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| Number | Title | Issue Date |
| 7442589 | System and method for uniform multi-plane silicon oxide layer formation for optical applications Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and... | 10/28/2008 |
| 7439110 | Strained HOT (hybrid orientation technology) MOSFETs A strained HOT MOSFET fabrication method. The MOSFET fabrication method includes providing a semiconductor structure which includes (a) a first semiconductor layer having a first crystallographic orientation, (b) a buried insulating layer on top of the first semicon... | 10/21/2008 |
| 7436873 | Optical device and semiconductor laser oscillator In an optical device, a slab layer includes an active layer sandwiched between cladding layers. The slab layer has a periodic refractive index profile structure in a two-dimensional plane, as a two-dimensional slab photonic crystal structure, and a linear defect reg... | 10/14/2008 |
| 7384810 | Image display device and method for manufacturing the same Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-cr... | 06/10/2008 |
| 7368763 | Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a... | 05/06/2008 |
| 7319258 | Semiconductor-on-insulator chip with<100>-oriented transistors A semiconductor-on-insulator device includes a silicon active layer with a crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a crystal direction. Transistors oriented on a direction are formed on ... | 01/15/2008 |
| 7285799 | Semiconductor light emitting devices including in-plane light emitting layers A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may inc... | 10/23/2007 |
| 7256109 | Isotropic polycrystalline silicon A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of... | 08/14/2007 |
| 7250640 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenish... | 07/31/2007 |
| 7173289 | Light emitting diode structure having photonic crystals A light emitting diode (LED) structure includes a substrate with a surface and cylindrical photonic crystals, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer and a second electrode. The fir... | 02/06/2007 |
| 7129107 | Process for producing a semiconductor light-emitting device Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a p... | 10/31/2006 |
| 7129514 | Image display unit Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a p... | 10/31/2006 |
| 7129515 | Lighting system Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a p... | 10/31/2006 |
| 7122826 | Image display unit Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a p... | 10/17/2006 |
| 7122825 | Lighting system Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a p... | 10/17/2006 |
| 7122394 | Process for producing a semiconductor light-emitting device Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a p... | 10/17/2006 |
| 7084081 | Display device and method of manufacturing the same A display device includes a display area composed of pixels in a matrix. Each pixel has a light-emitting element and a driving element to supply a driving current to the light-emitting element. The driving element includes a thin film transistor with a semiconductor... | 08/01/2006 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6685773 | Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, includes the steps of: providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a orienta... | 02/03/2004 |
| 6680492 | Semiconductor light emitting device and method for producing the same A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium... | 01/20/2004 |
| 6653663 | Nitride semiconductor device The nitride semiconductor device includes: a substrate made of a III-V group compound semiconductor containing nitride; and a function region made of a III-V group compound semiconductor layer containing nitride formed on a main surface of the substrate. ... | 11/25/2003 |
| 6649288 | Nitride film A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant "c" of the c-axis of the Group III nitri... | 11/18/2003 |
| 6635901 | Semiconductor device including an InGaAIN layer A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of Inx Gay Alz ... | 10/21/2003 |
| 6608328 | Semiconductor light emitting diode on a misoriented substrate A light emitting diode is made by a compound semiconductor in which light is emitted from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the... | 08/19/2003 |
| 6569704 | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well l... | 05/27/2003 |
| 6525345 | Semiconductor photonic device A semiconductor photonic device includes a Z-cut quartz substrate and a compound semiconductor layer presented by Inx Gay Alz N (where x+y+z=1, 0ࣘx ࣘ1, 0ࣘyࣘ1, and 0ࣘzࣘ1) formed on the Z-cut quartz substrate.... | 02/25/2003 |
| 6515313 | High efficiency light emitters with reduced polarization-induced charges Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is ac... | 02/04/2003 |
| 6465812 | Semiconductor light emitting device A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of Alx Ga1-x As (0ࣘxࣘ1) provided... | 10/15/2002 |
| 6465809 | Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx (Ga1-y Aly)1-x P on a GaAs substrate 12 to form an epi-wafer having an n-... | 10/15/2002 |
| 6459712 | Semiconductor devices An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insu... | 10/01/2002 |
| 6437363 | Semiconductor photonic device A semiconductor photonic device includes a substrate having a cleavage plane perpendicular to a principal plane thereof; a ZnO film on the substrate; and a compound semiconductor layer expressed by Inx Gay Alz N (x+y+z=1, ... | 08/20/2002 |
| 6377596 | Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insu... | 04/23/2002 |
| 6376866 | GaN semiconductor light emitting device having a group II-VI substrate A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium... | 04/23/2002 |
| 6350996 | Light emitting diode device A light emitting diode device includes a light emitting diode and a non-linear element which are arranged on a substrate. The non-linear element is composed of an organic compound layer.... | 02/26/2002 |
| 6252255 | Crystal growth method for nitride semiconductor, nitride light emitting device, and method for producing the same A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, includes the steps of: providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a orient... | 06/26/2001 |
| 6239453 | Optoelectronic material, device using the same, and method for manufacturing optoelectronic material This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application ... | 05/29/2001 |
| 6229151 | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well l... | 05/08/2001 |
| 6165809 | Method of fabricating light emitting diodes According to a light emitting diode fabricating method, when a top surface of an n-type GaAs substrate is inclined at an angle θ with respect to a (1 0 0) plane, a front electrode is formed on a surface shaped portion of a current diffusing layer of a th... | 12/26/2000 |
| 6100106 | Fabrication of nitride semiconductor light-emitting device A process for producing a semiconductor light-emitting device, which comprises forming, on a substrate by crystal growth, a gallium nitride type compound semiconductor layer having a crystal face (0,0,0,1) which can be utilized as the end surface of an op... | 08/08/2000 |
| 6080599 | Semiconductor optoelectric device and method of manufacturing the same The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by deposit... | 06/27/2000 |
