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| Number | Title | Issue Date |
| 6670595 | Photosensor and photosensor system A photosensor array is provided with one or more semiconductor layers having carrier generating regions for generating carriers by incident exciting light, and the positions of the carrier generating regions are set arbitrarily so as to equalize the balan... | 12/30/2003 |
| 6420707 | Infra-red detector An infra-red detector (10) comprises a detector region (38) and a collector region separated by a barrier region. Operation of these regions is controlled by potentials applied to respective gate electrodes (30, 34, 32), insulated from the detector, barri... | 07/16/2002 |
| 6214684 | Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator To form a high-quality insulating layer at a low temperature, a semiconductor layer is formed on an insulating surface of an insulating substrate, and the semiconductor layer is selectively modified by an excimer laser irradiated from a surface opposing t... | 04/10/2001 |
| 6140666 | Thin film semiconductor device with a semiconductor large including crystals of an average grain size with a range of 50-350-Å A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the ... | 10/31/2000 |
| 6043508 | Photodetector involving a MOSFET having a floating gate A photodetector comprising a photoemissive surface capable of liberating photoelectrons. Photoelectrons are detected by a MOSFET having a floating gate, which is suitably charged before measurement in such a way that photoelectrons can cause a change in c... | 03/28/2000 |
| 6040592 | Well to substrate photodiode for use in a CMOS sensor on a salicide process An image sensor having a well-to-substrate diode as the photodetector. In a preferred embodiment, a modern salicided (CMOS) process is utilized to manufacture the image sensor. The field oxide region above the diode junction is transparent to visible ligh... | 03/21/2000 |
| 5942775 | Photosensing device with improved spectral response and low thermal leakage A photosensing device is provided which has a photojunction structure that includes a junction of a photodiode and a body-junction of a photo-capacitor operating in an inversion mode. The photojunction structure is fabricated with standard complementary M... | 08/24/1999 |
| 5920092 | Active type photoelectric conversion device, method for fabricating the same, and active type solid-state imaging device An active type photoelectric conversion device includes a pixel having a photoelectric conversion area and a gate area which are formed in a surface portion of a semiconductor substrate of a first conductivity type. The photoelectric conversion area inclu... | 07/06/1999 |
| 5861645 | Amplifying type solid-state imaging device and amplifying type solid-state imaging apparatus An amplifying type solid-state imaging device having a transistor formed on a semiconductor base and a charge release portion which stores a signal charge which is generated by light incident on the transistor and outputs a change of an electrical signal ... | 01/19/1999 |
| 5847422 | MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data A MOS-based active pixel sensor cell utilizes the parasitic bipolar action of the cell to produce a horizontal current in lieu of the vertical image current associated with conventional bipolar-based active pixel sensor cells. Image data is collected duri... | 12/08/1998 |
| 5835141 | Single-polysilicon CMOS active pixel image sensor A single-polysilicon active pixel, methods for operating and making same, and an imaging device employing same are disclosed. The single-polysilicon active pixel comprises a photo site located on a substrate for generating and storing charge carriers, the... | 11/10/1998 |
| 5635407 | HGCDTE S-I-S two color infrared detector A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integ... | 06/03/1997 |
| 5583570 | Photoelectric conversion system A photosensor formed on an insulating substrate has a transparent top gate electrode arranged on the upper side of a semiconductor layer for photoelectric conversion and a bottom gate electrode arranged on the lower side of the semiconductor layer. If lig... | 12/10/1996 |
| 5576763 | Single-polysilicon CMOS active pixel The single-polysilicon active pixel comprises a photo site located on a substrate for generating and storing charge carriers, the charge carriers being generated from photonic energy incident upon the photo site and semiconductor substrate, a photo gate, ... | 11/19/1996 |
| 5576555 | Thin film semiconductor device A thin film semiconductor device includes a gate electrode, a gate insulating electrode, a thin film semiconductor layer, an ohmic layer, source and drain electrodes, and a protective layer. The protective layer contains an impurity for controlling conduc... | 11/19/1996 |
| 5463420 | Photoelectric conversion system A photosensor formed on an insulating substrate has a transparent top gate electrode arranged on the upper side of a semiconductor layer for photoelectric conversion and a bottom gate electrode arranged on the lower side of the semiconductor layer. If lig... | 10/31/1995 |
| 5461419 | Photoelectric conversion system A plurality of photosensors are formed on an insulation substrate in a matrix fashion. Each of the photosensors includes a photoelectric conversion semiconductor, first and second gate electrodes, a drain electrode and a source electrode. A signal line is... | 10/24/1995 |
| 5352614 | Method of manufacturing a thin film semiconductor device A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the ... | 10/04/1994 |
| 5317174 | Bulk charge modulated device photocell A bulk charge modulated MOSFET for sensing light comprising a semiconductor substrate with a gate region of a first conductivity type formed in the substrate. The gate region forms a potential well for carriers of the first conductivity type. The well is ... | 05/31/1994 |
| 5283207 | Photoconductive material and photosensor employing the photoconductive material A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an... | 02/01/1994 |
| 5200634 | Thin film phototransistor and photosensor array using the same A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor ... | 04/06/1993 |
| 5196911 | High photosensitive depletion-gate thin film transistor A thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has a accumulation gate on the bottom of the active semiconductor layer and a transpar... | 03/23/1993 |
| 5184200 | Thin film semiconductor device with particular grain size A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the ... | 02/02/1993 |
| 5155567 | Amorphous photoconductive material and photosensor employing the photoconductive material A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an... | 10/13/1992 |
| 5150181 | Amorphous thin film semiconductor device with active and inactive layers A film semiconductor device comprises at least active semiconductor layer, inactive semiconductor layer, ohmic layer and metal layer respectively laminated sequentially one after another on the substrate. Electrodes are formed by the ohmic layer and the m... | 09/22/1992 |
| 5083175 | Method of using offset gated gap-cell thin film device as a photosensor A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport la... | 01/21/1992 |
| 5075237 | Process of making a high photosensitive depletion-gate thin film transistor Disclosed is a process for making a thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has an accumulation gate on the bottom of the active... | 12/24/1991 |
| 5013670 | Photoelectric converter A photoelectric conversion device includes a light transmissive substrate having a deposition surface and a bottom surface. The bottom surface receives light and passes it through the substrate. A heterogeneous deposition surface is formed on the substrat... | 05/07/1991 |
| 5008206 | Method for making a photoelectric conversion device using an amorphous nucleation site A photoelectric conversion apparatus comprising a transistor having a main electrode area of one conductive type semiconductor and a control electrode area of an opposite conductive type semiconductor, and a capacitor for controlling the potential of the ... | 04/16/1991 |
| 4990460 | Fabrication method for thin film field effect transistor array suitable for liquid crystal display In a method of fabricating thin film field effect transistor array by forming gate bus lines and drain bus lines in the form of a matrix on a light transmissive insulating film, forming thin film field effect transistors in the vicinity of each crossing p... | 02/05/1991 |
| 4959701 | Variable sensitivity floating gate photosensor An improved floating gate photosensor is operable in either an enhanced voltage sensitivity mode or an enhanced transit speed mode. This photosensor has a floating gate assembly that includes two overlapping, independent and complementary-shaped gate elec... | 09/25/1990 |
| 4885623 | Distributed channel-bipolar device A merged channel and bipolar device which exploits the distributed character of the device generates useful electronic characteristics by controlling the current and voltage inputs to the four or more terminals attached to the device, said electronic char... | 12/05/1989 |
| 4841349 | Semiconductor photodetector device with light responsive PN junction gate A semiconductor photodetector device comprises an insulating gate field effect transistor having a gate in which a PN junction (J) is formed on an insulating layer. The gate is formed of a gate electrode (14) of P+ -type single crystalline sili... | 06/20/1989 |
| 4823180 | Photo-transistor in MOS thin-film technology and method for production and operation thereof A photo-transistor in MOS thin-film technology operable with alternating voltages is comprised of a semiconductor body (3) composed of polycrystalline silicon having source (4) and drain (5) zones therein spaced apart by an undoped channel region (13) and... | 04/18/1989 |
| 4788581 | MOS dosimeter In known MOS dosimeters for measuring an energy dosage within radiation fields, which comprise a semiconductor substrate with an insulator layer and a metal contact or poly-si-contact, a measurement is taken and irreversible damage is done to the insulato... | 11/29/1988 |
| 4740829 | Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.... | 04/26/1988 |
| 4734750 | High electron mobility heterojunction semiconductor devices High electron mobility heterojunction semiconductor devices provided with a means to cause exposure of the electron source layer thereof to an electromagnetic wave allows modulation, adjustment and the like of the characteristics thereof even after comple... | 03/29/1988 |
| 4733286 | Semiconductor photoelectric converting device A semiconductor photoelectric converting device for use in a solid state image sensor includes an insulating substrate, an n- epitaxial layer formed on the substrate, n+ source and drain regions formed by diffusing n type impurities ... | 03/22/1988 |
| 4686555 | Solid state image sensor A solid state image sensor comprising static induction transistors each forming a picture element. Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions... | 08/11/1987 |
| 4677453 | Solid state image sensor In a solid state image sensor including a plurality of light receiving elements in a matrix manner, each light receiving element is composed of a static induction transistor having a MOS gate construction formed on a surface of a semiconductor substrate a... | 06/30/1987 |
