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| Number | Title | Issue Date |
| 7256436 | Thin-film field-effect transistors and making method In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal l... | 08/14/2007 |
| 7164164 | Display device and photoelectric conversion device A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements in... | 01/16/2007 |
| 7135750 | Photodiode array having reduced dead space A photodiode array includes a first photodiode and at least a second photodiode. The first photodiode includes a first active area, a first anti-reflective coating area, and a first residual polysilicon ring. The first anti-reflective coating area and the first resi... | 11/14/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 6803249 | Method of making an integrated photodetector in which a silicon nitride layer forms an anti-reflective film and part of multi-layer insulator within transistor structures A photodetector is integrated on a single semiconductor chip with bipolar transistors including a high speed poly-emitter vertical NPN transistor. The photodetector includes a silicon nitride layer serving as an anti-reflective film. The silicon nitride layer and ox... | 10/12/2004 |
| 6639679 | Integrated wavelength monitor An integrated wavelength monitor and a method for obtaining such a device are disclosed. The device suitable for integration into a laser semiconductor laser module for fiber optic communication can be made in the following way: An interference filter is ... | 10/28/2003 |
| 6606157 | Detection of hazardous airborne fibres A fibre detector assembly comprising: (i) a scattering chamber body; (ii) means for drawing airborne particles through said body chamber, said means being adapted such the the particles tend to travel in single file with the longitudinal axis of particles with... | 08/12/2003 |
| 6573578 | Photo semiconductor integrated circuit device and optical recording reproducing apparatus A photo semiconductor integrated circuit device has a photodiode portion and amplifier portion, each portion having a buried layer. The impurity concentration and/or depth of the buried layer for the photodiode portion is lower than that of the buried lay... | 06/03/2003 |
| 6573488 | Semiconductor position sensitive detector A plurality of resistive regions constituting a resistive region gradually increase in width from one end to the other end and have substantially the same resistivity. If, therefore, this semiconductor position sensitive detector is placed such that charg... | 06/03/2003 |
| 6459109 | Semiconductor position sensor A semiconductor position sensor functions as a PSD or as a two-part split PD or the like, based on control of disconnection/connection of basic, electroconductive strips by controlling a voltage of gate electrode. This semiconductor position sensor does n... | 10/01/2002 |
| 6444973 | Method and apparatus for improving the accuracy of a region-based light detector A detection apparatus and method for detecting the direction to a light source. The detection apparatus comprises a strobe lamp for emitting a high intensity beam of light and a region-based detector, e.g., a quadrant light detector, for receiving a porti... | 09/03/2002 |
| 6404031 | Transparent semiconductor light-receiving element and manufacturing method thereof If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confi... | 06/11/2002 |
| 6380603 | Photosensitive device with internal circuitry that includes on the same substrate A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning... | 04/30/2002 |
| 6335523 | Semiconductor dark image position sensitive device A semiconductor dark image position sensing device comprises a photoelectric layer generating a photoelectric current in a portion where light is input in response to intensity of the light input, a resistive element layer into which the photoelectric cur... | 01/01/2002 |
| 6252286 | Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element When a light is irradiated on and near separated portions of a light-receiving element, a frequency characteristic grows worse. According the present invention, a light-receiving element is formed on a semiconductor substrate by a junction portion of a fi... | 06/26/2001 |
| 6114740 | Circuit-integrating light-receiving element The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor la... | 09/05/2000 |
| 6049118 | Circuit built-in light-receiving element A circuit built-in light-receiving element includes a buried diffusion layer of the second conductivity type, a buried diffusion layer of the first conductivity type, an epitaxial layer of the second conductivity type, a diffusion layer of the first condu... | 04/11/2000 |
| 6034765 | Contactless position and displacement measuring device A contactless position and displacement measuring device includes at least one light source and at least one photosensor adapted to move relative to each other. When illuminated by a light beam emitted by the light source the photosensor generates at leas... | 03/07/2000 |
| 5969338 | Light-received position detecting circuit and distance detecting apparatus using the same A light-received position detecting circuit includes a light receiving portion 10 formed by plural photodiodes arranged side by side for detecting light to generate a photoelectric current, and a resistor group RR formed by plural resistors RR1 to RRn-1 c... | 10/19/1999 |
| 5790255 | Transparent light beam detectors A system of partially transparent light beam detectors that allow passage of the light beam through the detector allows multiple detectors that use the same reference light beam. Transparent detectors can be position sensitive detectors (PSD), photodiode ... | 08/04/1998 |
| 5777352 | Photodetector structure A photodetector that incorporates at least two photosensitive regions (separated by at least one physical gap) of a first semiconductor type with the at least two photosensitive regions being supported on a substrate and acting as first terminals of the p... | 07/07/1998 |
| 5717201 | Double four-quadrant angle-position detector A double four-quadrant angle position detector is disclosed. The angle position detector comprises a first orientation detector, a second orientation detector, and a detecting means. The first orientation detector is composed of two pairs of photo-detecti... | 02/10/1998 |
| 5698453 | Combined semiconductor thin film pinhole and semiconductor photodetectors and method of manufacture A thin-film semiconductor pinhole component with monolithically integrated position-sensing photodetectors is herein referred to as a Position Sensitive Pinhole (PSP). Another embodiment is also discussed where a PSP is integrated onto a platform with con... | 12/16/1997 |
| 5600173 | Semiconductor device capable of detecting a light position A semiconductor position sensitive detector has an epitaxial layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type. A first diffusion layer of the first conductivity type is formed in said epitaxial layer so ... | 02/04/1997 |
| 5578837 | Integrating hyperacuity sensors and arrays thereof Sensor elements which are capable of sensing illumination edges with subpixel accuracy are described. The sensor elements include a plurality of conductive storage nodes and a plurality of collection electrodes which are in a low resistance, touching rela... | 11/26/1996 |
| 5567976 | Position sensing photosensor device photosensor device (41) having tapered photodiodes (53, 55) that are interdigitated and which is compatible with typical ASIC, CMOS and BiCMOS processes. A left side photodiode array of tapered regions (53) of a first conductivity type is disposed into an... | 10/22/1996 |
| 5559331 | Split-ring infrared detector A resonant, photoconductive detector for infrared radiation in which a reduced-volume pattern of the photoconductor permits impedance-matching to free space. The photoconductor pattern is a split-ring pattern, typically made of HgCdTe, which is virtually ... | 09/24/1996 |
| 5547879 | Method of making position sensing photosensor device A photosensor device (41) having tapered photodiodes (53, 55) that are interdigitated and which is compatible with typical ASIC, CMOS and BiCMOS processes. A left side photodiode array of tapered regions (53) of a first conductivity type is disposed into ... | 08/20/1996 |
| 5536964 | Combined thin film pinhole and semiconductor photodetectors A thin-film semiconductor pinhole component with monolithically integrated position-sensing photodetectors is herein referred to as a Position Sensitive Pinhole (PSP). Another embodiment is also discussed where a PSP is integrated onto a platform with con... | 07/16/1996 |
| 5525828 | High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MS... | 06/11/1996 |
| 5517017 | Photosensor for detecting the position of incident light in two dimensions using a pair of film resistors and a photoconductive element sandwiched therebetween A position detection element 4 is formed by sequentially depositing an X-axis resistor film 5, a photoconductive film 6 and a Y-axis resistor film 7 on one surface of a glass substrate 2 which is a transparent member. Further, a light screening film 3 is ... | 05/14/1996 |
| 5396060 | Quadrant detector arrangement having integral light channels A quadrant detector arrangement (10) includes a quadrant detector (12) having a photosensitive surface (28) and a plurality of light channels (14) extending therethrough. Light from a light source (16) is collimated by a collimating optical element (18) a... | 03/07/1995 |
| 5324929 | Device for detecting position and intensity of light and position detecting element to be employed therein A device for detecting direction, height and intensity of a light which facilitates detection and provides high accuracy. The device includes a glass substrate, on which a resistant layer for detecting the X coordinate position, a photoconductive layer ut... | 06/28/1994 |
| 5247186 | Integrated optical displacement sensor An integrated optical displacement sensor for measuring displacement of a sample, comprises a semiconductor substrate, laser for generating a laser beam, two micro-lens for focusing the laser beam generated from the laser on a surface of the sample, and a... | 09/21/1993 |
| 5204520 | Avalanche photodiode array integrated with etched silicon divider An avalanche photodiode array comprising a plurality of photosensitive regions in a light sensitive body with each photosensitive region having a semiconductor junction. Between said photosensitive regions, there are a plurality of low response regions se... | 04/20/1993 |
| 5200819 | Multi-dimensional imaging system for endoscope An image acquisition system employs elemental and/or lateral effect detectors in conjunction with an optical scanner which provides a beam of radiation tracing out a raster to illuminate an object. The system generates an electrical signal which is proces... | 04/06/1993 |
| 5200838 | Lateral effect imaging system An image acquisition system employs spaced lateral effect diodes for acquiring signals which are processed to generate signals indicative of a three dimensional image of an object. An endoscope is adapted for operation in association with an optical scann... | 04/06/1993 |
| 5177558 | Wheel alignment apparatus A wheel alignment apparatus (10) for measuring the toe angles of the wheels (42) of a vehicle such that the wheels (42) may be properly aligned, including vehicles whose rear axle (20) and front axle (22) are of unequal lengths. The wheel alignment appara... | 01/05/1993 |
| 5172685 | Endoscope and video laser camera system therefor An endoscope is adapted for operation in association with an optical scanner which generates a beam of radiation tracing out a raster. The endoscope employs at least one optical channel comprising a bundle of coherent flexible optical fibers. Elemental ph... | 12/22/1992 |
| 5168321 | Doped-germanium sensor for use in a system to control the alignment of a CO2 laser beam A photoconductive sensor responsive to a CO2 laser beam. The sensor comprises a silver-doped germanium semiconductor. The silver dopant changes the conductive characteristics of the semiconductor which results in the doped germanium semiconduct... | 12/01/1992 |
