Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| RE39780 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 08/21/2007 |
| 6677214 | Semiconductor device and method of fabricating the same In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is ... | 01/13/2004 |
| 6664566 | Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 12/16/2003 |
| 6503771 | Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 01/07/2003 |
| 6225668 | Semiconductor device having a single crystal gate electrode and insulation In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is ... | 05/01/2001 |
| 6177706 | Field-effect thin-film transistor device In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is ... | 01/23/2001 |
| 6137120 | Semiconductor device and method of fabricating the same In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is ... | 10/24/2000 |
| 6106734 | Micromachine manufacture using gas beam crystallization In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is ... | 08/22/2000 |
| 6028264 | Semiconductor having low concentration of carbon Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4×1018 atoms/cm3.... | 02/22/2000 |
| 5741615 | Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer being composed of a non-Si (H,X) material containing silicon atoms (Si) as a matrix and at least one kind of atoms selected ... | 04/21/1998 |
| 5738731 | Photovoltaic device A solar cell comprising: a first junction part having a first conductivity type first semiconductor film and a second conductivity type second semiconductor film formed on an upper surface of said first semiconductor film; and a second junction part having a f... | 04/14/1998 |
| 5591987 | Semiconductor MIS field effect transistor with semi-amorphous semiconductor material A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a ... | 01/07/1997 |
| 5562781 | Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of semiconductor films sandwiched together in layers, every ... | 10/08/1996 |
| 5556794 | Method of manufacturing a semiconductor device having low sodium concentration A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic silicon which contains hydrogen or halogen and is formed on a substrate by a vapor phase reaction in a reaction chamber which may h... | 09/17/1996 |
| 5536933 | Light information device and method for producing the same The light information device of the invention includes a semiconductor having a photoconductive effect or a photovoltaic effect. In the light information device, a photoconductivity and a dark conductivity of the semiconductor are varied by an aging proce... | 07/16/1996 |
| 5521400 | Semiconductor photoelectrically sensitive device with low sodium concentration A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 05/28/1996 |
| 5516611 | Light-receiving member and methods of producing light-receiving member In order to improve characteristics of a light-receiving member for electrophotography having a photoconductive layer comprising an amorphous silicon material and implement a method for facilitating designing of a layer structure, the present invention pr... | 05/14/1996 |
| 5468653 | Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semic... | 11/21/1995 |
| 5414275 | Photoelectric converting device and image processing apparatus utilizing the same A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous... | 05/09/1995 |
| 5283207 | Photoconductive material and photosensor employing the photoconductive material A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an... | 02/01/1994 |
| 5278015 | Amorphous silicon film, its production and photo semiconductor device utilizing such a film An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atom... | 01/11/1994 |
| 5258207 | Amorphous silicon film, its production and photo semiconductor device utilizing such a film An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atom... | 11/02/1993 |
| 5243216 | Phototransistor A phototransistor includes a monocrystalline semiconductor substrate of a first conductivity type, a crystalline semiconductor layer of a second conductivity type formed from a surface of the semiconductor substrate to a predetermined depth, a substantial... | 09/07/1993 |
| 5206534 | Photocell In the case of a photocell based on gallium arsenide or indium phosphide, a layer of amorphous, hydrogenous carbon (a-C:H) having a thickness of ࣘ0.1 μm and a specific electrical resistance of ࣙ106 Ω.cm is placed on a layer of p-doped gal... | 04/27/1993 |
| 5155567 | Amorphous photoconductive material and photosensor employing the photoconductive material A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an... | 10/13/1992 |
| 5152833 | Amorphous silicon film, its production and photo semiconductor device utilizing such a film An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atom... | 10/06/1992 |
| 5114498 | Photovoltaic device A photovoltaic device includes a substrate (1, 10) having a conductive electrode (2, 10), and a first semiconductor layer (31, 111) of a first conductivity type, a substantially intrinsic second semiconductor layer (32, 11... | 05/19/1992 |
| 5115123 | Contact type photoelectric transducer A photosensor comprises a first electrode layer, a light-transmitting second electrode layer, and a laminate structure disposed between the two electrode layers and comprising a first photoconductive layer, a blocking layer and a second photoconductive la... | 05/19/1992 |
| 5091334 | Semiconductor device A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a ... | 02/25/1992 |
| 5051803 | Diode and producing method thereof and contact image sensor device comprising the same A pin diode having an incident layer which includes 1 to 10% of microcrystallized silicon is formed in a condition where a molar ratio of hydrogen to monosilane is 5:1 to 100:1 and applied power is 0.001 to 0.05 W/cm2. The pin diode as well as ... | 09/24/1991 |
| 5043772 | Semiconductor photo-electrically-sensitive device A semiconductor photo-electrically-sensitive device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the ... | 08/27/1991 |
| 5008206 | Method for making a photoelectric conversion device using an amorphous nucleation site A photoelectric conversion apparatus comprising a transistor having a main electrode area of one conductive type semiconductor and a control electrode area of an opposite conductive type semiconductor, and a capacitor for controlling the potential of the ... | 04/16/1991 |
| 4982095 | Multi-element type radiation detector This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode co... | 01/01/1991 |
| 4969025 | Amorphous silicon photosensor with oxygen doped layer A sandwich type amorphous silicon photosensor suitable for use as an image sensor of a facsimile machine or the like is provided. The photosensor includes a pair of first and second electrodes and an amorphous silicon multi-layer structure sandwiched betw... | 11/06/1990 |
| 4954182 | Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps The production of improved multiple cell photovoltaic amorphous silicon devices having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the silicon alloy material in one or more cells of t... | 09/04/1990 |
| 4941032 | Semiconductor device A semiconductor device comprising an amorphous semiconductor which might contain microcrystal therein, and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component; wherein at least one element selecte... | 07/10/1990 |
| 4926230 | Multiple junction solar power generation cells A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is for... | 05/15/1990 |
| 4903102 | Semiconductor photoelectric conversion device and method of making the same A semiconductor photoelectric conversion device is provided with a PIN structure which comprises P-type, I-type and N-type non-single-crystal semiconductor layers laminated in that order or in the reverse order. The I-type layer contains a recombination c... | 02/20/1990 |
| 4891074 | Multiple cell photoresponsive amorphous alloys and devices The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements ... | 01/02/1990 |
| 4866006 | Process for producing hydrogenated amorphous silicon film A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a photosensitivity of not less than 0.1 erg/cm2 at 78... | 09/12/1989 |
