed of group III nitrided emission and fluorescent layers This invention provides a light-emitting diode which is capable of extracting white light, manufactured readily and highly reliable. The light-emitting diode is fabricated by laminating a buffer layer 2, an Si (silicon)-doped GaN fluorescent layer 3, an n...	01/13/2004
6663785	Broad spectrum emitter array and methods for fabrication thereof Embodiments of the present invention are directed to method of fabrication of a broadband emitter array. Embodiments of the present invention may grown a first set of emitters possessing a first quantum well characteristic (e.g., quantum well thickness or...	12/16/2003
6657236	Enhanced light extraction in LEDs through the use of internal and external optical elements This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorab...	12/02/2003
6639354	Light emitting device, production method thereof, and light emitting apparatus and display unit using the same An n-type cladding layer formed of a non-single crystal body of n-type AlGaN, a light emitting layer containing a plurality of micro-crystals made from ZnO, and a p-type cladding layer formed of a non-single crystal body of p-type BN are sequentially stac...	10/28/2003
6620643	Light-emitting device using group III nitride compound semiconductor A group III nitride compound semiconductor light-emitting device provides a multiple quantum well (MQW) active layer formed on an intermediate layer. The MQW active layer may include, for example, five semiconductor layers having a thickness of approximat...	09/16/2003
6590233	Semiconductor light emitting device The semiconductor light emitting device has the first semiconductor light emission element 13 for emitting color light in the first wave length range, the second semiconductor light emission element 14 for emitting color light in the second wave length ra...	07/08/2003
6573535	Semiconductor light-emitting element In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made o...	06/03/2003
6573537	Highly reflective ohmic contacts to III-nitride flip-chip LEDs An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than...	06/03/2003
6569534	Optical material and optical element using the same An optical material including a crystalline silicon and Fex Si2 in the form of dots, islands, or a film is provided. The Fex Si2 has a symmetrical monoclinic crystalline structure belonging to the P21...	05/27/2003
6570190	LED having angled sides for increased side light extraction The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ...	05/27/2003
6563141	Optical devices A solid-state, surface-emitting, optical device such as a light emitting diode (LED) or vertical cavity surface emitting laser (VCSEL) has a body of optical gain medium overlying a high reflectivity distributed BRAGG reflector (DBR) mirror which is carrie...	05/13/2003
6548834	Semiconductor light emitting element A semiconductor light emitting element is proposed that improves a light extraction efficiency without requiring any complicated processes and techniques. The semiconductor light emitting element includes an active layer for emitting first light by curren...	04/15/2003
6544808	Light-emitting device with quantum dots and holes, and its fabricating method A method is provided for forming quantum holes of nanometer levels. In an ion beam scanner, ions are projected from an ion gun onto a semiconductor substrate. During the projection, ions are focused into an ion beam whose focal point is controlled to dete...	04/08/2003
6514782	Method of making a III-nitride light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-elec...	02/04/2003
6445009	Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the devi...	09/03/2002
6410942	Enhanced light extraction through the use of micro-LED arrays This invention describes new LED structures that provide increased light extraction efficiency. The new LED structures include arrays of electrically interconnected micro-LEDs that have and active layer sandwiched between two oppositely doped layer. The m...	06/25/2002
6368889	Variable-wavelength light-emitting device and method of manufacture An object is to provide a variable-wavelength light-emitting element which employs a direct gap semiconductor having a magnetic moment for a semiconductor layer serving as an active layer, so that the semiconductor has reduced crystal distortion and stabl...	04/09/2002
6323063	Forming LED having angled sides for increased side light extraction The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ...	11/27/2001
6303404	Method for fabricating white light emitting diode using InGaN phase separation Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking advantage of the spinodal decomposition of the ternary comp...	10/16/2001
6278134	Bi-directional unipolar semiconductor light source A bi-directional semiconductor light source is formed that provides emission in response to either a positive or negative bias voltage. In a preferred embodiment with an asymmetric injector region in a cascade structure, the device will emit at a first wa...	08/21/2001
6236060	Light emitting structures in back-end of line silicon technology A light emitting device is disclosed comprising a bottom layer of electrically conductive material. A block of electrically insulating material is disposed on the bottom layer. At least a portion of the block is optically transparent. A top layer of elect...	05/22/2001
6229160	Light extraction from a semiconductor light-emitting device via chip shaping The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ...	05/08/2001
5925897	Optoelectronic semiconductor diodes and devices comprising same An optoelectronic semiconductor diode is made from a layer of many small individual semiconductor particles containing doping junctions positioned between two contact surfaces mechanically supported by substrates. In the preferred embodiment, the particle...	07/20/1999
5898185	Hybrid organic-inorganic semiconductor light emitting diodes This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode structure t...	04/27/1999
5895932	Hybrid organic-inorganic semiconductor light emitting diodes This invention provides a novel hybrid organic-inorganic semiconductor light emitting diode. The device consists of an electroluminescent layer and a photoluminescent layer. The electroluminescent layer is an inorganic GaN light emitting diode structure t...	04/20/1999
5610413	Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cl...	03/11/1997
5231049	Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions A novel display screen structure and method of manufacturing such screens for use, for example, in large screen television displays. The process of the present invention is one which can be accomplished with no new materials, no critical geometric require...	07/27/1993
5102824	Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions A novel display screen structure and method of manufacturing such screens for use, for example, in large screen television displays. The process of the present invention is one which can be accomplished with no new materials, no critical geometric require...	04/07/1992
4984034	Non-single-crystalline light emitting semiconductor device matrix with insulation A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	01/08/1991
4868614	Light emitting semiconductor device matrix with non-single-crystalline semiconductor A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	09/19/1989
4703219	Optical device for concentrating the light radiation emitted by a light emitting diode, and a light emitting diode comprising a device of this nature A device for optically coupling a light emitting diode and a radiation pickup such as an optical fiber. The light emitting diode element includes at least one emissive section within an active layer where a part of the light irradiation does not emerge fr...	10/27/1987
4547396	Method of making a laser array A phase-locked laser array including a plurality of closely spaced channels in the surface of the substrate with lands therebetween with the laser oscillation occurring in a cavity region over each of the channels. A broad-area electrical contact provides...	10/15/1985
4527179	Non-single-crystal light emitting semiconductor device A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	07/02/1985

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Class 257/E33.012 - Multiple active regions between two electrodes (e.g., stacks) (EPO)