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| Number | Title | Issue Date |
| 7422919 | Avalanche photodiode An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor abso... | 09/09/2008 |
| 7417268 | Image sensor An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit be... | 08/26/2008 |
| 7408207 | Device manufacturing method and device, electro-optic device, and electronic equipment A device manufacturing method, including: a first process for providing the plural elements on the original substrate via a separation layer in a condition where terminal sections are exposed to a surface on an opposite side to the separation layer; a second process... | 08/05/2008 |
| 7382002 | Photo-detector and related instruments An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the app... | 06/03/2008 |
| 7352013 | Solid-state imaging device and manufacturing method thereof There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor s... | 04/01/2008 |
| 7351598 | Solid-stage image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a seco... | 04/01/2008 |
| 7348600 | Nitride semiconductor device, and its fabrication process The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the sam... | 03/25/2008 |
| 7312484 | Pixel having an oxide layer with step region A semiconductor structure, having a doped well region being formed in a substrate layer and a transistor having a terminal provided within said doped well region. The semiconductor structure also includes an oxide layer formed over the substrate layer, the doped wel... | 12/25/2007 |
| 7294519 | Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ... | 11/13/2007 |
| 7122398 | Manufacturing of optoelectronic devices A method for manufacturing optoelectronic devices is disclosed. A layered structure may be formed with a plurality of layers including a bottom electrode layer, a top electrode layer, and one or more active layers between the top and bottom electrode layers. The lay... | 10/17/2006 |
| 6700111 | Multi-wavelength semiconductor image sensor A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7 Cd0.3 Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77 | 03/02/2004 |
| 6649915 | Ionizing radiation detector A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming ... | 11/18/2003 |
| 6281039 | Hybrid device and a method of producing electrically active components by an assembly operation The invention relates to a method of assembling first and second electronic components (2, 4), the first of the components being fitted with conductive connection contacts (42), the method comprising a step of assembling the two components, the creation of at ... | 08/28/2001 |
| 6140145 | Integrated infrared detection system This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial l... | 10/31/2000 |
| 6114738 | Intrinsic p-type HgCdTe using CdTe capping layer A hybrid focal plane array has Hg1-x Cdx Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing ... | 09/05/2000 |
| 6103544 | Multiple color infrared detector A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared r... | 08/15/2000 |
| 6091127 | Integrated infrared detection system This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial l... | 07/18/2000 |
| 6030853 | Method of producing intrinsic p-type HgCdTe using CdTe capping layer A hybrid focal plane array has Hg1-x Cdx Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing ... | 02/29/2000 |
| 5989933 | Method of forming a cadmium telluride/silicon structure In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium ... | 11/23/1999 |
| 5880510 | Graded layer passivation of group II-VI infrared photodetectors A Group II-VI IR photodiode 10 has a passivation layer 16 overlying at least exposed surfaces of the p-n diode junction 15, the passivation layer being a compositionally graded layer comprised of Group II atoms diffused into a surface of the p-n diode jun... | 03/09/1999 |
| 5838053 | Method of forming a cadmium telluride/silicon structure In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium ... | 11/17/1998 |
| 5818051 | Multiple color infrared detector A multiple color infrared detector is provided which is formed from a photodiode (13), a photoconductor (24), and an insulating layer of material (20) disposed between the photodiode (13) and the photoconductor (24). The photodiode (13) detects infrared r... | 10/06/1998 |
| 5742089 | Growth of low dislocation density HGCDTE detector structures An epitaxial structure and method of manufacture for a infrared detector device with low dislocation density, especially for high performance large area focal plane arrays. Preferably, the epitaxial structure includes a buffer layer comprising a Hg-based ... | 04/21/1998 |
| 5646426 | Contact metal diffusion barrier for semiconductor devices A photoresponsive device (10) includes a body comprised of semiconductor material comprised of elements selected from Group IIB-VIA; and at least one electrically conductive contact pad (20) formed over a surface of the semiconductor material. The at leas... | 07/08/1997 |
| 5608208 | Single layer planar HgCdTe photovoltaic infrared detector with heterostructure passivation and p-on-n homojunction A method for producing a photodiode with a simplified planar device architecture based on a single layer of HgCdTe using a mature, established growth technology for the sensing material, combined with an implanted homojunction which is at least partially ... | 03/04/1997 |
| 5599733 | Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to supp... | 02/04/1997 |
| 5593902 | Method of making photodiodes for low dark current operation having geometric enhancement A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small junction region (35, 43) with the remainder of the p-type ... | 01/14/1997 |
| 5581084 | Simultaneous two color IR detector having common middle layer metallic contact An array of dual-band HgCdTe radiation detectors (10) wherein individual detectors include a first layer (14) having a first type of electrical conductivity and a bandgap selected for absorbing radiation within a first spectral band. The radiation detecto... | 12/03/1996 |
| 5535699 | Method of making II-VI semiconductor infrared light detector A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a conce... | 07/16/1996 |
| 5466953 | Denuded zone field effect photoconductive detector A compositionally graded HgCdTe radiation detector (10) is constructed to have a high purity "denuded zone" (Region 2) that is formed adjacent to a radiation absorbing region (Region 1). The compositional grading results in an internally generated electri... | 11/14/1995 |
| 5457331 | Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe A dual-band HgCdTe radiation detector (10) includes a four layer n-p+ -p-n+ structure, grown by LPE, upon a substrate (12). The four layers are, from a bottom layer next to the substrate to the surface: (a) a MWIR radiation responsiv... | 10/10/1995 |
| 5432374 | Integrated IR and mm-wave detector An integrated radiation detector (10) includes a substrate (12) having a first region (14) comprised of Group III-V semiconductor material, such as GaAs, formed over a first surface, and a second region (26) comprised of Group II-VI semiconductor material... | 07/11/1995 |
| 5416030 | Method of reducing leakage current in an integrated circuit A method is provided for reducing leakage current in an integrated circuit (24). A first doped region (18) having a first conductivity type is formed in a semiconductor layer (10) having a second conductivity type, such that a second doped region (20) hav... | 05/16/1995 |
| 5401986 | Bake-stable HgCdTe photodetector with II-VI passivation layer A photoresponsive device wherein the device includes semiconductor material, such as a cap region (14a), comprised of elements selected from Group IIB-VIA. A molybdenum contact pad (16) is formed upon a surface of the cap region, and a molybdenum ground c... | 03/28/1995 |
| 5327005 | Striped contact IR detector An IR detector array (10) wherein a metal contact pad (20) makes contact to an underlying radiation detector through one or more thin, electrically conductive stripes (20a). The striped pad contact shape is used in conjunction with a highly absorptive and... | 07/05/1994 |
| 5296384 | Bake-stable HgCdTe photodetector and method for fabricating same A photoresponsive device and a method of fabricating same, wherein the device includes semiconductor material, such as a cap region (14a), comprised of elements selected from Group IIB-VIA. A molybdenum contact pad (16) is formed upon a surface of the cap... | 03/22/1994 |
| 5241196 | Photoresponsive device including composition grading and recessed contacts for trapping minority carriers A mercury-cadmium-telluride (HgCdTe) photoresponsive layer (14) having the composition Hg1-x Cdx Te is formed on a substrate (12) such that x increases from the surface (14a) of the photoresponsive layer (14) toward the substrate (12... | 08/31/1993 |
| 5229321 | Method of diffusing mercury into a crystalline semiconductor material including mercury A method of diffusing mercury into a crystalline compound semiconductor film including mercury includes forming an amalgam on a region of the semiconductor film into which mercury is to be diffused, forminq a protective film on the amalgam, and annealing,... | 07/20/1993 |
| 5215631 | Electrolytic preparation of tin, other metals, alloys and compounds Electrolytic processes for the growth of crystalline tin or other elemental crystals, with or without the use of a substrate. Exemplified cubic forms of alpha-tin and tetragonal forms of beta-tin are grown using a shaped anode and a pointed cathode to pro... | 06/01/1993 |
| 5187378 | Photodetector A photodetector includes a compound semiconductor substrate including first and second elements and having a first energy band gap, a first conductivity type compound semiconductor light absorbing layer including at least one of the first and second eleme... | 02/16/1993 |
