Class 257/E33.004 - Comprising amorphous semiconductor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.003. This subclass
No. of patents: 39
Last issue date: 09/16/2008

Number	Title	Issue Date
7425491	Nanowire transistor with surrounding gate One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment of the method, a pillar of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy process is performed to crys...	09/16/2008
7390727	Polycrystalline silicon film containing Ni The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni...	06/24/2008
7339188	Polycrystalline silicon film containing Ni The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni...	03/04/2008
7294857	Polysilicon thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; form...	11/13/2007
7115448	Thin film transistor, liquid crystal display device and method of fabricating the thin film transistor The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film 2, a gate...	10/03/2006
7081400	Method for manufacturing polysilicon layer and method for manufacturing thin film transistor thereby A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon la...	07/25/2006
6699371	Fabrication method of blue light emitting ZnO thin film phosphor Substrate that is vapor-deposited with dopant-added ZnO thin film is loaded into a heat-treating chamber, and heat-treated quickly under gas atmosphere to activate the dopant. A thin film phosphor having new luminescence peak can be fabricated by quick-he...	03/02/2004
6602731	Manufacturing of a thin inorganic light emitting diode Nanoparticle dispersions of ZnS doped with a luminescent center and of Cux S are prepared together or separately by precipitation from aqueous solutions. When such dispersions are coated between conductive electrodes a Thin Film Inorganic Light...	08/05/2003
6589362	Zinc oxide semiconductor member formed on silicon substrate The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen fluoride (HF) diluted with pure water to 10% (process(1)). The ...	07/08/2003
6486044	Band gap engineering of amorphous Al-Ga-N alloys A semiconductor structure and a scheme for forming a layer of amorphous material on a semiconductor substrate are provided. In accordance with one embodiment of the present invention, a semiconductor structure is provided comprising an amorphous alloy for...	11/26/2002
6399225	Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same A luminescent substance contains silicon and nitrogen as major components and has an amorphous structure. The silicon content of the luminescent substance is greater than the stoichiometric silicon content of Si3 N4, and the luminous...	06/04/2002
6288417	Light-emitting devices including polycrystalline gan layers and method of forming devices Polycrystalline group III-nitride semiconductor materials such as GaN and alloys of GaN and other group III-nitrides are deposited as layers on polycrystalline and non-crystalline substrates. The polycrystalline GaN layers can be formed by solid-phase cry...	09/11/2001
6236061	Semiconductor crystallization on composite polymer substrates A structure and methodology for providing electronic devices comprised of semiconductor materials deposited and crystallized using a pulsed laser source on oxide and/or metal layers on polymeric and polymer composite substrates of low coefficient of therm...	05/22/2001
5986285	Group III-V amorphous and microcrystalline optical semiconductor including hydrogen, and method of forming thereof The present invention provides an amorphous optical semiconductor characterized by having a ratio of the sum total number of atoms of group III elements to the number of nitrogen atoms, in the range of 1:0.5 to 1:2 while including a hydrogen. Preferable i...	11/16/1999
5976398	Process for manufacturing semiconductor, apparatus for manufacturing semiconductor, and amorphous material A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element...	11/02/1999
5656823	Amorphous semiconductor thin film light emitting diode An amorphous semiconductor thin film light emitting diode comprising of a first electrode metal sheet substrate, amorphous semiconductor layers and a second optically transparent electrode. The first electrode metal sheet substrate acts as the support of ...	08/12/1997
5285078	Light emitting element with employment of porous silicon and optical device utilizing light emitting element A carrier injection type light emitting element with employment of a pn junction established between porous silicon and a semiconductor having a conductivity type different from that of the porous silicon, and also optical devices such as an opto-optical ...	02/08/1994
5210766	Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors Scanning laser crystallization of p- and n- type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. Th...	05/11/1993
5200668	Luminescence element This invention relates to an injection type thin film luminescence element having a high luminance and a high stability characterized in having two electrode layers at least one of which is transparent or translucent and having between these two electrode...	04/06/1993
5182228	Method of manufacturing a semiconductor light-emitting device In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried laye...	01/26/1993
5162239	Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors Scanning laser crystallization of p- and n-type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. The...	11/10/1992
5151383	Method for producing high energy electroluminescent devices A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a ...	09/29/1992
5097298	Blue light emitting display element A blue light emitting display element has a hetero p-n junction type light emitting layer formed between a semiconductor layer of a II-VI or III-V semiconducting compound having a wide energy bandgap and a highly electroconductive amorphous silicon type s...	03/17/1992
5084893	Semiconductor light-emitting device In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried laye...	01/28/1992
5034795	Electrically insulating substrate Disclosed is a substrate particularly designed to bear an active structure made according to thin-film technology. The advantage of the disclosed substrate is that it can be made in large sizes and at low cost. To this end, the substrate 1 has an soda-lim...	07/23/1991
4987460	Light emitting device A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected elec...	01/22/1991
4984034	Non-single-crystalline light emitting semiconductor device matrix with insulation A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	01/08/1991
4980553	Radiological image detector A radiological image detector of the type formed by a matrix of photosensitive elements, associated with a light source, enables a resetting of the voltages at the terminals of the photosensitive elements, the light source and the photosensitive matrix be...	12/25/1990
4920387	Light emitting device A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the lumin...	04/24/1990
4914490	Non-single crystal electroluminescent device A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms laminated and having a homojunction, and at least a pair of electrodes connected elec...	04/03/1990
4882295	Method of making a double injection field effect transistor Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of...	11/21/1989
4868614	Light emitting semiconductor device matrix with non-single-crystalline semiconductor A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	09/19/1989
4860069	Non-single-cry stal semiconductor light emitting device A non-single-crystal semiconductor light emitting device comprising a first electrode, a first conductiveity type non-single-crystal semiconductor layer formed on the first electrode, a non-single-crystal semiconductor region formed on the first non-singl...	08/22/1989
4730207	Non-single-crystal semiconductor light emitting device A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where mࣙ3) of non-single-crystal semiconductor layers M	03/08/1988
4695859	Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits A light emitting, thin film p-i-n diode characterized by aligned valence bands at the p-i interface and aligned conduction bands at the n-i interface and preferably including a layer of p-doped microcrystalline semiconductor alloy material. A photonic cir...	09/22/1987
4694312	Non-single-crystal semiconductor light emitting device A non-single-crystal semiconductor light emitting device comprising a first non-single-crystal semiconductor layer of a first conductivity type; a non-single-crystal semiconductor intrinsic region formed in layers on the first non-single-crystal semicondu...	09/15/1987
4616244	Non-single-crystal semiconductor light emitting device A non-single-crystal semiconductor light emitting device is provided with a first electrode or a first laminate member of the first electrode and P (or N) type first non-single-crystal semiconductor layer formed on the first electrode, a non-single-crysta...	10/07/1986
4527179	Non-single-crystal light emitting semiconductor device A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed ...	07/02/1985
4069492	Electroluminescent semiconductor device having a body of amorphous silicon A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device....	01/17/1978

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Class 257/E33.004 - Comprising amorphous semiconductor (EPO)