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| Number | Title | Issue Date |
| 7405420 | Method and system for chalcogenide-based nanowire memory Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locat... | 07/29/2008 |
| 7399655 | Damascene conductive line for contacting an underlying memory element A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change mem... | 07/15/2008 |
| 7393798 | Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device. ... | 07/01/2008 |
| 7394088 | Thermally contained/insulated phase change memory device and method (combined) A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the di... | 07/01/2008 |
| 7391050 | Phase change memory device with thermal insulating layers A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity or material layers having low... | 06/24/2008 |
| 7385219 | Optimized solid electrolyte for programmable metallization cell devices and structures A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electro... | 06/10/2008 |
| 7365354 | Programmable resistance memory element and method for making same A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making t... | 04/29/2008 |
| 7365411 | Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device. ... | 04/29/2008 |
| 7361929 | Field-effect transistors with weakly coupled layered inorganic semiconductors A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source ... | 04/22/2008 |
| 7361925 | Integrated circuit having a memory including a low-k dielectric material for thermal isolation The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrod... | 04/22/2008 |
| 7354793 | Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method. ... | 04/08/2008 |
| 7348590 | Phase change memory cell with high read margin at low power operation A memory cell device includes a first electrode, a heater adjacent the first electrode, phase-change material adjacent the heater, a second electrode adjacent the phase-change material, and isolation material adjacent the phase-change material for thermally isolatin... | 03/25/2008 |
| 7348209 | Resistance variable memory device and method of fabrication Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least on... | 03/25/2008 |
| 7338851 | Diode/superionic conductor/polymer memory structure A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal... | 03/04/2008 |
| 7338857 | Increasing adherence of dielectrics to phase change materials A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material. ... | 03/04/2008 |
| 7329579 | Phase changeable memory cells and methods of fabricating the same A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area... | 02/12/2008 |
| 7323356 | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the st... | 01/29/2008 |
| 7323734 | Phase changeable memory cells A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area... | 01/29/2008 |
| 7314776 | Method to manufacture a phase change memory Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method ma... | 01/01/2008 |
| 7307908 | Software refreshed memory device and method A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relati... | 12/11/2007 |
| 7303939 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 12/04/2007 |
| 7282783 | Resistance variable memory device and method of fabrication Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least on... | 10/16/2007 |
| 7282387 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 10/16/2007 |
| 7259023 | Forming phase change memory arrays A phase change memory may be formed to have a dimension that is sub-lithographic in one embodiment by forming a surface feature over the phase change material, and coating the surface feature with a mask of sub-lithographic dimensions. The horizontal portions of the... | 08/21/2007 |
| 7232703 | Non-volatile memory and the fabrication method A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected t... | 06/19/2007 |
| 7227171 | Small area contact region, high efficiency phase change memory cell and fabrication method thereof A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction tr... | 06/05/2007 |
| 7214958 | Phase change memory cell with high read margin at low power operation A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier ... | 05/08/2007 |
| 7202493 | Chalcogenide memory having a small active region A chalcogenide phase change memory cell has a substrate with a conductor line. The conductor line has a contact end. An insulating layer is located over the substrate and conductor line. An aperture is located in the insulating layer. The aperture extends to the sub... | 04/10/2007 |
| 7190048 | Resistance variable memory device and method of fabrication Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least on... | 03/13/2007 |
| 7186999 | Error reduction circuit for chalcogenide devices An error reduction circuit for use in arrays of chalcogenide memory and computing devices. The error reduction circuit reduces the error associated with the output response of chalcogenide devices. In a preferred embodiment, the output response is resistance and the... | 03/06/2007 |
| 7135727 | I-shaped and L-shaped contact structures and their fabrication methods Contact structures having I shapes and L shapes, and methods of fabricating I-shaped and L-shaped contact structures, are employed in semiconductor devices and, in certain instances, phase-change nonvolatile memory devices. The I-shaped and L-shaped contact structur... | 11/14/2006 |
| 7129560 | Thermal memory cell and memory device including the thermal memory cell A memory cell includes a storage medium having a programmable thermal impedance, and a heater in thermal communication with the storage medium for programming the thermal impedance. In another aspect, a memory cell includes a storage medium having a programmable ele... | 10/31/2006 |
| 7126152 | Storage device A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first ... | 10/24/2006 |
| 7112836 | Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be drive... | 09/26/2006 |
| 7109056 | Electro-and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 09/19/2006 |
| 6106609 | Formation of nanocrystalline semiconductor particles within a bicontinuous cubic phase Nanocrystalline semiconductors are synthesized within a bicontinuous cubic atrix 10. The nanocrystalline particles 12 may then be end-capped 18 with a dispersant to prevent agglomeration. One typical nanocrystalline semiconductor compound made according to... | 08/22/2000 |
| 5561295 | Infrared-responsive photoconductive array and method of making A photoconductive detector array which is responsive to infrared light to provide an electrical output response includes a substrate which is transparent to infrared light. A continuous layer of photoconductive material is disposed upon the substrate, and... | 10/01/1996 |
| 5345093 | Graded bandgap semiconductor device for real-time imaging Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radia... | 09/06/1994 |
| 5275839 | Method of sensitizing lead salt detectors A method for sensitizing lead salt infrared detectors includes the step of making a photomask for depositing a lead salt material on a substrate for forming a plurality of detectors in which each detector is electrically coupled in series to at least one ... | 01/04/1994 |
| 5242505 | Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be f... | 09/07/1993 |
