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Vehicular Impact Signaling Device
An apparatus for the deployment of a visible plume to alert other motorists that a proximate motor vehicle has been involved in a collision.
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| Number | Title | Issue Date |
| 5581087 | Radiation detector A radiation detector includes a photodiode composed of an -SiC substrate of a first conductivity type, a first -SiC layer of the first conductivity type epitaxially formed on the -SiC substrate, a second -SiC layer of a second ... | 12/03/1996 |
| 5319220 | Silicon carbide semiconductor device A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a ଲ-type silicon carbide layer h... | 06/07/1994 |
| 5289017 | Solid state imaging device having silicon carbide crystal layer A solid state imaging device of claim 1, wherein the silicon carbide crystal layer is formed on a silicon substrate such that the insulating film is interposed between said silicon carbide crystal layer and said silicon substrate. Since the charge transfe... | 02/22/1994 |
| 5093576 | High sensitivity ultraviolet radiation detector A high sensitivity radiation detecting photodiode formed in silicon carbide comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of silicon carbide upon the substrate and having a first conductivity type; a second monocry... | 03/03/1992 |
| 4985742 | High temperature semiconductor devices having at least one gallium nitride layer A device having high temperature operating characteristics is provided by depositing n-type cubic gallium nitride on n-type cubic silicon carbide to provide an ohmic contact or electrode. High temperature operating characteristics are also provided in a d... | 01/15/1991 |
| 4939561 | Infrared sensor An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si1-X GeX epitaxial layer grown on a p-type substrate, wherein the chara... | 07/03/1990 |
| 4885614 | Semiconductor device with crystalline silicon-germanium-carbon alloy The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two... | 12/05/1989 |
| 4831428 | Infrared ray detection device An infrared ray detection device comprises a Si crystal substrate, a Gex Si1-x (0 | 05/16/1989 |
| 4524237 | Increased voltage photovoltaic cell A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second... | 06/18/1985 |
